BXP10N60

BXP10N60 BRIDGELUX | Alldatasheet

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Technical content

B r i d g e l u x W u X i R & D C O . , L T D BXP10N60 Bridgelux WuXi R&D CO., LTD Page 1 of 8 Version: 1.1 Halogen Free 600V 10A N-Channel Enhancement Mode Power MOSFET SYMBOL TO-220 TO-220F ASSEMBLY MESSAGE ABSOLUTE MAXIMUM RATINGS (TC=25°Cunless otherwisenoted) Parameter Symbol Rating Unit BXP10N60P BXP10N60F Drain-SourceVoltage VDSS 600 V DrainCurrent Continuous(TC =25°C) ID 10 A Continuous(TC =100°C) 5 A DrainCurrent Pulsed(Note1) IDM 40 A Gate-SourceVoltage VGSS ±30 V AvalancheEnergy SinglePulse(Note2) EAS 725 mJ Repetitive (Note1) EAR 16.5 mJ AvalancheCurrent (Note1) IAR 10 A PeakDiodeRecoverydv/dt(Note3) dv/dt 4.5 V/ns Power Dissipation(Note TC =25°C PD 178 48 W Derateabove25°C 1.42 0.38 W/°C MaximumJunctionTemperature TJ 150 °C StorageTemperatureRange TSTG -55to150 °C Note： 1.RepetitiveRating: Pulsewidth limited bymaximum junction temperature 2.L=14.5mH,IAS=10.0A, VDD=50V,RG=25 Ω,StartingTJ=25°C 3.ISD ≤7.0A, di/dt≤300A/µs,VDD ≤BVDSS,StartingTJ=25°C Product Name Package Packaging BXP10N60P TO-220 Tube BXP10N60F TO-220F Tube

FEATURES

• RDSON≤0.9Ω @Vgs=10V,Id=5A
• ExcellentRDS(ON)andLowGateCharge
• Fastswitchingcapability
• Leadfreeproductisacquired General Description BXP10N60 is Bridgelux high voltage MOSFET family based on advanced planar DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch modepower supplies.

B r i d g e l u x W u X i R & D C O . , L T D BXP10N60 Bridgelux WuXi R&D CO., LTD Page 2 of 8 Version: 1.1 Halogen Free THERMAL CHARACTERISTICS Parameter Symbol Max. Unit BXP10N60P BXP10N60F ThermalResistance,Junction-to-Case RθJC 0.7 2.6 °C/W ThermalResistance,Junction-to-Ambient RθJA 62.5 122 °C/W ELECTRICAL CHARACTERISTICS（TJ=25℃,unlessotherwiseNoted） Parameter Symbol Test Condition Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-SourceBreakdownVoltage BVDSS VGS=0V,ID=250µA 600 V ZeroGateVoltageDrainCurrent IDSS VDS=600V,VGS=0V 1 uA VDS=480V,TC=125°C 100 uA Gate-BodyLeakageCurrent,Forward IGSS VGS=30V 100 nA Gate-BodyLeakageCurrent,Reverse VGS=-30V -100 nA BreakdownVoltageTemperature Coefficient △BVDSS/ △TJ ID=250µA 0.68 V/℃ ON CHARACTERISTICS GateThresholdVoltage VGS(TH) VDS=VGS,ID=250µA 2 4 V Drain-SourceOn-StateResistance RDS(ON) VGS=10V,ID=5A 0.68 0.9 Ω ForwardTransconductance(Note4) gFS VDS=50V,ID=5A 8.2 S DYNAMIC PARAMETERS InputCapacitance CISS VDS=25V,VGS=0V, f=1.0MHz 1302 pF OutputCapacitance COSS 135 pF ReverseTransferCapacitance CRSS 19 pF SWITCHING PARAMETERS Turn-ONDelayTime tD(ON) VDD=300V,ID=10A,VGS =10V,RG=10Ω (Note4,5) 62 ns Turn-ONRiseTime tR 102 ns Turn-OFFDelayTime tD(OFF) 200 ns Turn-OFFFall-Time tF 78 ns TotalGateCharge(Note5) QG VDS=480V,VGS=10V,ID =10A (Note4,5) 32 nC GateSourceCharge QGS 6.2 nC GateDrainCharge QGD 11 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-SourceDiodeForwardVoltage VSD IS=10A,VGS=0V 1.4 V DiodeContinuousForwardCurrent IS 10 A PulsedDrain-SourceCurrent ISM 40 A ReverseRecoveryTime tRR VGS=0V,ISD=10A di/dt=100A/µs(Note4,5) 450 ns ReverseRecoveryCharge QRR 4.46 uC Note： 4.PulseTest:Pulsewidth≤300µs,Dutycycle≤2% 5.Essentiallyindependentofoperatingtemperature

B r i d g e l u x W u X i R & D C O . , L T D BXP10N60 Bridgelux WuXi R&D CO., LTD Page 3 of 8 Version: 1.1 Halogen Free TYPICAL CHARACTERISTICS 100 100 Top 10V 6.5V 5.5V 1 1 0.1 0.1 0.1 1 Vds,Drain-to-Source Voltage(V) 10 2 4 6 8 10 Vgs,Gate-to-Source Voltage(V) Figure 1.TypicalOutput Characteristics Figure2.TypicalTransferCharacteristics Figure4.Diode ForwardVoltage versus Current Figure1. Typical Output Characteristics Figure2. Typical Transfer Characteristics Figure3. On-Resistance versus Drain Current Figure4. Diode forward voltage versus Current Figure5. Typical Capacitance versus VDS Figure6. Typical Gate Charge versus VGS Id,Drain-to-SourceCurrent(A) Id,Drain Current(A)Is,Reverse Drain Current(A)

B r i d g e l u x W u X i R & D C O . , L T D BXP10N60 Bridgelux WuXi R&D CO., LTD Page 4 of 8 Version: 1.1 Halogen Free 1.2 1.15 1.1 1.05 0.95 TYPICAL CHARACTERISTICS(Cont.) Figure7. BVDSS Variation with Temperature Figure8. On-Resistance Variation with Temperature Figure9. Maximum Safe Operating Area Figure9. Maximum Safe Operating Area BXP10N60P BXP10N60F Figure10. Maximum Continuous Drain Current versus Case Temperature BVDSS,(Normalized) Drain-to-Source Breakdown Voltage Id,Drain Current(A) Id,Drain Current(A)

B r i d g e l u x W u X i R & D C O . , L T D BXP10N60 Bridgelux WuXi R&D CO., LTD Page 5 of 8 Version: 1.1 Halogen Free TEST CIRCUITS AND WAVEFORMS

B r i d g e l u x W u X i R & D C O . , L T D BXP10N60 Bridgelux WuXi R&D CO., LTD Page 6 of 8 Version: 1.1 Halogen Free TEST CIRCUITS AND WAVEFORMS(Cont.)

B r i d g e l u x W u X i R & D C O . , L T D BXP10N60 Bridgelux WuXi R&D CO., LTD Page 7 of 8 Version: 1.1 Halogen Free

Revision history

5-Sep-2021 1.0 First release 7-Jan-2022 1.1 Update parameter

B r i d g e l u x W u X i R & D C O . , L T D BXP10N60 Bridgelux WuXi R&D CO., LTD Page 8 of 8 Version: 1.1 Halogen Free Disclaimers: Bridgelux WuXi has made reasonable commercial efforts to ensure that the information given in this data sheet is correct. However,it must clearly beunderstood that such informationis for guidance only anddoes notconstitute anyrepresentation orformpartofanyofferorcontract. For documents and material available from this data sheet, Bridgelux WuXi does not warrant or assume any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, product, technology or process disclosed hereunder. Bridgelux WuXi reserves the rights to at its own discretion to make any changes or improvements to this data sheet. Unless said data sheet is incorporated into the formal contract, anycustomer should not rely on the information as any specification or product parameters duly committed by Bridgelux WuXi. Customers are hereby advised to verify that the information contained herein is current and complete before the entering of any contract or acknowledgement of any purchase order. Accordingly, all products specified hereunder shall be sold subject to Bridgelux WuXi’s terms and conditions supplied at the time of order acknowledgement. Except where agreed upon by contractual agreement, testing of all parameters of each productisnotnecessarilyperformed. Bridgelux WuXi does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others.Reproductionofinformationcontainedhereinshallbeonlypermissibleifsuchreproductioniswithoutanymodification oralteration.Reproductionofthisinformationwithanyalterationisanunfairanddeceptivebusinesspractice.BridgeluxWuXi isnotresponsibleorliableforsuchaltereddocumentation. Resale of Bridgelux WuXi’s products with statements different from or beyond the parameters stated by Bridgelux WuXi for that product or service voids all express or implied warrantees for the associated Bridgelux WuXi’s product or service and is unfairanddeceptivebusinesspractice.BridgeluxWuXiisnotresponsibleorliableforanysuchstatements. Bridgelux WuXi’s products are not authorized for use as critical components in life support devices or systems without the expresswrittenapprovalofBridgeluxWuXi.Asusedherein: 1. Lifesupportdevicesorsystemsaredevicesor systemswhich,(a) areintendedforsurgicalimplant intothebody,or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use providedinthelabeling,canbereasonablyexpectedtoresultinasignificantinjurytotheuser. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expectedtocausethefailureofthelifesupportdeviceorsystem,ortoaffectitssafetyoreffectiveness.