BTW69 STMICROELECTRONICS | Alldatasheet

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Technical content

BTW 69 (N) March 1995 SCR Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) BTW 69 BTW 69 N Tc=70°C Tc=75°C A IT(AV) Average on-state current (180 ° conduction angle,single phase circuit) BTW 69 BTW 69 N Tc=70°C Tc=75°C A ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C) tp=8.3 ms 525 A tp=10 ms 500 I2tI 2t value tp=10 ms 1250 A 2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 100 mA diG /dt = 1 A/µs

100 A/ µs

Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 230 °C TOP 3 (Plastic) K A G .HIGH SURGE CAPABILITY .HIGH ON-STATE CURRENT .HIGH STABILITY AND RELIABILITY .BTW 69 Serie : INSULATED VOLTAGE = 2500V (RMS) (UL RECOGNIZED : E81734)

DESCRIPTION

Symbol Parameter BTW 69 BTW 69 / BTW 69 N Unit 200 400 600 800 1000 1200 VDRM VRRM Repetitive peak off-state voltage Tj = 125°C 200 400 600 800 1000 1200 V ABSOLUTE RATINGS (limiting values)

FEATURES

The BTW 69 (N) Family of Silicon Controlled Recti- fiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load.

GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Junction to ambient 50 °C/W Rth (j-c) DC Junction to case for DC BTW 69 0.9 °C/W BTW 69 N 0.8 Symbol Test Conditions Value Unit BTW 69 BTW 69 N IGT VD =12V (DC) R L=33Ω Tj=25°C MAX 80 mA VGT VD =12V (DC) R L=33Ω Tj=25°C MAX 1.5 V VGD VD =V DRM R L=3.3kΩ Tj= 125°C MIN 0.2 V tgt V D =V DRM IG = 200mA dIG /dt = 1.5A/µs Tj=25°C TYP 2 µs IL IG = 1.2 IGT Tj=25°C TYP 50 mA IH IT= 500mA gate open Tj=25 °C MAX 150 mA VTM BTW 69 ITM= 100A BTW 69 N ITM = 110A tp= 380 µs Tj=25°C MAX 1.9 2.0 V IDRM IRRM VDRM Rated VRRM Rated Tj=25°C MAX 0.02 mA Tj= 125°C6 dV/dt Linear slope up to VD =67%V DRM gate open VDRM ≤ 800V VDRM ≥ 1000V Tj= 125°C MIN 500 250 V/µs tq V D =67%V DRM ITM = 110A V R = 75V dITM /dt=30 A/µsd V D /dt= 20V/µs Tj= 125°C TYP 100 µs PG (AV)=1 W P GM = 40W (tp = 20µs) I FGM = 8A (tp = 20µs) V RGM =5 V .

ELECTRICAL CHARACTERISTICS

BTW 69 (N)

Fig.3 : Maximum average power dissipation versus average on-state current (BTW 69 N). Fig.4 :Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTW 69 N). Fig.1 : Maximum average power dissipation versus average on-state current (BTW 69). Fig.2 :Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTW 69). Package I T(RMS) VDRM /V RRM Sensitivity Specification A V BTW BTW 69 (Insulated) 50 200 X 400 X 600 X 800 X 1000 X 1200 X BTW 69 N (Uninsulated) 55 600 X 800 X 1000 X 1200 X BTW 69 (N)

Fig.8 :Relative variation of gate trigger current versus junction temperature. Fig.9 : Non repetitive surge peak on-state current versus number of cycles. Fig.5 : Average on-state current versus case temperature (BTW 69). 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0.01 0.10 1.00 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig.7 :Relative variation of thermal impedance versus pulse duration. Fig.6 : Average on-state current versus case temperature (BTW 69 N). Fig.10 :Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10 ms, and corresponding value of I2t. BTW 69 (N)

Fig11 :On-state characteristics (maximum values). Cooling method : C Marking : type number Weight : 4.7 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. H R4 . 6 C A G D B P NN L M JI REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 15.10 15.50 0.594 0.611 B 20.70 21.10 0.814 0.831 C 14.30 15.60 0.561 0.615 D 16.10 16.50 0.632 0.650 G 3.40 - 0.133 - H 4.40 4.60 0.173 0.182 I 4.08 4.17 0.161 0.164 J 1.45 1.55 0.057 0.062 L 0.50 0.70 0.019 0.028 M 2.70 2.90 0.106 0.115 N 5.40 5.65 0.212 0.223 P 1.20 1.40 0.047 0.056 PACKAGE MECHANICAL DATA TOP 3 Plastic Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. BTW 69 (N)