BYD31DZ DSK | Alldatasheet
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Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%. BYD 31K BYD 31M UNITS Maximum recurrent peak reverse voltage V RRM 800 1000 V Max imum RMS v oltage V RMS 560 700 V Maximum DC blocking voltage V DC 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 0.5 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 3. Thermal resistance f rom junction to ambient. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 400 280 BYD31D(Z)---BYD31M(Z) VOLTAGE RANGE: 200 --- 1000 V CURRENT: 0.5 A Easily cleaned with Freon Alcohol,Isopropanol and similar solvents FAST RECOVERY RECTIFIERS DO - 41 200 BYD 31G BYD 31J 600 140 BYD 31D 600 200200 420 I FSM I R 1.35 100.0 15.0 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 250 I F(AV) -55 ---- + 150 A A 5.0 A 0.5 - 55 ---- + 150 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
0.6 T J =25 Pulse Width=300 µ S 0.4 0.04 0.01 0.02 0.06 0.1 0.2 1.0 100 1 100 T J =125 8.3ms Single Half Sine-Wave Single Phase Half Wave 60H Z Resistive or Inductive Load 0.1 0.2 0.3 0.4 0.5 0.6 0 20 40 60 80 100 120 140 160 180 200 PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) -1.0A -0.25A +0.5A t rr 1cm AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT BYD31D(Z)---BYD31M(Z) SET TIME BASE FOR 50/100 ns /cm AMBIENT T EMPERAT URE, NUMBER OF CYCLES AT 60 Hz N OTE S:1.R ISE TIM E =7ns M AX. IN P U T IM P E D AN C E =1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM FIG.2 --FORWARD DERATING CURVE INST ANT ANEOUS FORWARD VOLT AGE,VOLT S REVERSE VOLT AGE,VOLT S FIG.4--TYPICAL FORWARD CHARACTERISTIC FIG.5-- TYPICAL JUNCTION CAPACITANCE 2.R ISE TIM E =10ns M AX. SOU R C E IM P E D AN C E =5O AVERAGE FORWARD CURRENT FIG.3 --PEAK FORWARD SURGE CURRENT T J =25 f=1MHz .4 1.0 2 4 10 20 40 100 www.diode.kr Diode Semiconductor Korea