BY4 TAYCHIPST | Alldatasheet
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4000V-16000V 1.0A-0.3A BY 4 THRU BY 16 Web Site: www.taychipst.com1 of 2
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E-mail: sales@taychipst.com MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS * Low forward voltage drop * High current capability * High reliability * High surge current capability * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Lead: Axial leads, solderable per MIL-STD-202, method 208 guranteed * Polarity: Color band denotes cathode end * Mounting position: Any Weight: 1.10 grams* High Voltage Silicon Rectifier Diodes Maximum ratings and Characteristics Type Rep. peak reverse volt. Period. Spitzensperrspg. VRRM [V] Surge peak reverse volt. Stoßspitzensperrspg. VRSM [V] Max. forward current Dauergrenzstrom IFAV [A] 1) Forward volt. Durchlass-Spg. VF [V] 2) BY4 4000 4000 1.0 < 4.0 BY6 6000 6000 1.0 < 6.0 BY8 8000 8000 0.5 < 8.0 BY12 12000 12000 0.5 < 10.0 BY16 16000 16000 0.3 < 15.0 Leakage Current Sperrstrom Tj = 25°C Tj = 100°C V = VRRM V = VRRM < 1 µA < 25 µA Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle TA = 25°C IFSM 100 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 50 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+150°C Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft thA < 25 K/W 1)
RATINGS AND CHARACTERISTIC CURVES BY 4 THRU BY 16 E-mail: sales@taychipst.com Web Site: www.taychipst.com 2 of 2 4000V-16000V 1.0A-0.3A BY 4 THRU BY 16 High Voltage Silicon Rectifier Diodes [A] I F Forward characteristics (typical values) Durchlasskennlinien (typische Werte) BY4 BY6 BY8 BY12 BY16 Rated forward current versus ambient temperature ) Zul. Richtstrom in Abh. von der Umgebungstemp. ) I FAV [%] 120 100 [°C]T A 150100500 Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz [A] î F 1 10 10 [n] 10 2 3