BYD13D TAYCHIPST | Alldatasheet

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Technical content

200V-1000V 0.750A-1.4A BYD13D THRU BYD13M Web Site: www.taychipst.com

FEATURES

E-mail: sales@taychipst.com MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Controlled avalanche rectifiers

  • Glass passivated
  • High maximum operatingtemperature
  • Low leakage current
  • Excellent stability
  • Guaranteed avalanche energyabsorption capability
  • Available in ammo-pack. Cavity free cylindrical glass package through Implotec (1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

ELECTRICAL CHARACTERISTICS

T j =2 5°C; unless otherwise specified. I F(AV) average forward current T tp =5 5°C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 − 1.40 A T amb =6 5°C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − 0.75 A I FSM non-repetitive peak forward current t = 10 ms half sinewave; T j j max prior to surge; V R RRMmax − 20 A E RSM non-repetitive peak reverse avalanche energy L = 120 mH; T j j max prior to surge; inductive load switched off − 7 mJ T stg storage temperature −65 +175 °C T j junction temperature see Fig.5 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F forward voltage I F =1A ; T j j max; see Fig.6 −− 0.93 V I F = 1 A; see Fig.6 −− 1.05 V V (BR)R reverse avalanche breakdown voltage I R = 0.1 mA BYD13D 225 −− V BYD13G 450 −− V BYD13J 650 −− V BYD13K 900 −− V BYD13M 1100 −− V I R reverse current V R RRMmax ; see Fig.7 −− 1 µA V R RRMmax ; T j = 165°C; see Fig.7 −− 100 µA t rr reverse recovery time when switched from I F = 0.5 A to I R =1A ; measured at I R = 0.25 A; see Fig.10 − 3 − µs C d diode capacitance V R = 0 V; f = 1 MHz; see Fig.8 − 21 − pF SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

RATINGS AND CHARACTERISTIC CURVES BYD13D THRU BYD13M E-mail: sales@taychipst.com Web Site: www.taychipst.com 200V-1000V 0.750A-1.4A BYD13D THRU BYD13M Controlled avalanche rectifiers Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). a = 1.57; V R RRMmax ;δ = 0.5. Lead length 10 mm. handbook, halfpage 0 200 2.0 0.4 0.8 1.2 1.6 40 80 120 160 IF(AV) (A) Ttp ( o Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). a = 1.57; V R RRMmax ;δ = 0.5. Device mounted as shown in Fig.9. handbook, halfpage 0 200 1.0 0.2 0.4 0.6 0.8 40 80 120 160 IF(AV) (A) Tamb ( o Fig.4 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. a=I F(RMS) F(AV) ; V R RRMmax ;δ = 0.5. handbook, halfpage 0 0.4 0.8 1.6 2.5 2.0 1.2 1.5 1.0 0.5 2.5 2 P (W) IF(AV) (A) 1.42 a = 3 1.57 Solid line = V R Dotted line = V RRM ;δ = 0.5. Fig.5 Maximum permissible junction temperature as a function of reverse voltage. handbook, halfpage DGJ KM 400 800 1200 200 100 150 Tj VR ,VRRM (V) ( C) o

3 of 3E-mail: sales@taychipst.com Web Site: www.taychipst.com 200V-1000V 0.750A-1.4A BYD13D THRU BYD13M Controlled avalanche rectifiers Solid line: T j =2 5°C. Dotted line: T j = 175°C. Fig.6 Forward current as a function of forward voltage; maximum values. handbook, halfpage IF (A) VF (V) Fig.7 Reverse current as a function of junction temperature; maximum values. handbook, halfpage 2000 16012040 80 (µA) IR Tj ( o V R RRMmax Fig.8 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; T j =2 5°C. handbook, halfpage 1 10 10 (pF) C d VR (V)