BY251 HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o 3.0A
- VRRM 200V-1300V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode BY25X X:From 1 to 5 DO-2 DO-27 Plastic-Encapsulate Diodes Item Symbol Unit Conditions 251 Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60Hz Half-sine wave, Resistance load, Ta=50℃ Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 100 Junction Temperature T j -55~+125 Storage Temperature T stg ℃ -55 ~ +150 Item Symbol Unit Test Condition Max Peak Forward Voltage V FM V I FM =3.0A 1.1 I RRM1 Ta=25℃ 5 Peak Reverse Current I RRM2 μA V RM RRM Ta=125℃ 50 R θJ-A Between junction and ambient 20 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and lead 10 252 254 255 BY 1300 Maximum RMS V RMS V Voltage 253 800600400200 910560420280140 BY251 THRU BY255
H igh Diode Semiconductor 1.5 2.25 50 150 FIG.1 FORWARD CURRENT DERATING CURVE IO(A) Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375''(9.5mm) Lead Length Ta( 100 0.75 3.0 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 100 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 100 VF(V
H igh Diode Semiconductor DO-2 Unit: in inches (millimeters) MIN 0.96(24.5) MIN 0.96(24.5)
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers