BYI-1 ADPOW | Alldatasheet
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4 ° BYL-I/JIF/AIT/I1Z q f= TECHNOLOGY RF BYISTORS FOR LINEAR POWER AMPLIFIERS SS GENERAL DESCRIPTION CASE OUTLINE The BYI-1/IF/IT/IZ is a semiconductor device specifically designed for use in linear amplifier bias circuitry. The byistor acts as a low impedance D.C. bias source which has two modes for thermal compensation. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25°C 11 Watts Maximum Voltage and Current BVces Collector to Emiter Voltage 55 Volts BVebo Emitter to Base Voltage 4.0 Volts Ie Collector Current O7A Maximum Temperatures Storage Temperature = 65 to +150°C Operating Junction Temperature +150°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL | CHARACTERISTICS TEST CONDITIONS | MIN UNITS Pout Power Output F = 400 MHz 3 Watts Pin Power Input Vee = 28 Volts 0.2 Watts Pg Power Gain 11.8 13 dB ne Efficiency 60 % VSWR Load Mismatch Tolerance 30:1 BVebo Emitter to Base Breakdown le = SmA 4.0 Volts BVces Collector to Emitter Ie = 20mA 55 Volts BVceo Breakdown le = SOmA 30 Volts BVcbo Collector to Emitter Ic =__mA Volts Iebo Breakdown Ve = __ Volts mA Cob Collector to Base Breakdown Veb = 28 V,F=1 4.5 pF Neg Collector to Base Current MHz 10 45 150 je Output Capacitance Vee =5V,Ie= 100A 16 °C/W DC - Current Gain Thermal Resistance Initial Issue June, 1994 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct.