BTW67 STMICROELECTRONICS | Alldatasheet

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Technical content

April 2001 - Ed: 4 MAIN FEATURES:

DESCRIPTION

Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (file ref: E81734). Symbol Value Unit IT(RMS) 50 A V DRM /VRRM 6 0 0t o1 2 0 0 V IGT 80 mA ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) RD91 Tc = 70°C 50 A TOP3 Ins. Tc = 75°C IT(AV) Average on-state current (180° conduction angle) RD91 Tc = 70°C 32 A TOP3 Ins. Tc = 75°C ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C 610 A tp = 10 ms 580 I²tI ²t Value for fusing Tj = 25°C 1680 A2S dI/dt Critical rate of rise of on-state current IG = 2xI GT ,t r≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 8 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range -4 0t o+1 5 0 -4 0t o+1 2 5 °C VRGM Maximum peak reverse gate voltage 5 V RD91 (BTW67) TOP3 (BTW69)

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) THERMAL RESISTANCES PRODUCT SELECTOR

ORDERING INFORMATION

Note:x x x=v o l t a g e Symbol Test Conditions Value Unit IGT VD =1 2V R L =3 3Ω MIN. 8 mAMAX. 80 VGT MAX. 1.3 V VGD VD =V DRM R L =3 . 3kΩ Tj = 125°C MIN. 0.2 V IH IT =5 0 0m A G a t eo p e n MAX. 150 mA IL IG =1 . 2IGT MAX. 200 mA dV/dt V D =6 7 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs VTM ITM =1 0 0A t p=3 8 0µ s Tj = 25°C MAX. 1.9 V Vt0 Threshold voltage Tj = 125°C MAX. 1.0 V R d Dynamic resistance Tj = 125°C MAX. 8.5 m Ω IDRM IRRM VDRM =V RRM Tj = 25°C MAX. 10 µA Tj = 125°C 5 mA Symbol Parameter Value Unit R th(j-c) Junction to case (DC) RD91 (Insulated) 1.0 °C/W TOP3 Insulated 0.9 R th(j-a) Junction to ambient TOP3 Insulated 50 °C/W Part Number Voltage (xxx) Sensitivity Package

600 V 800 V 1200 V

BTW67-xxx X X X 80 mA RD91 BTW69-xxx X X X 80 mA TOP3 Ins. Part Number Marking Weight Base Quantity Packing mode BTW67-xxx BTW67xxx 20.0 g 25 Bulk BTW69-xxx BTW69xxx 4.5 g 120 Bulk

Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2:Average and D.C. on-state current versus case temperature. Fig. 3:Relative variation of thermal impedance versus pulse duration. Fig. 4:Relative variation of gate trigger current, holding current and latching current versus junction temperature. Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t.

RD91 (Plastic) Fig. 7: On-state characteristics (maximum values). REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 40.00 1.575 A1 29.90 30.30 1.177 1.193 A2 22.00 0.867 B 27.00 1.063 B1 13.50 16.50 0.531 0.650 B2 24.00 0.945 C 14.00 0.551 C1 3.50 0.138 C2 1.95 3.00 0.077 0.118 E3 0.70 0.90 0.027 0.035 F 4.00 4.50 0.157 0.177 I 11.20 13.60 0.441 0.535 L1 3.10 3.50 0.122 0.138 L2 1.70 1.90 0.067 0.075 N1 33° 43° 33° 43° N2 28° 38° 28° 38°

TOP3 Ins.(Plastic) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia-Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com