BXY43_11 INFINEON | Alldatasheet

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Technical content

IFAG IM M RPD D HIR 1 of 5 V2, February 2011 HiRel Silicon PIN Diode  HiRel Discrete and Microwave Semiconductor  Current controlled RF resistor for RF attenuators and switches  High reverse voltage  Hermetically sealed microwave package Space Qualified ESA/SCC Detail Spec. No.: 5513/030 Type Variant No.s 01 to 03 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BXY43-T (ql) - see below 1 2 T BXY43-T1 (ql) 1 2 (ql) Quality Level: P: Professional Quality H: High Rel Quality S: Space Quality ES: ESA Space Quality (see order instructions for ordering example) T T1

IFAG IM M RPD D HIR 2 of 5 V2, February 2011 Maximum Ratings Parameter Symbol Values Unit Reverse Voltage VR 150 V Forward Current IF 400 mA Power Dissipation 1) Ptot 500 mW Operating Temperature Range Top -55 to +150 °C Storage Temperature Range Tstg -65 to +175 °C Soldering Temperature 2) Tsol +235 °C Junction Temperature Tj 150 °C Thermal Resistance Junction-Case BXY43-T BXY43-T1 Rth(j-c) 100 125 K/W Notes.: 1.) For BXY43-T: At TCASE = 100 °C. For TCASE > 100 °C derating is required. For BXY43-T1: At TCASE = 87,5 °C. For TCASE > 87,5 °C derating is required. 2.) During 5 sec. maximum. The same terminal shall not be resoldered until 5 minutes have elapsed.

Electrical Characteristics

at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse Current 1 VR1=150V IR1 - - 100 nA Reverse Current 2 VR2=100V IR2 - - 10 nA Forward Voltage IF=100mA VF - 0,97 1 V

IFAG IM M RPD D HIR 3 of 5 V2, February 2011 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Total Capacitance VR=50V; f=1MHz BXY43-T, -T1 CT 0,3 0,45 pF Forward Resistance 1 f=100MHz, IF1=20µA RF1 - Forward Resistance 2 f=100MHz, IF2=1mA RF2 - 2,2 3,0 Forward Resistance 3 f=100MHz, IF3=10mA RF3 - 0,9 1,5 Minority Carrier Lifetime IF=10mA, IR=6mA, IR=3mA τL 250 650 ns

IFAG IM M RPD D HIR 4 of 5 V2, February 2011 T Package B C Y1 Y2 A 1 2 Symbol Millimetre min max A 1,30 1,45 B 1,15 1,35 C - 0,40 B C Y1 Y2 G D H A EF G 1 2 Symbol Millimetre min max A 1,30 1,45 B 1,15 1,35 C - 0,40 D 0,10 0,50 E - 0,30 F 0,06 0,10 G 5,50 - H 0,40 0,60

IFAG IM M RPD D HIR 5 of 5 V2, February 2011 Edition 2011-02 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© Infineon Technologies AG 2011 All Rights Reserved. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.