BY228Z DSK | Alldatasheet
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FEATURES
Cas e:JEDEC DO-27,m olded plas tic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight:0.041 ounces,1.15 gram s Mounting position: Any MA XIMUM RA TINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 5.0 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 3. Thermal resistance f rom junction to ambient. BY228(Z) DO - 27 Easily cleaned with Freon,Alcohol,Isopropanol A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55---- +150 -55---- +150 1000 5.0 150.0 I R A VOLTAGE RANGE: 1500 V CURR ENT: 5.0 A 5.0 A FAST RECOVERY RECTIFIER I F(AV) The plastic material carries U/L recognition 94V-0 I FSM 1.5 50.0 BY228 1500 1050 1500 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
0.01 0.02 0.06 0.04 0.1 0.2 0.4 1.0 100 T J =25 Pulse Width=300uS 1.0 .1 .2 200 100 202 10 100 40 T J =25 f=1MHz 4.4 T J =25 8.3ms Single Half Sine-Wave 100 1.0 2.0 3.0 4.0 5.0 50 125 175 Single Phase Half Wave 60H Z Resistive or Inductive Load 20075 150100 6.0 -1.0A -0.25A +0.5A t rr 1cm PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) AMPERES AMPERES JUNCTION CAPACITANCE,pF PEAK FORWARD SURGE CURRENT AMPERES BY228(Z) SET TIME BASE FOR 500 ns /cm INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT T EMPERAT URE, N OTE S:1.R ISE TIM E =7ns M AX. IN P U T IM P E D AN C E =1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM AVERAGE FORWARD RECTIFIED CURRENT FIG.4--TYPICAL JUNCTION CAPACITANCE FIG.5--PEAK FORWARD SURGE CURRENT 2.R ISE TIM E =10ns M AX. SOU R C E IM P E D AN C E =5O INSTANTANEOUS FORWARD CURRENT FIG.3 -- FORWARD DERATING CURVE FIG.2 --TYPICAL FORWARD CHARACTERISTIC REVERSE VOLT AGE,VOLT S NUMBER OF CYCLES AT 60 Hz www.diode.kr Diode Semiconductor Korea