BXP18N20 BRIDGELUX | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 8
Technical content
B r i d g e l u x W u X i R & D C O . , L T D BXP18N20 Bridgelux WuXi R&D CO., LTD Page 1 of 8 Version: 1.1 Halogen Free 200V 18A N-Channel Enhancement Mode Power MOSFET SYMBOL TO-252 TO-220 TO-220F ASSEMBLY MESSAGE ABSOLUTE MAXIMUM RATINGS (TC=25°Cunless otherwisenoted) Parameter Symbol Rating Unit BXP18N20D BXP18N20P BXP18N20F Drain-SourceVoltage VDSS 200 V DrainCurrent Continuous(TC =25°C) ID 18 A Continuous(TC =100°C) 11 A DrainCurrent Pulsed(Note1) IDM 72 A Gate-SourceVoltage VGSS ±30 V AvalancheEnergy SinglePulse(Note2) EAS 845 mJ AvalancheCurrent (Note1) IAR 4.2 A PeakDiodeRecoverydv/dt(Note3) dv/dt 5 V/ns Power Dissipation(Note2) TC =25°C PD 90 95 55 W Derateabove25°C 0.72 0.76 0.44 W/°C MaximumJunctionTemperature TJ 150 °C StorageTemperatureRange TSTG -55to150 °C Note： 1.RepetitiveRating: Pulsewidth limited bymaximum junction temperature 2.L=10mH,ID=13A,VDD=50V,RG=25 Ω,StartingTJ=25°C 3.ISD ≤18A, di/dt≤100A/µs,VDD ≤BVDSS,StartingTJ=25°C Product Name Package Packaging BXP18N20D TO-252 Tube/Reel BXP18N20P TO-220 Tube BXP18N20F TO-220F Tube
FEATURES
- RDSON≤0.18Ω @Vgs=10V,Id=9A
- ExcellentRDS(ON)andLowGateCharge
- Fastswitchingcapability
- Leadfreeproductisacquired General Description BXP18N20 is Bridgelux high voltage MOSFET family based on advanced planar DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch modepower supplies.
B r i d g e l u x W u X i R & D C O . , L T D BXP18N20 Bridgelux WuXi R&D CO., LTD Page 2 of 8 Version: 1.1 Halogen Free THERMAL CHARACTERISTICS Parameter Symbol Max. Unit BXP18N20D BXP18N20P BXP18N20F ThermalResistance,Junction-to-Case RθJC 1.38 1.31 2.27 °C/W ThermalResistance,Junction-to-Ambient RθJA 100 62.5 62.5 °C/W ELECTRICAL CHARACTERISTICS（TJ=25℃,unlessotherwiseNoted） Parameter Symbol Test Condition Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-SourceBreakdownVoltage BVDSS VGS=0V,ID=250µA 200 V ZeroGateVoltageDrainCurrent IDSS VDS=200V,VGS=0V 1 uA VDS=160V,TC=125°C 10 uA Gate-BodyLeakageCurrent,Forward IGSS VGS=30V 100 nA Gate-BodyLeakageCurrent,Reverse VGS=-30V -100 nA BreakdownVoltageTemperature Coefficient △BVDSS/ △TJ ID=250µA 0.24 V/℃ ON CHARACTERISTICS GateThresholdVoltage VGS(TH) VDS=VGS,ID=250µA 2 4 V Drain-SourceOn-StateResistance RDS(ON) VGS=10V,ID=9A 0.12 0.18 Ω ForwardTransconductance(Note4) gFS VDS=15V,ID=18A 18 S DYNAMIC PARAMETERS InputCapacitance CISS VDS=25V,VGS=0V, f=1.0MHz 1140 pF OutputCapacitance COSS 180 pF ReverseTransferCapacitance CRSS 22 pF SWITCHING PARAMETERS Turn-ONDelayTime tD(ON) VDD=100V,ID=18A,VGS= 10V,RG=2.4Ω (Note4,5) 15 ns Turn-ONRiseTime tR 32 ns Turn-OFFDelayTime tD(OFF) 28 ns Turn-OFFFall-Time tF 7 ns TotalGateCharge(Note5) QG VDS=100V,VGS=10V,ID =18A (Note4,5) 23 nC GateSourceCharge QGS 7 nC GateDrainCharge QGD 9 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-SourceDiodeForwardVoltage VSD IS=18A,VGS=0V 1.5 V DiodeContinuousForwardCurrent IS 18 A PulsedDrain-SourceCurrent ISM 72 A ReverseRecoveryTime tRR VGS=0V,ISD=18A di/dt=100A/µs(Note4,5) 165 ns ReverseRecoveryCharge QRR 0.88 uC Note： 4.PulseTest:Pulsewidth≤300µs,Dutycycle≤2% 5.Essentiallyindependentofoperatingtemperature
B r i d g e l u x W u X i R & D C O . , L T D BXP18N20 Bridgelux WuXi R&D CO., LTD Page 3 of 8 Version: 1.1 Halogen Free TYPICAL CHARACTERISTICS VDS Drain-Source Voltage(v) VGS Gate-Source Voltage(v) Figure1. Typical Output Characteristics Figure2. Typical Transfer Characteristics ID Drain Current(A) VSD Source-Drain Voltage(v) Figure3. On-Resistance versus Drain Current Figure4. Diode forward voltage versus Current VDS Drain-Source Voltage(v) QG Gate-Charge(nC) Figure5. Typical Capacitance versus VDS Figure6. Typical Gate Charge versus VGS Id,Drain Current(A) Id,Drain-to-SourceCurrent(A) Is,Reverse Drain Current(A) Rds(on),Drain-to-Source Resistance(Ω) VGS,Gate-to-Source Voltage(V) C,Capacitance(pF)
B r i d g e l u x W u X i R & D C O . , L T D BXP18N20 Bridgelux WuXi R&D CO., LTD Page 4 of 8 Version: 1.1 Halogen Free TYPICAL CHARACTERISTICS(Cont.) TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure7. BVDSS Variation with Temperature Figure8. On-Resistance Variation with Temperature VDS Drain-Source Voltage(v) VDS Drain-Source Voltage(v) Figure9. Maximum Safe Operating Area Figure9. Maximum Safe Operating Area BXP18N20D/P BXP18N20F TC, Case Temperature (℃) Figure10. Maximum Continuous Drain Current versus Case Temperature BVDSS,(Normalized) Drain-to-Source Breakdown Voltage(V)Id,Drain Current(A)ID,Drain Current(A) Id,Drain Current(A) Rds(on),(Normalized) Drain-to-Source on Resistance
B r i d g e l u x W u X i R & D C O . , L T D BXP18N20 Bridgelux WuXi R&D CO., LTD Page 5 of 8 Version: 1.1 Halogen Free TEST CIRCUITS AND WAVEFORMS
B r i d g e l u x W u X i R & D C O . , L T D BXP18N20 Bridgelux WuXi R&D CO., LTD Page 6 of 8 Version: 1.1 Halogen Free TEST CIRCUITS AND WAVEFORMS(Cont.)
B r i d g e l u x W u X i R & D C O . , L T D BXP18N20 Bridgelux WuXi R&D CO., LTD Page 7 of 8 Version: 1.1 Halogen Free
Revision history
26-Nov-2021 1.0 First release 6-Jan-2022 1.1 Update parameter
B r i d g e l u x W u X i R & D C O . , L T D BXP18N20 Bridgelux WuXi R&D CO., LTD Page 8 of 8 Version: 1.1 Halogen Free Disclaimers: Bridgelux WuXi has made reasonable commercial efforts to ensure that the information given in this data sheet is correct. However,it must clearly beunderstood that such informationis for guidance only anddoes notconstitute anyrepresentation orformpartofanyofferorcontract. For documents and material available from this data sheet, Bridgelux WuXi does not warrant or assume any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, product, technology or process disclosed hereunder. Bridgelux WuXi reserves the rights to at its own discretion to make any changes or improvements to this data sheet. Unless said data sheet is incorporated into the formal contract, anycustomer should not rely on the information as any specification or product parameters duly committed by Bridgelux WuXi. Customers are hereby advised to verify that the information contained herein is current and complete before the entering of any contract or acknowledgement of any purchase order. Accordingly, all products specified hereunder shall be sold subject to Bridgelux WuXi’s terms and conditions supplied at the time of order acknowledgement. Except where agreed upon by contractual agreement, testing of all parameters of each productisnotnecessarilyperformed. Bridgelux WuXi does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others.Reproductionofinformationcontainedhereinshallbeonlypermissibleifsuchreproductioniswithoutanymodification oralteration.Reproductionofthisinformationwithanyalterationisanunfairanddeceptivebusinesspractice.BridgeluxWuXi isnotresponsibleorliableforsuchaltereddocumentation. Resale of Bridgelux WuXi’s products with statements different from or beyond the parameters stated by Bridgelux WuXi for that product or service voids all express or implied warrantees for the associated Bridgelux WuXi’s product or service and is unfairanddeceptivebusinesspractice.BridgeluxWuXiisnotresponsibleorliableforanysuchstatements. Bridgelux WuXi’s products are not authorized for use as critical components in life support devices or systems without the expresswrittenapprovalofBridgeluxWuXi.Asusedherein: 1. Lifesupportdevicesorsystemsaredevicesor systemswhich,(a) areintendedforsurgicalimplant intothebody,or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use providedinthelabeling,canbereasonablyexpectedtoresultinasignificantinjurytotheuser. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expectedtocausethefailureofthelifesupportdeviceorsystem,ortoaffectitssafetyoreffectiveness.