BY359F-1500S

BY359F-1500 PHILIPS | Alldatasheet

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Technical content

Philips Semiconductors Preliminary specification Damper diode BY359F-1500, BY359F-1500S fast, high-voltage FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop V R = 1500 V
• Fast switching
• Soft recovery characteristic V F ≤ 1.8 V / 2 V
• High thermal cycling performance
• Isolated mounting tab I F(RMS) = 15.7 A IFSM ≤ 60 A trr ≤ 600 ns / 350 ns GENERAL DESCRIPTION PINNING SOD100 Glass-passivated double diffused PIN DESCRIPTION rectifier diode featuring low forward voltage drop, fast reverse recovery 1 cathode and soft recovery characteristic. The device is intended for use in TV 2 anode receivers and PC monitors. tab isolated The BY359F series is supplied in the conventional leaded SOD100 package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RSM Peak non-repetitive reverse - 1500 V voltage VRRM Peak repetitive reverse voltage - 1500 V VRWM Crest working reverse voltage - 1300 V IF(peak) Peak forward current 16-32kHz TV BY359F-1500 - 10 A 31-70kHz monitor BY359F-1500S - 7 A IF(RMS) RMS forward current - 15.7 A IFRM Peak repetitive forward current sinusoidal; a = 1.57 - 60 A IFSM Peak non-repetitive forward t = 10 ms - 60 A current t = 8.3 ms - 66 A sinusoidal; T j = 150 ˚C prior to surge; with reapplied VRWM(max) Tstg Storage temperature -40 150 ˚C Tj Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to with heatsink compound - - 4.8 K/W heatsink without heatsink compound - - 5.9 K/W R th j-a Thermal resistance junction to in free air. - 55 - K/W ambient k a case September 1998 1 Rev 1.300

Philips Semiconductors Preliminary specification Damper diode BY359F-1500, BY359F-1500S fast, high-voltage STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated BY359F-1500 BY359F-1500S SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT VF Forward voltage I F = 20 A 1.3 1.8 1.5 2.0 V IF = 10 A; Tj = 150˚C 1.00 1.5 1.25 1.75 V IR Reverse current V R = 1300 V 10 100 10 100 µA VR = 1300 V; 50 300 100 600 µA Tj = 100 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated BY359F-1500 BY359F-1500S SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT t rr Reverse recovery time I F = 2 A; VR ≥ 30 V; 0.47 0.60 0.28 0.35 µs Q s Reverse recovery charge -dI F/dt = 20 A/µs 1.6 2.0 0.70 0.95 µC Vfr Peak forward recovery voltage IF = 10 A; 11.0 - 17.0 - V dIF/dt = 30 A/µs Fig.1. Definition of trr, Qs and Irrm Fig.2. Definition of Vfr 100% time dI dt F I R IF I rrm trr 25%Qs time time V F V fr V F IF September 1998 2 Rev 1.300

Philips Semiconductors Preliminary specification Damper diode BY359F-1500, BY359F-1500S fast, high-voltage Fig.3. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM . Fig.4. Transient thermal impedance Zth = f(tp) Fig.5. BY359F-1500 forward characteristic IF = f(VF); parameter Tj Fig.6. BY359F-1500S forward characteristic IF = f(VF); parameter Tj 1ms 10ms 0.1s 1s 10s tp / s IFS(RMS) / A BY359 IFSM 1.0 2.0 IF / A VF / V max typ Tj=150C Tj=25C BY359 1.0 2.0 IF / A VF / V max typ Tj=150C Tj=25C BY359S 1us 10us 100us 1ms 10ms 100ms 1s 10s0.001 0.01 0.1 BY359Fpulse width, tp (s) Transient thermal impedance, Zth j-hs (K/W) D = tp tp T TP t D September 1998 3 Rev 1.300

Philips Semiconductors Preliminary specification Damper diode BY359F-1500, BY359F-1500S fast, high-voltage MECHANICAL DATA Dimensions in mm Net Mass: 2 g Fig.7. SOD100; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 seating plane 7.9 7.5 max 0.55 max 1.3 13.5 min 5.08 0.9 0.7M0.4 top view 3.5 max not tinned 4.4 ka September 1998 4 Rev 1.300

Philips Semiconductors Preliminary specification Damper diode BY359F-1500, BY359F-1500S fast, high-voltage DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 5 Rev 1.300