BY505 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of May 1996

1996 Sep 26

High-voltage soft-recovery rectifier book, halfpage M3D189

1996 Sep 26 2

Philips Semiconductors Product specification High-voltage soft-recovery rectifier BY505

FEATURES

  • Glass passivated
  • High maximum operating temperature
  • Low leakage current
  • Excellent stability
  • Soft-recovery switching characteristics
  • Compact construction.

APPLICATIONS

  • High-voltage applications for: – High frequencies – Switching applications.

DESCRIPTION

Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. Fig.1 Simplified outline (SOD61A) and symbol. The cathode lead is marked by a black band. handbook, halfpage MAM162 k a LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRSM non-repetitive peak reverse voltage − 2200 V VRRM repetitive peak reverse voltage − 2200 V VRW working reverse voltage − 2000 V IF(AV) average forward current averaged over any 20 ms period; Ttp=2 5°C; lead length = 10 mm; see Fig.2; see also Fig.4 − 85 mA averaged over any 20 ms period; Tamb =6 0°C; PCB mounting (see Fig.6); see Fig.3; see also Fig.4 − 50 mA I FRM repetitive peak forward current − 800 mA IFSM non-repetitive peak forward current t≤ 10 ms; half sinewave; Tj=T j max prior to surge; VR =V RWmax − 5A Tstg storage temperature −65 +120 °C Tj junction temperature −65 +120 °C

1996 Sep 26 3

Philips Semiconductors Product specification High-voltage soft-recovery rectifier BY505

ELECTRICAL CHARACTERISTICS

Tj=2 5°C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper≥40 µm, see Fig.6. For more information please refer to the“General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage I F = 100 mA; Tj=T j max; see Fig.5 −− 8.5 V IR reverse current V R =V RWmax ; Tj=T j max −− 3 µA Q r recovery charge when switched from I F = 100 mA to VR ≥ 100 V and dIF/dt =−200 mA/µs; see Fig.7 −− 1n C tf fall time when switched from I F = 100 mA to VR ≥ 100 V and dIF/dt =−200 mA/µs; see Fig.7 100 −− ns trr reverse recovery time when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt =−200 mA/µs; see Fig.7 − 200 − ns C d diode capacitance V R =0V ; f=1M H z − 2 − pF SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = 10 mm 100 K/W R th j-a thermal resistance from junction to ambient note 1 155 K/W

1996 Sep 26 4

Philips Semiconductors Product specification High-voltage soft-recovery rectifier BY505 GRAPHICAL DATA Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Switched mode application. a = 1.42;δ = 0.5; VR =V RWmax ; lead length = 10 mm. handbook, halfpage 0 80 120 MBH399 100

40 Ttp (°C)

IF(AV) (mA) Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Switched mode application. a = 1.42;δ = 0.5; VR =V RWmax ; device mounted as shown in Fig.6. handbook, halfpage 0 80 120 MBH400 100

40 Tamb (°C)

IF(AV) (mA) Fig.4 Maximum steady state power dissipation (forward plus leakage losses) as a function of average forward current. a=I F(RMS) /IF(AV);δ = 0.5; VR =V RWmax . handbook, halfpage 0 80 100 MBH401 500 1000 IF(AV) (mA) P (mW) 2 1.57a = 3 2.5 1.42 Fig.5 Forward current as a function of maximum forward voltage. Dotted line: Tj= 120°C. Solid line: Tj=2 5°C. handbook, halfpage 01 0 2 0 MBH402 100 200 VF (V) IF (mA)

1996 Sep 26 5

Philips Semiconductors Product specification High-voltage soft-recovery rectifier BY505 Fig.6 Device mounted on a printed-circuit board. Dimensions in mm. handbook, halfpage MGA200 Fig.7 Reverse recovery definitions. handbook, halfpage 90% 10% tf trr Q dI dt t IF IR MGD569 F r

1996 Sep 26 6

Philips Semiconductors Product specification High-voltage soft-recovery rectifier BY505 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.8 SOD61A. Dimensions in mm. The marking band indicates the cathode. handbook, full pagewidth 2.5 max 0.6 MGD6034.9 max max 32.5 min 32.5 min ka