BTW69-200N STMICROELECTRONICS | Alldatasheet

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meee lllttti(‘(‘é mM 7 7 SGS-THOMSON # WICROELECTRONICS BTW69-200N — 1200N S G S-THOMSON THYRISTORS » GLASS PASSIVATED CHIP a HIGH STABILITY AND RELIABILITY a HIGH SURGE CAPABILITY = HIGH ON-STATE CURRENT OO = EASY MOUNTING ON HEATSINK y CLS TOP 3 DESCRIPTION (Plastic) General purpose SCR suited for power supplies up to 400 Hz on resistive or inductive loads. ABSOLUTE RATINGS (limiting values) BTW69- BTW69- | svmoot | Paramore noo Baonloconzoon | ot | RMS on-state Current (1) [te=7oe [5A Tenvore | Itsm Non Repetitive Surge Peak on-state t=83 ms A [| Fivaue tor Fusing ——=——~idt=tome | 1260 | a00 | We | Critical Rate of Rise of on-state Current (3) [| t00—“C—*™té‘C;CSSé*SéCAs”‘*S Tstg Storage and Operating Junction Temperature Range — 40 to 125 Re T, = 40 to 125 Ke] Parameter [200N | 400N | 600N | 200N mesreneranrny | ae | fon os [oe ae] VaRM (1) Single phase circuit, 180° conduction angle. (2) Half sine wave. (3) a= 800 mA _— dic/dt = 1 Ajus. (4) T, = 125 °C. THERMAL RESISTANCES | Symbol [Parameter Tale Unit Junction-case for D.C. 0.87 “c/w Contact (case to heatsink) 0.20 ee February 1989 1/5 121

GATE CHARACTERISTICS (maximum values) ~ 1-25-17 Pen = 50 W (tp = 10 pts) !Fam = 2 A (tp = 10 ps) Vrem = 5 V Paavyy=1W Vram = 15 V (tp = 10 ps) oe ee eee ELECTRICAL CHARACTERISTICS ~~ § G S=THOMSON | Symbol _| Test Conditions Min. Typ. | Max. | Unit | ler T= 25°C Vp =12V Ri =33.2 mA Pulse Duration > 20 us Ver Tj = 25°C Vp =12V RL =33.Q 7 Pulse Duration > 20 ps Ie Tj) = 25°C Vp =12V Ig = 160 mA mA Pulse Duration > 20 ys Ti= 25°C bw = 110A tp=toms [| | 2 | Tec [| ts Vani: Specified sas | [| 002 | ma Tero | | ts Tj = 25°C Vo =Vorm Ir =110A 2 us Ig = 200 mA dic/dt = 0.2 A/us Tj = 125 °C lp=110A Va =75V us Vp =67 % Vorm di/dt = 30 A/us dv/dt = 20 V/us Gate Open dvidt® | Tj = 125 °C Gate Open Voamse00v | 500 | | (| Was Linear Slope up to Vo = 67 % Vorm Vorm = 1000 V | 20] | | * For higher guaranteed values, please consult us. PACKAGE MECHANICAL DATA : TOP 3 Plastic 152 4,4 R46 Br |_| 1,45 _ » / | 42 1] 1,55 CEN LX OR) SS i 3.4 min, @12 0.5 min ia 55 5.5 | 27 = 2,9 kK AG Cooling method : by conduction (method C) Marking : type number Weight : 5 g. 2l5 ae SSS STA SGS-THOMSON __-— STM mcxomectnax-c8 122

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» POE g m= HAT e Toe AP Szill UIE gee e ott itt Z. PAL PTA Bo BEER ud | Ad 4G fool c Vio = 85 OV % as 7, ot 4 200 0 4 2 3 4 5 6 7 4 2 5 10 INSTANTANEQUS ON-STATE VOLTAGE, V7 (V) PULSE BASE WIDTH, t (ms) FIG.S — WAXIMUM ON-STATE CONDUCTION FI6.8 — NON REPETITIVE SUB-CYCLE SURGE CHARACTERISTIC (Ty = 128 °C). Ov STATE CURRENT ne 12 RATING I” .

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eee | Bs soo LAE tI vn < ‘200 a etieecer Vory > $000 V 2 oxo LIN a TTT 2 ee Be soo LTT PT ST @ I TTT | ra 6 gt LIU PTT 4 40 102 103 NUMBER OF CYCLES {at 50 Hz) FIG.7 - NON REPETITIVE SURGE PEAK ON-STATE CURRENT VERSUS NUMBER OF CYCLES.