BYC10-600CT

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Product specification August 2018 DISCRETE SEMICONDUCTORS BYC10-600CT Dual rectifier diode ultrafast, low switching loss

WeEn Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss FEATURES SYMBOL QUICK REFERENCE DATA

• Dual diode VR = 600 V
• Extremely fast switching
• Low reverse recovery current VF ≤ 1.75 V
• Low thermal resistance
• Reduces switching losses in IO(AV) = 10 A associated MOSFET trr = 19 ns (typ) APPLICATIONS PINNING SOT78 (TO220AB)
• Active power factor correction PIN DESCRIPTION
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched 1 anode 1 mode power supplies. 2 cathode The BYC10-600CT is supplied in the SOT78 (TO220AB) 3 anode 2 conventional leaded package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM Peak repetitive reverse voltage - 600 V VRWM Crest working reverse voltage - 600 V VR Continuous reverse voltage T mb ≤ 110 ˚C - 500 V IO(AV) Average output current (both δ = 0.5; with reapplied VRRM(max); - 10 A diodes conducting) Tmb ≤ 50 ˚C1 IFRM Repetitive peak forward current δ = 0.5; with reapplied VRRM(max); - 10 A per diode Tmb ≤ 50 ˚C1 IFSM Non-repetitive peak forward t = 10 ms - 40 A current per diode t = 8.3 ms - 44 A sinusoidal; Tj = 150˚C prior to surge with reapplied VRWM(max) Tstg Storage temperature -40 150 ˚C Tj Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to per diode - - 2.5 K/W mounting base both diodes - - 2.2 K/W Rth j-a Thermal resistance junction to in free air. - 60 - K/W ambient

1 Tmb(max) limited by thermal runaway

August 2018 1 Rev 1.300 1 2 mb sym125 A2A1 K

WeEn Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C, per diode unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF Forward voltage IF = 5 A; Tj = 150˚C - 1.4 1.75 V IF = 10 A; Tj = 150˚C - 1.75 2.2 V IF = 5 A; - 2.0 2.9 V IR Reverse current VR = 600 V - 9 100 μA VR = 500 V; Tj = 100 ˚C - 0.9 3.0 mA trr Reverse recovery time I F = 1 A; VR = 30 V; dIF/dt = 50 A/μs - 30 50 ns trr Reverse recovery time I F = 5 A; VR = 400 V; - 19 - ns dIF/dt = 500 A/μs trr Reverse recovery time I F = 5 A; VR = 400 V; - 25 30 ns dIF/dt = 500 A/μs; Tj = 100˚C Irrm Peak reverse recovery current I F = 5 A; VR = 400 V; - 0.7 3 A dIF/dt = 50 A/μs; Tj = 125˚C Irrm Peak reverse recovery current I F = 5 A; VR = 400 V; - 8 11 A dIF/dt = 500 A/μs; Tj = 125˚C Vfr Forward recovery voltage I F = 10 A; dIF/dt = 100 A/μs- 9 1 1 V Fig.1. Typical application, output rectifier in boost converter power factor correction circuit. Continuous conduction mode, where the transistor turns on whilst forward current is still flowing in the diode. Fig.2. Typical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still flowing in the other bridge leg diode. Vin Vo = 400 V d.c.

500 V MOSFET

Vin Vin = 400 V d.c. inductive load IFIR IL August 2018 2 Rev 1.300

WeEn Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss Fig.3. Maximum forward dissipation per diode as a function of average forward current; rectangular current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Typical reverse recovery switching losses per diode, as a function of rate of change of current dIF/dt. Fig.5. Typical switching losses in transistor due to reverse recovery of diode, as a function of of change of current dIF/dt. Fig.6. Origin of switching losses in transistor due to diode reverse recovery. Fig.7. Typical reverse recovery time trr, per diode as a function of rate of change of current dIF/dt. Fig.8. Typical peak reverse recovery current per diode, Irrm as a function of rate of change of current dIF/dt. 012345678 D = 1.0 0.5 0.2 0.1 BYC5-600 Rs = 0.09 Ohms Vo = 1.3 V 150 137.5 125 112.5 Average forward current, IF(AV) (A) Forward dissipation, PF (W) Tmb(max) C D = tp tp T T t I time ID Irrm VD dIF/dt ID = IL losses due to diode reverse recovery 100 1000 0.05 0.1 0.15 0.2 BYC5-600 f = 20 kHz Rate of change of current, dIF/dt (A/us) Diode reverse recovery switching losses, Pdsw (W) IF = 5 A 10 A 7.5 A Tj = 125 C VR = 400 V 100 1000

100 BYC5-600

Rate of change of current, dIF/dt (A/us) Reverse recovery time, trr (ns) 10 A 7.5 A IF = 5 A Tj = 125 C VR = 400 V 100 1000 BYC5-600 Rate of change of current, dIF/dt (A/us) Transistor losses due to diode reverse recovery, Ptsw (W) f = 20 kHz Tj = 125 C VR = 400 V IF = 5 A 7.5 A 10 A 100 1000 Rate of change of current, dIF/dt (A/us) Peak reverse recovery current, Irrm (A) Tj = 125 C VR = 400 V IF = 5 A 10 A August 2018 3 Rev 1.300

WeEn Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss Fig.9. Definition of reverse recovery parameters trr, Irrm Fig.10. Typical forward recovery voltage per diode, Vfr as a function of rate of change of current dIF/dt. Fig.11. Definition of forward recovery voltage Vfr Fig.12. Typical and maximum forward characteristic per diode, IF = f(VF); Tj = 25˚C and 150˚C. Fig.13. Typical reverse leakage current per diode as a function of reverse voltage. IR = f(VR); parameter Tj Fig.14. Maximum thermal impedance per diode, Zth j-mb as a function of pulse width. Q s 100%10% time dI dt F I R I F I rrm t rr 01234 BYC5-600 Forward voltage, VF (V) Forward current, IF (A) maxtyp Tj = 25 C Tj = 150 C 0 50 100 150 200

20 BYC5-600

Tj = 25 C Rate of change of current, dIF/dt (A/ s) Peak forward recovery voltage, Vfr (V) typ IF = 10 A 0 100 200 300 400 500 600 1uA 10uA 100uA 1mA 10mA 100mA BYC5-600 Reverse voltage (V) Reverse leakage current (A) Tj = 125 C 100 C 75 C 50 C 25 C time time V F V fr V F I F 1us 10us 100us 1ms 10ms 100ms 1s 10s0.001 0.01 0.1 BYV29pulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T TP t D August 2018 4 Rev 1.300

WeEn Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss MECHANICAL DATA August 2018 5 Rev 1.300 REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE EDECJIEC JEITA C-46SSOT78 3-lead TO-220AB SOT78 08-04-23 08-06-13 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. UNIT A mm 4.7 4.1 1.40 1.25 0.9 0.6 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 15.0 12.8 3.30 2.79 3.8 3.5 A DIMENSIONS (mm are the original dimensions) Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB 50 10 mm scale b b1(2) 1.6 1.0 c D 1.3 1.0 b2(2) D1 E e 2.54 L L1(1) L2(1) max. 3.0 p q 3.0 2.7 Q 2.6 2.2 D q p L 12 3 L1(1) b1(2) (3×) b2(2) (2×) e e b(3×) AE c Q L2(1) mounting base

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