BYR29X-600 PHILIPS | Alldatasheet
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Technical content
Rectifier diode ultrafast Rev. 01 — 26 September 2003 Product data M3D295 1. Product profile
1.1 Description
Ultra-fast, epitaxial rectifier diode in a plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data
- Pinning information ■ Low forward voltage ■ Fast switching ■ Soft recovery characteristic ■ Isolated mounting base. ■ Switched-mode power supplies ■ Low loss rectification. ■ VR ≤ 600 V ■ VF ≤ 1.5 V ■ IF(AV)≤ 8A ■ trr≤ 75 ns Table 1: Pinning - SOD113, simplified outline and symbol Pin Description Simplified outline Symbol 1 cathode (k) SOD113 2 anode (a) mb mounting base; isolated Top view MBK088 mb ka 001aaa020
Philips Semiconductors BYR29X-600 Rectifier diode ultrafast Product data Rev. 01 — 26 September 2003 2 of 10 9397 750 12006 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 3. Ordering information 4. Limiting values [1] Neglecting switching and reverse current losses. Table 2: Ordering information Type number Package Name Description Version BYR29X-600 - Plastic single-ended package; isolated heatsink mounted; 2-leads SOD113 Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage T h ≤ 136 °C - 600 V IF(AV) average forward current square wave; δ = 0.5; Th ≤ 73 °C [1] -8 A IFRM repetitive peak forward current square wave; t = 25µs;δ = 0.5; Th ≤ 73 °C - 16 A IFSM non-repetitive peak forward current sinusoidal; with reapplied VRRM(max) tp =1 0m s - 6 0 A tp = 8.3 ms - 66 A Tstg storage temperature −40 +150 °C Tj junction temperature - +150 °C
Philips Semiconductors BYR29X-600 Rectifier diode ultrafast Product data Rev. 01 — 26 September 2003 3 of 10 9397 750 12006 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Square current waveform Sinusoidal current waveform Fig 1. Maximum forward power dissipation (square current waveform) and maximum permissible heatsink temperature as a function of average forward current. Fig 2. Maximum forward power dissipation (sinusoidal current waveform) and maximum permissible heatsink temperature as a function of average forward current. Fig 3. Maximum permissible forward RMS current as a function of pulse width. 0 4 81 2 IF(AV) (A) PF Th(max) 150 122.5 67.5 R s = 0.03 Ω Vo = 1.26 V (W) tp tp T P t Tδ = δ = 1 δ = 0.5 δ = 0.2 δ = 0.1 (°C) 003aaa467 0 24 68 IF(AV) (A) PF Th(max) 150 67.5 122.5 Vo = 1.26 V R s = 0.03 Ω (W) a = 4 a = 2.8 a = 1.9 a = 1.57 (°C) IFA V() IFR M S() δ×= a IFR M S() IFA V() tp (s) IF(RMS) (A) 10-110-210-310-410-5 003aaa469
Philips Semiconductors BYR29X-600 Rectifier diode ultrafast Product data Rev. 01 — 26 September 2003 4 of 10 9397 750 12006 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 5. Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-h) thermal resistance from junction to heatsink with heatsink compound;Figure 4 - - 5.5 K/W without heatsink compound - - 7.2 K/W R th(j-a) thermal resistance from junction to ambient in free air - 55 - K/W Fig 4. Transient thermal impedance from junction to heatsink as a function of pulse duration. 10-6 10-5 10-4 10-3 10-2 10-1 11 0 tp (s) 10-1 10-2 Zth(j-h) (K/W) 003aaa474 tp P t
Philips Semiconductors BYR29X-600 Rectifier diode ultrafast Product data Rev. 01 — 26 September 2003 5 of 10 9397 750 12006 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 6. Characteristics Table 5: Characteristics Tj=2 5°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V F forward voltage I F =8A Tj= 150°C; Figure 5 - 1.07 1.5 V Tj=2 5°C; Figure 5 - - 1.7 V IF = 20 A - 1.75 1.95 V IR reverse current V R =V RRM Tj= 100°C - 0.1 0.2 mA Tj=2 5°C- 1 1 0 µA Dynamic characteristics Q r recovered charge I F = 2 A; VR ≥ 30 V; dIF/dt = 20 A/µs;Figure 8 - 150 200 nC trr reverse recovery time I F = 1 A; VR ≥ 30 V; dIF/dt = 100 A/µs;Figure 6 - 6 07 5n s Irrm peak reverse recovery current IF = 10 A; VR ≥ 30 V; dIF/ d t=5 0A /µs; Tj= 100°C; Figure 7 --6 A Vfr forward recovery voltage IF = 10 A; dIF/ d t=1 0A /µs- 5 - V Fig 5. Forward current as a function of forward voltage; typical values. Fig 6. Maximum reverse recovery time as a function of rate of change of forward current. 0 1 2 3 VF (V) IF max typ Tj = 25 °C Tj = 150 °C (A) 003aaa472 trr 1 10 102 dIF/dt (A/ms) 1 A IF = 10 A Tj = 25 °C Tj = 100 °C 102 103 (ns) 003aaa470
Philips Semiconductors BYR29X-600 Rectifier diode ultrafast Product data Rev. 01 — 26 September 2003 6 of 10 9397 750 12006 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 7. Isolation characteristics Fig 7. Maximum reverse current as a function of rate of change of forward current. Fig 8. Maximum recovered charge as a function of rate of change of forward current. 10-1 10-2 Irrm 1 10 102 -dIF/dt (A/µs) IF =1 A IF = 10 A Tj = 25 °C Tj = 100 °C (A) 003aaa471 10 -dIF/dt (A/µs) Q r 2 A IF = 10 A 102 103 (nC) 10210-1 003aaa473 Table 6: Isolation characteristics Symbol Parameter Conditions Min. Typ. Max. Unit V(isol)MR Repetitive peak isolation voltage from both terminals to external heatsink. RH ≤ 65%; clean and dust-free. - - 1500 V C (k-h) Capacitance from cathode to external heatsink. - 12 - pF
Philips Semiconductors BYR29X-600 Rectifier diode ultrafast Product data Rev. 01 — 26 September 2003 7 of 10 9397 750 12006 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 8. Package outline Fig 9. SOD113. REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOD113 2-lead TO-220F 0 10 20 mm scale Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 'full pack' SOD113 w M b E P e A b1 c Q k j q D T H E L (1) m z Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. UNIT A 1 Db E e wTqQPmLjk z (2)b1 c L1 (1)H E max. DIMENSIONS (mm are the original dimensions) A mm 0.80.44.6 4.0 2.9 2.5 1.1 0.9 0.9 0.7 0.7 0.4 15.8 15.2 10.3 9.7 5.08 19.0 14.4 13.5 3.3 2.8 6.5 6.3 2.6 2.3 2.6 2.552.7 1.7 0.6 0.4 3.2 3.0 99-09-13 02-04-09
Philips Semiconductors BYR29X-600 Rectifier diode ultrafast Product data Rev. 01 — 26 September 2003 8 of 10 9397 750 12006 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9. Revision history Table 7: Revision history Rev Date CPCN Description 01 20030926 - Product data (9397 750 12006).
Philips Semiconductors BYR29X-600 Rectifier diode ultrafast © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 26 September 2003 9 of 10 9397 750 12006 Philips Semiconductors BYR29X-600 Rectifier diode ultrafast © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 26 September 2003 9 of 10 Contact information For additional information, please visithttp://www.semiconductors.philips.com. 10. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 September 2003 Document order number: 9397 750 12006
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Philips Semiconductors BYR29X-600 Rectifier diode ultrafast