BXC65R650 BRIDGELUX | Alldatasheet

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Technical content

B r i d g e l u x ( W u x i ) S e m i c o n d u c t o r C o . , L t d . BXC65R650 Bridgelux(Wuxi)Semiconductor Co., Ltd. Page 1 of 8 Version: 1.1 650V 7A N-Channel Super Junction Power MOSFET SYMBOL TO-251L TO-252 TO-220F ASSEMBLY MESSAGE ABSOLUTE MAXIMUM RATINGS (TC=25°Cunless otherwisenoted) Parameter Symbol Rating Unit BXC65R650U/D BXC65R650F Drain-SourceVoltage VDSS 650 V DrainCurrent Continuous(TC =25°C) ID 7 A Continuous(TC =100°C) 5.6 A DrainCurrent Pulsed(Note1) IDM 21 A Gate-SourceVoltage VGSS ±30 V AvalancheEnergy SinglePulse(Note2) EAS 120 mJ Repetitive(Note1) EAR 0.18 mJ AvalancheCurrent(Note1) IAR 1.2 A PeakDiodeRecoverydv/dt dv/dt 5 V/ns Power Dissipation(Note TC =25°C PD 63 32 W Derateabove25°C 0.5 0.26 W/°C MaximumJunctionTemperature TJ 150 °C StorageTemperatureRange TSTG -55to150 °C Note： 1.Limitedbymaximumjunctiontemperature,maximumdutycycleis0.75 2.L=4mH,VDD=50V,RG=25Ω,StartingTJ=25°C Product Name Package Packaging BXC65R650U TO-251L Tube BXC65R650D TO-252 Tube/Reel BXC65R650F TO-220F Tube

Applications

  • SwitchModePowerSupply (SMPS)
  • UninterruptiblePowerSupply(UPS)
  • PowerFactorCorrection(PFC)

FEATURES

  • RDSON≤0.65Ω @Vgs=10V,Id=3.5A
  • Excellent RDS(ON)andLowGate Charge
  • Fastswitchingcapability
  • Leadfreeproductisacquired

B r i d g e l u x ( W u x i ) S e m i c o n d u c t o r C o . , L t d . BXC65R650 Bridgelux(Wuxi)Semiconductor Co., Ltd. Page 2 of 8 Version: 1.1 THERMAL CHARACTERISTICS Parameter Symbol Max. Unit BXC65R650U/D BXC65R650F ThermalResistance,Junction-to-Case RθJC 2 4 °C/ W ThermalResistance,Junction-to-Ambient RθJA 62 68 °C/ W ELECTRICAL CHARACTERISTICS（TJ=25℃,unlessotherwiseNoted） Parameter Symbol Test Condition Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-SourceBreakdownVoltage BVDSS VGS=0V,ID=250µA 650 V ZeroGateVoltageDrainCurrent IDSS VDS=650V,VGS=0V 1 uA VDS=520V,TC=125°C 10 uA Gate-BodyLeakageCurrent,Forward IGSS VGS=30V 100 nA Gate-BodyLeakageCurrent,Reverse VGS=-30V -100 nA ON CHARACTERISTICS GateThresholdVoltage VGS(TH) VDS=VGS,ID=250µA 2.5 4.0 V Drain-SourceOn-StateResistance RDS(ON) VGS=10V,ID=3.5A 0.56 0.65 Ω DYNAMIC PARAMETERS InputCapacitance CISS VDS=100V,VGS=0V, f=1.0MHz 491 pF OutputCapacitance COSS 23 pF ReverseTransferCapacitance CRSS 0.65 pF SWITCHING PARAMETERS Turn-ONDelayTime tD(ON) VDD=400V,ID=3.5A,VGS =10V,RG=25Ω 11.6 ns Turn-ONRiseTime tR 23 ns Turn-OFFDelayTime tD(OFF) 53 ns Turn-OFFFall-Time tF 35.8 ns TotalGateCharge(Note5) QG VDS=520V,VGS=10V,ID =3.5A 13.3 nC GateSourceCharge QGS 2.8 nC GateDrainCharge QGD 4.7 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-SourceDiodeForwardVoltage VSD IF=3.5A,VGS=0V 0.85 V DiodeContinuousForwardCurrent IS 7 A PulsedDrain-SourceCurrent ISM 21 A ReverseRecoveryTime tRR VR=50V,IF=3.5A di/dt=100A/µs 201.4 ns ReverseRecoveryCharge QRR 1.3 uC

B r i d g e l u x ( W u x i ) S e m i c o n d u c t o r C o . , L t d . BXC65R650 Bridgelux(Wuxi)Semiconductor Co., Ltd. Page 3 of 8 Version: 1.1 TYPICAL CHARACTERISTICS VDS Drain-Source Voltage(v) VGS Gate-Source Voltage(v) Figure1. Typical Output Characteristics Figure2. Typical Transfer Characteristics ID Drain Current(A) VSD Source-Drain Voltage(v) Figure3. On-Resistance versus Drain Current Figure4. Diode forward voltage versus Current VDS Drain-Source Voltage(v) QG Gate-Charge(nC) Figure5. Typical Capacitance versus VDS Figure6. Typical Gate Charge versus VGS Id,Drain-to-SourceCurrent(A) Id,Drain Current(A) Rds(on),Drain-to-Source Resistance(Ω) Is,Reverse Drain Current(A) C,Capacitance(pF) VGS,Gate-to-Source Voltage(V)

B r i d g e l u x ( W u x i ) S e m i c o n d u c t o r C o . , L t d . BXC65R650 Bridgelux(Wuxi)Semiconductor Co., Ltd. Page 4 of 8 Version: 1.1 TYPICAL CHARACTERISTICS(Cont.) TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure7. BVDSS Variation with Temperature Figure8. On-Resistance Variation with Temperature VDS Drain-Source Voltage(v) VDS Drain-Source Voltage(v) Figure9. Maximum Safe Operating Area Figure9. Maximum Safe Operating Area BXC65R650U/D BXC65R650F TC, Case Temperature (°C) Figure10. Maximum Continuous Drain Current versus Case Temperature BVDSS,(Normalized) Drain-to-Source Breakdown Voltage(V) Rds(on),(Normalized) Drain-to-Source on Resistance Id,Drain Current(A) Id,Drain Current(A) ID,Drain Current(A)

B r i d g e l u x ( W u x i ) S e m i c o n d u c t o r C o . , L t d . BXC65R650 Bridgelux(Wuxi)Semiconductor Co., Ltd. Page 5 of 8 Version: 1.1 TEST CIRCUITS AND WAVEFORMS

B r i d g e l u x ( W u x i ) S e m i c o n d u c t o r C o . , L t d . BXC65R650 Bridgelux(Wuxi)Semiconductor Co., Ltd. Page 6 of 8 Version: 1.1 TEST CIRCUITS AND WAVEFORMS(Cont.)

B r i d g e l u x ( W u x i ) S e m i c o n d u c t o r C o . , L t d . BXC65R650 Bridgelux(Wuxi)Semiconductor Co., Ltd. Page 7 of 8 Version: 1.1

Revision history

3-Sep-2021 1.0 First release 6-Dec-2021 1.1 Update parameter

B r i d g e l u x ( W u x i ) S e m i c o n d u c t o r C o . , L t d . BXC65R650 Bridgelux(Wuxi)Semiconductor Co., Ltd. Page 8 of 8 Version: 1.1 Disclaimers: Bridgelux WuXi has made reasonable commercial efforts to ensure that the information given in this data sheet is correct. However,it mustclearlybe understoodthat suchinformationisforguidance onlyanddoesnotconstituteanyrepresentation orformpartofanyofferorcontract. For documents and material available from this data sheet, Bridgelux WuXi does not warrant or assume any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, product, technology or process disclosed hereunder. Bridgelux WuXi reserves the rights to at its own discretion to make any changes or improvements to this data sheet. Unless said data sheet isincorporated intothe formal contract, anycustomer should not relyon the informationas anyspecification or product parameters duly committed by Bridgelux WuXi. Customers are hereby advised to verify that the information contained herein is current and complete before the entering of any contract or acknowledgement of any purchase order. Accordingly, all products specified hereunder shall be sold subject to Bridgelux WuXi’s terms and conditions supplied at the time of order acknowledgement. Except where agreed upon by contractual agreement, testing of all parameters of each productisnotnecessarilyperformed. Bridgelux WuXi does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others.Reproductionofinformationcontainedhereinshallbeonlypermissibleifsuchreproductioniswithoutanymodification oralteration.Reproductionofthisinformationwithanyalterationisanunfairanddeceptivebusinesspractice.BridgeluxWuXi isnotresponsibleorliableforsuchaltereddocumentation. Resale of Bridgelux WuXi’s products with statements different from or beyond the parameters stated by Bridgelux WuXi for that product or service voids all express or implied warrantees for the associated Bridgelux WuXi’s product or service and is unfairanddeceptivebusinesspractice.BridgeluxWuXiisnotresponsibleorliableforanysuchstatements. Bridgelux WuXi’s products are not authorized for use as critical components in life support devices or systems without the expresswrittenapprovalofBridgeluxWuXi.Asusedherein: 1. Lifesupportdevicesorsystemsaredevicesorsystemswhich,(a)areintendedforsurgicalimplantintothebody,or(b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use providedinthelabeling,canbereasonablyexpectedtoresultinasignificantinjurytotheuser. 2. Acritical component is any component of a life support device or system whose failure to perform can be reasonably expectedtocausethefailureofthelifesupportdeviceorsystem,ortoaffectitssafetyoreffectiveness.