BYG10D TAYCHIPST | Alldatasheet
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Technical content
200V-1000V 1.5A Web Site: www.taychipst.com1 of 2
FEATURES
E-mail: sales@taychipst.com MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS /C0068Controlled avalanche characteristics /C0068Glass passivated junction /C0068Low reverse current /C0068High surge current capability /C0068Wave and reflow solderable Silicon Mesa SMD Rectifier Absolute Maximum Ratings Parameter Test Conditions Type Symbol Value Unit Reverse voltage BYG10D V R RRM 200 V g =Repetitive peak reverse voltage BYG10G V R RRM 400 V BYG10J V R RRM 600 V BYG10K V R RRM 800 V BYG10M V R RRM 1000 V Peak forward surge current t p =10ms, half sinewave I FSM A Average forward current I FAV 1.5 A Junction and storage temperature range T j stg –55...+150 /C0176C Pulse energy in avalanche mode, non repetitive (inductive load switch off) I (BR)R =1A, T j =25/C0176C E R mJ Maximum Thermal Resistance Parameter Test Conditions Symbol Value Unit Junction lead T L =const. R thJL K/W Junction ambient mounted on epoxy–glass hard tissue R thJA 150 K/W mounted on epoxy–glass hard tissue, 50mm 35/C0109m Cu R thJA 125 K/W mounted on Al–oxid–ceramic (Al O ), 50mm 35/C0109m Cu R thJA 100 K/W
Electrical Characteristics
I F =1A V F 1.1 V g I F =1.5A V F 1.15 V Reverse current V R RRM I R /C0109A V R RRM , T j =100/C0176C I R /C0109A Reverse recovery time I F =0.5A, I R =1A, i R =0.25A t rr /C0109s