BXP4N70 BRIDGELUX | Alldatasheet
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Technical content
B r i d g e l u x W u X i R & D C O . , L T D BXP4N70 Bridgelux WuXi R&D CO., LTD Page 1 of 8 Version: 1.1 Halogen Free 700V 4A N-Channel Enhancement Mode Power MOSFET SYMBOL TO-251L TO-252 TO-220 TO-220F ASSEMBLY MESSAGE ABSOLUTE MAXIMUM RATINGS (TC=25°Cunless otherwisenoted) Parameter Symbol Rating Unit BXP4N70U/D BXP4N70P BXP4N70F Drain-SourceVoltage VDSS 700 V DrainCurrent Continuous(TC =25°C) ID 4 A Continuous(TC =100°C) 3 A DrainCurrent Pulsed(Note1) IDM 16 A Gate-SourceVoltage VGSS ±30 V AvalancheEnergy SinglePulse(Note2) EAS 190 mJ AvalancheCurrent (Note1) IAR 4 A PeakDiodeRecoverydv/dt(Note3) dv/dt 5 V/ns Power Dissipation(Note2) TC =25°C PD 75 95 30 W Derateabove25°C 0.6 0.76 0.24 W/°C MaximumJunctionTemperature TJ 150 °C StorageTemperatureRange TSTG -55to150 °C Note： 1.RepetitiveRating: Pulsewidth limited bymaximum junction temperature 2.L=10mH,VDD=50V,RG=25Ω,StartingTJ=25°C 3.ISD ≤4.0A, di/dt≤100A/µs,VDD ≤BVDSS,StartingTJ=25°C Product Name Package Packaging BXP4N70U TO-251L Tube BXP4N70D TO-252 Tube/Reel BXP4N70P TO-220 Tube BXP4N70F TO-220F Tube
FEATURES
- RDSON≤3Ω @Vgs=10V,Id=2A
- ExcellentRDS(ON)andLowGateCharge
- Fastswitchingcapability
- Leadfreeproductisacquired General Description BXP4N70 is Bridgelux high voltage MOSFET family based on advanced planar DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch modepower supplies.
B r i d g e l u x W u X i R & D C O . , L T D BXP4N70 Bridgelux WuXi R&D CO., LTD Page 2 of 8 Version: 1.1 Halogen Free THERMAL CHARACTERISTICS Parameter Symbol Max. Unit BXP4N70U/D BXP4N70P BXP4N70F ThermalResistance,Junction-to-Case RθJC 1.67 1.31 4.17 °C/W ThermalResistance,Junction-to-Ambient RθJA 62.5 62.5 62.5 °C/W ELECTRICAL CHARACTERISTICS（TJ=25℃,unlessotherwiseNoted） Parameter Symbol Test Condition Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-SourceBreakdownVoltage BVDSS VGS=0V,ID=250µA 700 V ZeroGateVoltageDrainCurrent IDSS VDS=700V,VGS=0V 1 uA VDS=560V,TC=125°C 100 uA Gate-BodyLeakageCurrent,Forward IGSS VGS=30V 100 nA Gate-BodyLeakageCurrent,Reverse VGS=-30V -100 nA BreakdownVoltageTemperature Coefficient △BVDSS/ △TJ ID=250µA 0.7 V/℃ ON CHARACTERISTICS GateThresholdVoltage VGS(TH) VDS=VGS,ID=250µA 2 4 V Drain-SourceOn-StateResistance RDS(ON) VGS=10V,ID=2A 2.55 3 Ω ForwardTransconductance(Note4) gFS VDS=50V,ID=2A 3.5 S DYNAMIC PARAMETERS InputCapacitance CISS VDS=25V,VGS=0V, f=1.0MHz 637 pF OutputCapacitance COSS 50 pF ReverseTransferCapacitance CRSS 4 pF SWITCHING PARAMETERS Turn-ONDelayTime tD(ON) VDD=350V,ID=4A,VGS= 10V,RG=10Ω (Note4,5) 12 ns Turn-ONRiseTime tR 20 ns Turn-OFFDelayTime tD(OFF) 30 ns Turn-OFFFall-Time tF 8 ns TotalGateCharge(Note5) QG VDS=560V,VGS=10V,ID =4A (Note4,5) 12.9 nC GateSourceCharge QGS 3 nC GateDrainCharge QGD 6 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-SourceDiodeForwardVoltage VSD IS=4A,VGS=0V 1.4 V DiodeContinuousForwardCurrent IS 4 A PulsedDrain-SourceCurrent ISM 16 A ReverseRecoveryTime tRR VGS=0V,ISD=4A di/dt=100A/µs(Note4,5) 401 ns ReverseRecoveryCharge QRR 2.1 uC Note： 4.PulseTest:Pulsewidth≤300µs,Dutycycle≤2% 5.Essentiallyindependentofoperatingtemperature
B r i d g e l u x W u X i R & D C O . , L T D BXP4N70 Bridgelux WuXi R&D CO., LTD Page 3 of 8 Version: 1.1 Halogen Free TYPICAL CHARACTERISTICS VDS Drain-Source Voltage(v) VGS Gate-Source Voltage(v) Figure1. Typical Output Characteristics Figure2. Typical Transfer Characteristics ID Drain Current(A) VSD Source-Drain Voltage(v) Figure3. On-Resistance versus Drain Current Figure4. Diode forward voltage versus Current VDS Drain-Source Voltage(v) QG Gate-Charge(nC) Figure5. Typical Capacitance versus VDS Figure6. Typical Gate Charge versus VGS Id,Drain Current(A) Id,Drain-to-SourceCurrent(A) Is,Reverse Drain Current(A) Rds(on),Drain-to-Source Resistance(Ω) VGS,Gate-to-Source Voltage(V) C,Capacitance(pF)
B r i d g e l u x W u X i R & D C O . , L T D BXP4N70 Bridgelux WuXi R&D CO., LTD Page 4 of 8 Version: 1.1 Halogen Free TYPICAL CHARACTERISTICS(Cont.) TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure7. BVDSS Variation with Temperature Figure8. On-Resistance Variation with Temperature VDS Drain-Source Voltage(v) VDS Drain-Source Voltage(v) Figure9. Maximum Safe Operating Area Figure10. Maximum Safe Operating Area BXP4N70U/D/P BXP4N70F TC, Case Temperature (℃) Figure10. Maximum Continuous Drain Current versus Case Temperature BVDSS,(Normalized) Drain-to-Source Breakdown Voltage(V)Id,Drain Current(A) Id,Drain Current(A) Rds(on),(Normalized) Drain-to-Source on Resistance Id,Drain Current(A)
B r i d g e l u x W u X i R & D C O . , L T D BXP4N70 Bridgelux WuXi R&D CO., LTD Page 5 of 8 Version: 1.1 Halogen Free TEST CIRCUITS AND WAVEFORMS
B r i d g e l u x W u X i R & D C O . , L T D BXP4N70 Bridgelux WuXi R&D CO., LTD Page 6 of 8 Version: 1.1 Halogen Free TEST CIRCUITS AND WAVEFORMS(Cont.)
B r i d g e l u x W u X i R & D C O . , L T D BXP4N70 Bridgelux WuXi R&D CO., LTD Page 7 of 8 Version: 1.1 Halogen Free
Revision history
12-Nov-2021 1.0 First release 5-Jan-2022 1.1 Update parameter
B r i d g e l u x W u X i R & D C O . , L T D BXP4N70 Bridgelux WuXi R&D CO., LTD Page 8 of 8 Version: 1.1 Halogen Free Disclaimers: Bridgelux WuXi has made reasonable commercial efforts to ensure that the information given in this data sheet is correct. However,it must clearly beunderstood that such informationis for guidance only anddoes notconstitute anyrepresentation orformpartofanyofferorcontract. For documents and material available from this data sheet, Bridgelux WuXi does not warrant or assume any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, product, technology or process disclosed hereunder. Bridgelux WuXi reserves the rights to at its own discretion to make any changes or improvements to this data sheet. Unless said data sheet is incorporated into the formal contract, anycustomer should not rely on the information as any specification or product parameters duly committed by Bridgelux WuXi. Customers are hereby advised to verify that the information contained herein is current and complete before the entering of any contract or acknowledgement of any purchase order. Accordingly, all products specified hereunder shall be sold subject to Bridgelux WuXi’s terms and conditions supplied at the time of order acknowledgement. Except where agreed upon by contractual agreement, testing of all parameters of each productisnotnecessarilyperformed. Bridgelux WuXi does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others.Reproductionofinformationcontainedhereinshallbeonlypermissibleifsuchreproductioniswithoutanymodification oralteration.Reproductionofthisinformationwithanyalterationisanunfairanddeceptivebusinesspractice.BridgeluxWuXi isnotresponsibleorliableforsuchaltereddocumentation. Resale of Bridgelux WuXi’s products with statements different from or beyond the parameters stated by Bridgelux WuXi for that product or service voids all express or implied warrantees for the associated Bridgelux WuXi’s product or service and is unfairanddeceptivebusinesspractice.BridgeluxWuXiisnotresponsibleorliableforanysuchstatements. Bridgelux WuXi’s products are not authorized for use as critical components in life support devices or systems without the expresswrittenapprovalofBridgeluxWuXi.Asusedherein: 1. Lifesupportdevicesorsystemsaredevicesor systemswhich,(a) areintendedforsurgicalimplant intothebody,or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use providedinthelabeling,canbereasonablyexpectedtoresultinasignificantinjurytotheuser. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expectedtocausethefailureofthelifesupportdeviceorsystem,ortoaffectitssafetyoreffectiveness.