BXY43 INFINEON | Alldatasheet

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Technical content

Semiconductor Group 1 of 6 Draft B, September 99 HiRel Silicon PIN Diode

  • HiRel Discrete and Microwave Semiconductor
  • Current controlled RF resistor for RF attenuators and switches
  • High reverse voltage
  • Hermetically sealed microwave package Space Qualified ESA/SCC Detail Spec. No.: 5513/030 Type Variant No.s 01 to 03 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BXY43-T (ql) - see below 12 T BXY43-T1 (ql) 12 T1 BXY43-P1 (ql) 12 T2 BXY43-FP (ql) 1 1' FP (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702X151 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702X169 (see order instructions for ordering example) TT 1 P1 FP

Semiconductor Group 2 of 6 Draft B, September 99 Maximum Ratings Parameter Symbol Values Unit Reverse Voltage V R 150 V Forward Current I F 400 mA Power Dissipation 1) Ptot 500 mW Operating Temperature Range T op -55 to +150 °C Storage Temperature Range T stg -65 to +175 °C Soldering Temperature 2) Tsol +235 °C Junction Temperature T j 150 °C Thermal Resistance Junction-Case BXY43-T BXY43-T1 BXY43-P1 BXY43-FP R th(j-c) 100 125 100 K/W Notes.: 1.)For BXY43-T: At T CASE = 100 °C. For T CASE > 100 °C derating is required. For BXY43-T1: At T CASE = 87,5 °C. For T CASE > 87,5 °C derating is required. For BXY43-P1: At T CASE = 105 °C. For T CASE > 105 °C derating is required. For BXY43-FP: At T CASE = 100 °C. For T CASE > 100 °C derating is required. 2.) During 5 sec. maximum. The same terminal shall not be resoldered until 5 minutes have elapsed.

Electrical Characteristics

at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse Current 1 VR1=150V IR1 - - 100 nA Reverse Current 2 VR2=100V IR2 - - 10 nA Forward Voltage IF=100mA VF -0 , 9 7 1 V

Semiconductor Group 3 of 6 Draft B, September 99 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Total Capacitance VR=50V; f=1MHz BXY43-T, -T1 BXY43-P1 BXY43-FP C T 0,3 0,4 0,3 0,50 0,6 0,45 0,75 0,85 pF Forward Resistance 1 f=100MHz, IF1=20µA RF1 -5 5 7 0 Ω Forward Resistance 2 f=100MHz, IF2=1mA RF2 -2 , 2 3 , 0 Ω Forward Resistance 3 f=100MHz, IF3=10mA RF3 -0 , 9 1 , 5 Ω Minority Carrier Lifetime IF=10mA, IR=6mA, IR=3mA τL 250 650 ns

Semiconductor Group 4 of 6 Draft B, September 99 Order Instructions: Full type variant including package variant and quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: BXY43- (x) (ql) (x): Package Variant (ql): Quality Level Ordering Example: Ordering Code: Q62702X169 BXY43-T1 ES For BXY43 in T1 Package; ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: ++89 234 24480 Fax.: ++89 234 25568 e-mail: martin.wimmers@infineon.com Address: Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich

Semiconductor Group 5 of 6 Draft B, September 99 T Package B C Y1 Y2 A 1 2 Symbol Millimetre min max A 1,30 1,45 B 1,15 1,35 C - 0,40 B C Y1 Y2 G D H A EF G 1 2 Symbol Millimetre min max A 1,30 1,45 B 1,15 1,35 C - 0,40 D 0,10 0,50 E - 0,30 F 0,06 0,10 G5 , 5 0 - H 0,40 0,60 Cathode D C A B Y1 Y2 1 2 Symbol Millimetre min max ∅ A 2,0 2,2 ∅ B 3,0 3,2 C 1,45 1,7 D0 , 4 0 , 6

Semiconductor Group 6 of 6 Draft B, September 99 11 ' n.c. n.c. F d L L B D Symbol Millimetre min max B 3,10 3,55 B1 3,00 3,30 D 1,30 1,70 D1 0,55 0,65 d 0,10 0,15 d1 0,25 0,40 F 2,40 2,60 L5 , 5 0 - Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000).