BYC10B-600

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Product specification August 2018 /g3DISCRETE SEMICONDUCTORS/g3 BYC10B-600 Rectifier diode ultrafast, low switching loss

WeEn Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss FEATURES SYMBOL QUICK REFERENCE DATA

• Extremely fast switching VR = 600 V
• Low reverse recovery current
• Low thermal resistance VF ≤ 1.8 V
• Reduces switching losses in associated MOSFET IF(AV) = 10 A trr = 19 ns (typ) APPLICATIONS PINNING SOT404
• Active power factor correction PIN DESCRIPTION
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched 1 no connection mode power supplies. 2 cathode 1 The BYC10B-600 is supplied in the SOT404 surface mounting 3 anode package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM Peak repetitive reverse voltage - 600 V VRWM Crest working reverse voltage - 600 V VR Continuous reverse voltage T mb ≤ 114 ˚C - 500 V IF(AV) Average forward current δ = 0.5; with reapplied VRRM(max); - 10 A Tmb ≤ 78 ˚C IFRM Repetitive peak forward current δ = 0.5; with reapplied VRRM(max); - 20 A Tmb ≤ 78 ˚C IFSM Non-repetitive peak forward t = 10 ms - 65 A current. t = 8.3 ms - 71 A sinusoidal; Tj = 150˚C prior to surge with reapplied VRWM(max) Tstg Storage temperature -40 150 ˚C Tj Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to - - 2 K/W mounting base Rth j-a Thermal resistance junction to minimum footprint, FR4 board - 50 - K/W ambient 1 it is not possible to make connection to pin 2 of the SOT404 package August 2018 1 Rev 1.500 mb 1 3 D2PAK (SOT404) A 001aaa020 K

WeEn Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF Forward voltage IF = 10 A; Tj = 150˚C - 1.4 1.8 V IF = 20 A; Tj = 150˚C - 1.7 2.3 V IF = 10 A; - 2.0 2.9 V IR Reverse current VR = 600 V - 9 200 μA VR = 500 V; Tj = 100 ˚C - 1.1 3.0 mA trr Reverse recovery time I F = 1 A; VR = 30 V; dIF/dt = 50 A/μs - 35 55 ns trr Reverse recovery time I F = 10 A; VR = 400 V; - 19 - ns dIF/dt = 500 A/μs trr Reverse recovery time I F = 10 A; VR = 400 V; - 32 40 ns dIF/dt = 500 A/μs; Tj = 100˚C Irrm Peak reverse recovery current I F = 10 A; VR = 400 V; - 3 7.5 A dIF/dt = 100 A/μs; Tj = 125˚C Irrm Peak reverse recovery current I F = 10 A; VR = 400 V; - 9.5 12 A dIF/dt = 500 A/μs; Tj = 125˚C Vfr Forward recovery voltage I F = 10 A; dIF/dt = 100 A/μs- 8 1 1 V Fig.1. Typical application, output rectifier in boost converter power factor correction circuit. Continuous conduction, mode where the transistor turns on whilst forward current is still flowing in the diode. Fig.2. Typical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still flowing in the other bridge leg diode. Vin Vo = 400 V d.c.

500 V MOSFET

Vin Vin = 400 V d.c. inductive load IFIR IL August 2018 2 Rev 1.500

WeEn Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss Fig.3. Maximum forward dissipation as a function of average forward current; rectangular current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Typical reverse recovery switching losses in diode, as a function of rate of change of current dIF/dt. Fig.5. Typical switching losses in transistor due to reverse recovery of diode, as a function of of change of current dIF/dt. Fig.6. Origin of switching losses in transistor due to diode reverse recovery. Fig.7. Typical reverse recovery time trr, as a function of rate of change of current dIF/dt. Fig.8. Typical peak reverse recovery current, Irrm as a function of rate of change of current dIF/dt. 0 5 10 15 0.5 0.2 0.1 BYC10-600 Rs = 0.05 Ohms Vo = 1.3 V D = 1.0 150 Average forward current, IF(AV) (A) Forward dissipation, PF (W) Tmb(max) C 140 130 120 110 100 D = tp tp T T t I time ID Irrm VD dIF/dt ID = IL losses due to diode reverse recovery 100 1000 0.05 0.1 0.15 0.2 0.25 Rate of change of current, dIF/dt (A/us) f = 20 kHz Diode reverse recovery switching losses, Pdsw (W) IF = 5 A 20 A 10 A Tj = 125 C VR = 400 V 100 1000

100 BYC10-600

Rate of change of current, dIF/dt (A/us) Reverse recovery time, trr (ns) Tj = 125 C VR = 400 V IF = 5 A 20 A 10 A 100 1000 BYC10-600 Rate of change of current, dIF/dt (A/us) Transistor losses due to diode reverse recovery, Ptsw (W) IF = 5 A 10 A 20 A f = 20 kHz Tj = 125 C VR = 400 V 100 1000 Rate of change of current, dIF/dt (A/us) Peak reverse recovery current, Irrm (A) Tj = 125 C VR = 400 V IF = 5 A 20 A August 2018 3 Rev 1.500

WeEn Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss Fig.9. Definition of reverse recovery parameters trr, Irrm Fig.10. Typical forward recovery voltage, Vfr as a function of rate of change of current dIF/dt. Fig.11. Definition of forward recovery voltage Vfr Fig.12. Typical and maximum forward characteristic IF = f(VF); Tj = 25˚C and 150˚C. Fig.13. Typical reverse leakage current as a function of reverse voltage. IR = f(VR); parameter Tj Fig.14. Maximum thermal impedance Zth j-mb as a function of pulse width. Q s 100%10% time dI dt F I R I F I rrm t rr 01234 BYC10-600 Forward voltage, VF (V) Forward current, IF (A) maxtyp Tj = 25 C Tj = 150 C 0 50 100 150 200

20 BYC10-600

Tj = 25 C Rate of change of current, dIF/dt (A/ s) Peak forward recovery voltage, Vfr (V) typ IF = 10 A 0 100 200 300 400 500 600 BYC10-600 1uA 10uA 100uA 1mA 10mA 100mA Reverse leakage current (A) Reverse voltage (V) Tj = 125 C 100 C 75 C 50 C 25 C time time V F V fr V F I F 1us 10us 100us 1ms 10ms 100ms 1s 10s0.001 0.01 0.1 BYV79Epulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T TP t D August 2018 4 Rev 1.500

WeEn Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss MECHANICAL DATA August 2018 5 Rev 1.500

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