BZX55C TSC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
Fast switching speed General purpose rectification Silicon epitaxial planar construction Mechanical Data Case: DO-35 Leads:Solderableper MIL-STD-202, Method 208 Polarity: Cathode band Marking: Type number Weight: 0.13 grams (approx.) DO-35 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 O C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Forward Voltage @ IF = 100mA VF 1.0 V Power Dissipation (Note 1) Pd 500 mW Thermal Resistance Junction to Ambient Air (Note 2) RθJA 0.3 K /mW Operating and Storage Temperature Range TJ, TSTG -65 to + 175 O C Notes: 1. Valid Provided that Lead are kept at ambient temperature at a distance of 8mm from case. 2. Valid provided that leads at a distance of 10mm from case are kept at ambient temperature. Version: A07
RATINGS AND CHARACTERISTIC CURVES (BZX55C SERIES) CHANGES IN THE POWER DISSIPATION DUE TO THE AMBIENT TEMPERATURE LEAD TEMPERATURE. ( C)0 AMBIENT TEMPERATURE
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) Maximum Typical Regulator Temp. Device IZT Current Coefficient Type ZZT @ IZT IR VR(suffix B) IzM Min (V) Max (V) mA Ohms Ohms mA uA V mA % / OC Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, 300us pulse width, period = 5ms. 3. f = 1KHz. ZZK @ IZK Nominal Zener Voltage Maximum Zener Maximum Reverse Vz at Izt Impedance Current