BYP60A05_07 DIOTEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Silicon-Press-Fit-Diodes – High Temperature Diodes Silizium-Einpress-Dioden – Hochtemperatur-Dioden Version 2006-04-22 Dimensions - Maße [mm] Nominal Current Nennstrom 60 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50 ... 600 V Metal press-fit case with plastic cover Metall-Einpressgehäuse mit Plastik-Abdeckung Weight approx. Gewicht ca. 10 g Compound has classification UL94V-0 Vergussmasse nach UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Grenzwerte Type / Typ Wire to / Draht an Anode Cathode Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] BYP60A05 BYP60K05 50 60 BYP60A1 BYP60K1 100 120 BYP60A2 BYP60K2 200 240 BYP60A3 BYP60K3 300 360 BYP60A4 BYP60K4 400 480 BYP60A6 BYP60K6 600 700 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last T C = 150°C I FAV 60 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz I FRM 190 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C I FSM 450/500 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i 2t 1000 A 2s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+215°C -50...+215°C 1 Max. case temperature T C = 150°C – Max. Gehäusetemperatur TC = 150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 28.5 min Ø 12.75 Rändel 0.8 knurl 0.8 Ø ±0.1 1.3 10.7 ±0.2 ±0.2 Ø ±01
Forward Voltage – Durchlass-Spannung T j = 25°C I F = 60 A V F < 1.1 V Leakage Current – Sperrstrom T j = 25°C V R = VRRM IR < 100 µA Thermal Resistance Junction – Case Wärmewiderstand Sperrschicht – Gehäuse RthC < 0.6 K/W © Diotec Semiconductor AG http://www.diotec.com/ 2 120 100 [%] I FAV Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehäusetemp. [°C]TC 150100500 200 Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz [A] îF 1 10 10 [n] 10 2 3 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) [A] IF T = 25°Cj T = 125°Cj 450a-(60a-1,1v)