BTT6200-4ESA

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Technical content

PROFET™+ 24V BTT6200-4ESA Feature list

• Quad channel device
• Very low stand-by current
• 3.3 V and 5 V compatible logic inputs
• Electrostatic discharge protection (ESD)
• Optimized electromagnetic compatibility
• Logic ground independent from load ground
• Very low power DMOS leakage current in OFF state
• Green product (RoHS compliant) Potential applications
• Suitable for resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
• Most suitable for loads with high inrush current, such as lamps
• Suitable for 12 V and 24 V trucks and transportation systems CVDD CVS A/D I/O I/O GND Micro controller DEN DSEL0 GND VS RSENSE RDEN RDSEL RDSEL DSEL1 RIS RIN I/O RIN RIN RIN OUT3 OUT4 IN0 IN1 IN2 IN3 VDD I/O I/O I/O I/O RLED OUT VS GND Voltage Regulator Z E.C.U. VBAT OUT0 OUT1 OUT2 OUT3 IS D R5W LED Relay RPDRPD RPD RPD CSENSE RGND COUT COUT COUT COUT ROL Page-1 Figure 1 Application Diagram with BTT6200-4ESA Product Type Package Marking BTT6200-4ESA PG-TSDSO-24 BTT62004ESA Datasheet Please read the Important Notice and Warnings at the end of this document Rev. 1.00 www.infineon.com 2019-03-09

The BTT6200-4ESA is a 200 mΩ quad channel Smart High-Side Power Switch, embedded in a PG-TSDSO-24 package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment. Table 1 Product summary Parameter Symbol Value Operating voltage range VS(OP) 5 V to 36 V Maximum supply voltage VS(LD) 65 V Maximum ON state resistance at TJ = 150°C per channel RDS(ON) 400 mΩ Nominal load current (one channel active) IL(NOM)1 1.5 A Nominal load current (all channels active) IL(NOM)2 1 A Typical current sense ratio kILIS 300 Minimum current limitation IL5(SC) 9 A Maximum standby current with load at TJ = 25°C IS(OFF) 500 nA Diagnostic functions

• Proportional load current sense multiplexed for the 4 channels
• Open load detection in ON and OFF
• Short circuit to battery and ground indication
• Overtemperature switch off detection
• Stable diagnostic signal during short circuit
• Enhanced kILIS dependency with temperature and load current Protection functions
• Stable behavior during undervoltage
• Reverse polarity protection with external components
• Secure load turn-off during logic ground disconnection with external components
• Overtemperature protection with latch
• Overvoltage protection with external components
• Enhanced short circuit operation Product validation Qualified for Automotive Applications. Product validation according to AEC-Q100/101. PROFET™+ 24V BTT6200-4ESA Product summary Datasheet 2 Rev. 1.00 2019-03-09

PROFET™+ 24V BTT6200-4ESA Table of contents Datasheet 3 Rev. 1.00 2019-03-09

PROFET™+ 24V BTT6200-4ESA Table of contents Datasheet 4 Rev. 1.00 2019-03-09

1 Description

The BTT6200-4ESA is a 200 mΩ quad channel Smart High-Side Power Switch, embedded in a PG-TSDSO-24 package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment. PROFET™+ 24V BTT6200-4ESA

Description

Datasheet 5 Rev. 1.00 2019-03-09

2 Block diagram reference

Block diagram DxS.vsd Channel 0 V S OUT 0 IN0 T driver logic gate control charge pump load current sense and open load detection over temperature clamp for inductive load over current switch limit forward voltage drop detection voltage sensor GND ESD protection IS DEN Channel 1 IN1 Control and protection circuit equivalent to channel 0 T V S OUT 1 internal power supply Channel 2 Control and protection circuit equivalent to channel 0 T OUT 2 Channel 3 Control and protection circuit equivalent to channel 0 T OUT 3 IN2 IN3 DSEL0 DSEL1 Figure 2 Block diagram for BTT6200-4ESA PROFET™+ 24V BTT6200-4ESA Block diagram reference Datasheet 6 Rev. 1.00 2019-03-09

3 Pin configuration

3.1 Pin assignment

PG-TSDSO-24-21_Pinout.vsd IS DSEL0 IN2 IN3 DSEL1 NC NC IN1 DEN NC OUT0 NC NC NC OUT1 NC OUT2 NC NC NC OUT3 IN0 NC GND Figure 3 Pin configuration

3.2 Pin definitions and functions

Table 2 Pin definitions and functions Pin Symbol Function 18, 19 , 21, 22, 23 NC Not Connected; No internal connection to the chip

2 IN0 INput channel 0; Input signal for channel 0 activation

4 GND GrouND; Ground connection

5 IN1 INput channel 1; Input signal for channel 1 activation

6 DEN Diagnostic ENable; Digital signal to enable/disable the diagnosis of

7 IS Sense; Sense current of the selected channel

8 DSEL0 Diagnostic SELection; Digital signal to select the channel to be

9 IN2 INput channel 2; Input signal for channel 2 activation

10 IN3 INput channel 3; Input signal for channel 3 activation

11 DSEL1 Diagnostic SELection; Digital signal to select the channel to be

13 OUT3 OUTput 3; Protected high side power output channel 3

17 OUT2 OUTput 2; Protected high side power output channel 2

20 OUT1 OUTput 1; Protected high side power output channel 1

PROFET™+ 24V BTT6200-4ESA Pin configuration Datasheet 7 Rev. 1.00 2019-03-09

Table 2 Pin definitions and functions (continued) Pin Symbol Function

24 OUT0 OUTput 0; Protected high side power output channel 0

Cooling tab VS Voltage Supply; Battery voltage

3.3 Voltage and current definition

Figure 4 shows all terms used in this data sheet, with associated convention for positive values. VS IN0 IN1 IN2 IN3 IS GND OUT0 OUT1 IIN0 IIN1 IIN2 IIN3 IIS VS VIN0 VIN1 VIN2 VIN3 VIS I S IGND VDS0 VDS1 VOUT0 IOUT1 IOUT0 voltage and current convention.vsd VDEN DEN IDEN VDSEL0 DSEL0 IDSEL0 VDSEL1 DSEL1 IDSEL1 VDS2 VDS3 IOUT2 OUT2 OUT3 VOUT1 VOUT2 VOUT3 IOUT3 Figure 4 Voltage and current definition PROFET™+ 24V BTT6200-4ESA Pin configuration Datasheet 8 Rev. 1.00 2019-03-09

4 Electrical characteristics and parameters

4.1 Absolute maximum ratings

Table 3 Absolute maximum ratings 1) TJ = -40°C to 150°C; (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Supply voltages Supply voltage VS -0.3 – 48 V – P_4.1.1 Reverse polarity voltage -VS(REV) 0 – 28 V t < 2 min TA = 25°C RL ≥ 47 Ω ZGND = Diode +27 Ω P_4.1.2 Supply voltage for short circuit protection VBAT(SC) 0 – 36 V RSupply = 10 mΩ LSupply = 5 µH RECU= 20 mΩ RCable= 16 mΩ/m LCable= 1 µH/m, l = 0 or 5 m See Chapter 6 and Figure 29 P_4.1.3 Supply voltage for Load dump protection VS(LD) – – 65 V 2) RI = 2 Ω RL = 47 Ω P_4.1.12 Short circuit capability Permanent short circuit IN pin toggles nRSC1 – – 100 k cycles 3)_ P_4.1.4 Input pins Voltage at INPUT pins VIN -0.3 – 6 V – t < 2 min P_4.1.13 Current through INPUT pins IIN -2 – 2 mA – P_4.1.14 Voltage at DEN pin VDEN -0.3 – 6 V – t < 2 min P_4.1.15 Current through DEN pin IDEN -2 – 2 mA – P_4.1.16 1 Not subject to production test. Specified by design. 2 VS(LD) is setup without the DUT connected to the generator per ISO 7637-1. 3 Threshold limit for short circuit failures: 100 ppm. Please refer to the legal disclaimer for short-circuit capability at the end of this document. PROFET™+ 24V BTT6200-4ESA Electrical characteristics and parameters Datasheet 9 Rev. 1.00 2019-03-09

Table 3 Absolute maximum ratings 1) (continued) TJ = -40°C to 150°C; (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Voltage at DSEL pin VDSEL -0.3 – 6 V – t < 2 min P_4.1.17 Current through DSEL pin IDSEL -2 – 2 mA – P_4.1.18 Sense pin Voltage at IS pin VIS -0.3 – VS V – P_4.1.19 Current through IS pin IIS -25 – 50 mA – P_4.1.20 Power stage Load current | IL | – – IL(LIM) A – P_4.1.21 Power dissipation (DC) PTOT – – 1.8 W TA = 85°C TJ < 150°C P_4.1.22 Maximum energy dissipation Single pulse (one channel) EAS – – 20 mJ IL(0) = 1 A TJ(0) = 150°C VS = 28 V P_4.1.23 Voltage at power transistor VDS – – 65 V – P_4.1.26 Currents Current through ground pin I GND -20 -150 – 20 mA – t < 2 min P_4.1.27 Temperatures Junction temperature TJ -40 – 150 °C – P_4.1.28 Storage temperature TSTG -55 – 150 °C – P_4.1.30 ESD susceptibility ESD susceptibility (all pins) VESD -2 – 2 kV 4) HBM P_4.1.31 ESD susceptibility OUT pin vs. GND and VS connected VESD -4 – 4 kV 4) HBM P_4.1.32 ESD susceptibility VESD -500 – 500 V 5) CDM P_4.1.33 ESD susceptibility pin (corner pins) VESD -750 – 750 V 5) CDM P_4.1.34 Notes: 1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 1 Not subject to production test. Specified by design.

4 ESD susceptibility Human Body Model "HBM" according to AEC Q100-002

5 ESD susceptibility Charged Device Model "CDM" according to AEC Q100-011

PROFET™+ 24V BTT6200-4ESA Electrical characteristics and parameters Datasheet 10 Rev. 1.00 2019-03-09

1. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation.

4.2 Functional range

TJ = -40°C to 150°C; (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Nominal operating voltage VNOM 8 28 36 V – P_4.2.1 Extended operating voltage VS(OP) 5 – 48 V 7) VIN = 4.5 V RL = 47 Ω VDS < 0.5 V P_4.2.2 Minimum functional supply voltage VS(OP)_MIN 3.8 4.3 5 V 6) VIN = 4.5 V RL = 47 Ω From IOUT = 0 A to VDS < 0.5 V; see Figure 16 P_4.2.3 Undervoltage shutdown VS(UV) 3 3.5 4.1 V 6) VIN = 4.5 V VDEN = 0 V RL = 47 Ω From VDS < 1 V; to IOUT = 0 A See Chapter 9.1 and Figure 16 P_4.2.4 Undervoltage shutdown hysteresis VS(UV)_HYS – 850 – mV 7) – P_4.2.13 Operating current One channel active IGND_1 – 2 4 mA VIN = 5.5 V VDEN = 5.5 V Device in RDS(ON) VS = 36 V See Chapter 9.1 P_4.2.5 7 Not subject to production test. Specified by design. 6 Test at TJ = -40°C only. PROFET™+ 24V BTT6200-4ESA Electrical characteristics and parameters Datasheet 11 Rev. 1.00 2019-03-09

Table 4 Functional range (continued) TJ = -40°C to 150°C; (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Operating current All channels active IGND_4 – 6 9 mA VIN = 5.5 V VDEN = 5.5 V Device in RDS(ON) VS = 36 V See Chapter 9.1 P_4.2.6 Standby current for whole device with load (ambient) IS(OFF) – 0.1 0.5 µA 6) VS = 36 V VOUT = 0 V VIN floating VDEN floating TJ ≤ 85 °C P_4.2.7 Maximum standby current for whole device with load IS(OFF)_150 – – 20 µA VS = 36 V VOUT = 0 V VIN floating VDEN floating TJ = 150 °C P_4.2.10 Standby current for whole device with load, diagnostic active IS(OFF_DEN) – 0.6 – mA 7) VS = 36 V VOUT = 0 V VIN floating VDEN = 5.5 V P_4.2.8 Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table.

4.3 Thermal resistance

Table 5 Thermal resistance Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Junction to case RthJC – 3 – K/W 8) P_4.3.1 Junction to ambient All channels active RthJA – 28 – K/W 8)9) P_4.3.2 6 Test at TJ = -40°C only. 7 Not subject to production test. Specified by design. 8 Not subject to production test. Specified by design. PROFET™+ 24V BTT6200-4ESA Electrical characteristics and parameters Datasheet 12 Rev. 1.00 2019-03-09

4.3.1 PCB set-up

1.5mm 70µm 35µm 0.3mm PCB 2s2p.vsd Figure 5 2s2p PCB cross section Figure 6 PC board top and bottom view for thermal simulation with 600 mm 2 cooling area 9 Specified Rthja value is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board with 1 W power dissipation equally dissipated for all channel at TA = 105°C ; The product (chip + package) was simulated on a 76.4 mm x 114.3 mm x 1.5 mm board with 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm Cu). Where applicable, a thermal via array under the exposed pad contacts the first inner copper layer. Please refer to Figure 5 . PROFET™+ 24V BTT6200-4ESA Electrical characteristics and parameters Datasheet 13 Rev. 1.00 2019-03-09

4.3.2 Thermal impedance

0,1 100 0,0001 0,001 0,01 0,1 1 10 100 1000 ZthJA (K/W) TAMBIENT = 105°C Time (s) BTT6200-4ESA 2s2p 1s0p - 600 mm² 1s0p - 300 mm² 1s0p - footprint Figure 7 Typical thermal impedance. 2s2p PCB set-up according to Figure 5 100 110 120 0 100 200 300 400 500 600 RthJA (K/W) Cooling area (mm²) BTT6200-4ESA 1s0p - Tambient = 105°C Figure 8 Typical thermal resistance. PCB set-up 1s0p PROFET™+ 24V BTT6200-4ESA Electrical characteristics and parameters Datasheet 14 Rev. 1.00 2019-03-09

5 Power stage

The power stages are built using an N-channel vertical power MOSFET (DMOS) with charge pump.

5.1 Output ON-state resistance

The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 9 shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The behavior in reverse polarity is described in Chapter 6.4. Figure 9 Typical ON-state resistance A high signal at the input pin (see Chapter 8) causes the power DMOS to switch ON with a dedicated slope, which is optimized in terms of EMC emission.

5.2 Turn ON/OFF characteristics with resistive load

Figure 10 shows the typical timing when switching a resistive load. IN t VOUT tON tON_delay tOFF 90% VS 10% VS VIN_H VIN_L t Switching times.vsd tOFF_delay 30% VS 70% VS dV/dt ON dV/dt OFF Figure 10 Switching a resistive load timing PROFET™+ 24V BTT6200-4ESA Power stage Datasheet 15 Rev. 1.00 2019-03-09

5.3 Inductive load

5.3.1 Output clamping

When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential, because the inductance intends to continue driving the current. To prevent the destruction of the device by avalanche due to high voltages, there is a voltage clamp mechanism ZDS(AZ) implemented that limits negative output voltage to a certain level (VS - VDS(AZ)). Please refer to Figure 11 and Figure 12 for details. Nevertheless, the maximum allowed load inductance is limited. V BAT V OUT IL L, R L VS OUTx V DS LOGIC INx V IN Output_clamp.vsd Z DS(AZ) GND Z GND Figure 11 Output clamp IN VOUT IL VS VS-VDS(AZ) t t t Switching an inductance.vsd Figure 12 Switching an inductive load timing PROFET™+ 24V BTT6200-4ESA Power stage Datasheet 16 Rev. 1.00 2019-03-09

5.3.2 Maximum load inductance

During demagnetization of inductive loads, energy has to be dissipated in the BTT6200-4ESA. This energy can be calculated with following equation: E = VDS AZ ⋅ L RL ⋅ VS −VDS AZ RL ⋅ ln 1 − RL ⋅ IL VS −VDS AZ + IL Equation 1 The following equation simplifies under the assumption of RL = 0 Ω. E = 1 2 ⋅ L ⋅ I2 ⋅ 1 − VS VS −VDS AZ Equation 2 The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 13 for the maximum allowed energy dissipation as a function of the load current. Figure 13 Maximum energy dissipation single pulse, TJ_START = 150°C; VS = 28 V

5.4 Inverse current capability

In case of inverse current, meaning a voltage VINV at the OUTput higher than the supply voltage VS, a current IINV will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 14). The output stage follows the state of the IN pin, except if the IN pin goes from OFF to ON during inverse. In that particular case, the output stage is kept OFF until the inverse current disappears. Nevertheless, the current IINV should not be higher than IL(INV). If the channel is OFF, the diagnostic will detect an open load at OFF. If the affected channel is ON, the diagnostic will detect open load at ON (the overtemperature signal is inhibited). At the appearance of VINV, a parasitic diagnostic can be observed. After, the diagnosis is valid and reflects the output state. At VINV vanishing, the diagnosis is valid and reflects the output state. During inverse current, no protection functions are available. PROFET™+ 24V BTT6200-4ESA Power stage Datasheet 17 Rev. 1.00 2019-03-09

IL(INV) inverse current.vsd VINVINV Comp. Gate driver Device logic GND ZGND Figure 14 Inverse current circuitry

5.5 Electrical characteristics - power stage

Table 6 Electrical characteristics: Power stage VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified). Typical values are given at VS = 28 V, TJ = 25°C Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. ON-state resistance per channel RDS(ON)_150 300 360 400 mΩ IL = IL4 = 1 A VIN = 4.5 V TJ = 150°C See Figure 9 P_5.5.1 ON-state resistance per channel RDS(ON)_25 – 200 – mΩ 10)TJ = 25 °C P_5.5.21 Nominal load current One channel active IL(NOM)1 – 1.5 – A 10) TA = 85°C TJ < 150°C P_5.5.2 Nominal load current All channels active IL(NOM)2 – 1 – A P_5.5.3 Output voltage drop limitation at small load currents VDS(NL) – 10 22 mV IL = IL0 = 25 mA See Chapter 9.3 P_5.5.4 Drain to source clamping voltage VDS(AZ) = [VS - VOUT] VDS(AZ) 65 70 75 V IDS = 5 mA See Figure 12 See Chapter 9.1 P_5.5.5 Output leakage current per channel TJ ≤ 85 °C IL(OFF) – 0.1 0.5 µA 11) VIN floating VOUT = 0 V TJ ≤ 85°C P_5.5.6 10 Not subject to production test, specified by design.

11 Test at TJ = -40°C only

PROFET™+ 24V BTT6200-4ESA Power stage Datasheet 18 Rev. 1.00 2019-03-09

Table 6 Electrical characteristics: Power stage (continued) VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified). Typical values are given at VS = 28 V, TJ = 25°C Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Output leakage current per channel TJ = 150 °C IL(OFF)_150 – 1 5 µA VIN floating VOUT = 0 V TJ = 150°C P_5.5.8 Inverse current capability IL(INV) – 1 – A 10)VS< VOUTX See Figure 14 P_5.5.9 Slew rate 30% to 70% VS dV/dtON 0.3 0.8 1.3 V/µs RL = 47 Ω VS = 28 V See Figure 10 See Chapter 9.1 P_5.5.11 Slew rate 70% to 30% VS Slew rate matching dV/dtON - dV/dtOFF ΔdV/dt -0.15 0 0.15 V/µs P_5.5.13 Turn-ON time to VOUT = 90% VS tON 20 70 150 µs P_5.5.14 Turn-OFF time to VOUT = 10% VS tOFF 20 70 150 µs P_5.5.15 Turn-ON / OFF matching tOFF - tON ΔtSW -50 0 50 µs P_5.5.16 Turn-ON time to VOUT = 10% VS tON_delay – 35 70 µs P_5.5.17 Turn-OFF time to VOUT = 90% VS tOFF_delay – 35 70 µs P_5.5.18 Switch ON energy EON – 190 – µJ 10) RL = 47 Ω VOUT = 90% VS VS = 36 V See Chapter 9.1 P_5.5.19 Switch OFF energy EOFF – 210 – µJ 10) RL = 47 Ω VOUT = 10% VS VS = 36 V See Chapter 9.1 P_5.5.20 10 Not subject to production test, specified by design. PROFET™+ 24V BTT6200-4ESA Power stage Datasheet 19 Rev. 1.00 2019-03-09

6 Protection functions

The device provides integrated protection functions. These functions are designed to prevent the destruction of the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are designed for neither continuous nor repetitive operation.

6.1 Loss of ground protection

In case of loss of the module ground and the load remains connected to ground, the device protects itself by automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN pins. In case of loss of device ground, it’s recommended to use input resistors between the microcontroller and the BTT6200-4ESA to ensure switching OFF of channels. In case of loss of module or device ground, a current (IOUT(GND)) can flow out of the DMOS. Figure 15 sketches the situation. ZGND is recommended to be a resistor in series to a diode . INx DEN IS ZD ESD GND OUTx VS VBATZD(AZ) LOGIC DSEL1 Loss of ground protection.vsd IOUT(GND) ZDS(AZ) RIN RDEN RDSEL RSENSE RIS ZIS(AZ) ZGND RDSEL DSEL0 IS Figure 15 Loss of ground protection with external components

6.2 Undervoltage protection

Between VS(UV) and VS(OP), the undervoltage mechanism is triggered. VS(OP) represents the minimum voltage where the switching ON and OFF can takes place. VS(UV) represents the minimum voltage the switch can hold ON. If the supply voltage is below the undervoltage mechanism VS(UV), the device is OFF (turns OFF). As soon as the supply voltage is above the undervoltage mechanism VS(OP), then the device can be switched ON. When the switch is ON, protection functions are operational. Nevertheless, the diagnosis is not guaranteed until VS is in the VNOM range. Figure 16 illustrates the undervoltage mechanism. PROFET™+ 24V BTT6200-4ESA Protection functions Datasheet 20 Rev. 1.00 2019-03-09

undervoltage behavior.vsd VOUT VS(OP)VS(UV) VS Figure 16 Undervoltage behavior

6.3 Overvoltage protection

There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism operates properly in the application, the current in the Zener diode has to be limited by a ground resistor. Figure 17 shows a typical application to withstand overvoltage issues. In case of supply voltage higher than VS(AZ), the power transistor switches ON and in addition the voltage across the logic section is clamped. As a result, the internal ground potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin INx, DSELx, and DEN rises almost to that potential, depending on the impedance of the connected circuitry. In the case the device was ON, prior to overvoltage, the BTT6200-4ESA remains ON. In the case the BTT6200-4ESA was OFF, prior to overvoltage, the power transistor can be activated. In the case the supply voltage is in above VBAT(SC) and below VDS(AZ), the output transistor is still operational and follows the input. If at least one channel is in the ON state, parameters are no longer guaranteed and lifetime is reduced compared to the nominal supply voltage range. This especially impacts the short circuit robustness, as well as the maximum energy EAS capability. ZGND is recommended to be a resistor in series to a diode. PROFET™+ 24V BTT6200-4ESA Protection functions Datasheet 21 Rev. 1.00 2019-03-09

Overvoltage protection.vsd ISOV INx DEN IS ZD ESD GND OUTx VS VBATZD(AZ) LOGIC DSEL1 ZDS(AZ) RIN RDEN RDSEL RSENSE ZIS(AZ) RDSEL DSEL0 ZGNDRIS Figure 17 Overvoltage protection with external components

6.4 Reverse polarity protection

In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current in this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the logic pins has to be limited to the maximum current described in Chapter 4.1 with an external resistor. Figure 18 shows a typical application. RGND resistor is used to limit the current in the Zener protection of the device. Resistors RDSEL, RDEN, and RIN are used to limit the current in the logic of the device and in the ESD protection stage. RSENSE is used to limit the current in the sense transistor which behaves as a diode. The recommended value for RDEN = RDSEL = RIN = RSENSE = 10 kΩ. It is recommended to use a resistor in series to a diode in the ground path. During reverse polarity, no protection functions are available. PROFET™+ 24V BTT6200-4ESA Protection functions Datasheet 22 Rev. 1.00 2019-03-09

-VS(REV) ZD(AZ) LOGIC DSEL0 Reverse Polarity.vsd ZDS(AZ) IN0 RDEN RDSEL1 RDSEL0 RSENSE RIS VDS(REV) Microcontroller protection diodes ZIS(AZ) RIN DSEL1 RGND IS D L,RL Figure 18 Reverse polarity protection with external components

6.5 Overload protection

In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTT6200-4ESA offers several protection mechanisms.

6.5.1 Current limitation

At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the maximum current allowed in the switch IL(SC). During this time, the DMOS temperature increases, which affects the current flowing in the DMOS.

6.5.2 Temperature limitation in the power DMOS

Each channel incorporates both an absolute (TJ(SC)) and a dynamic (TJ(SW)) temperature sensor. Activation of either sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch OFF latches the output until the temperature has reached an acceptable value which is depicted in Figure 19. No retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch is switched ON again. Only the IN pin signal toggling can re-activate the power stage (latch behavior). PROFET™+ 24V BTT6200-4ESA Protection functions Datasheet 23 Rev. 1.00 2019-03-09

t IL t IL(x)SC IIS t0A IIS(FAULT) VDEN t0V TDMOS tTA TJ(SW) Hard start.vsd tsIS(FAULT) IL(NOM) IL(NOM) / kILIS tsIS(OC_blank) TJ(SC) tsIS(OFF) LOAD CURRENT LIMITATION PHASE LOAD CURRENT BELOW LIMITATION PHASE Temperature protection phase Figure 19 Overload protection Note: For better understanding, the time scale is not linear. The real timing of this drawing is application dependant and cannot be described. PROFET™+ 24V BTT6200-4ESA Protection functions Datasheet 24 Rev. 1.00 2019-03-09

6.6 Electrical characteristics for the protection functions

Table 7 Electrical Characteristics: Protection VS = 8 V to 36 V, TJ = -40°C to 150°C, (unless otherwise specified). Typical values are given at VS = 28 V, TJ = 25°C Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Loss of ground Output leakage current while GND disconnected IOUT(GND) – 0.1 – mA 12)13)VS = 28 V See Figure 15 P_6.6.1 Reverse polarity Drain source diode voltage during reverse polarity VDS(REV) 200 650 700 mV 14)IL = - 1 A See Figure 18 P_6.6.2 Overvoltage Overvoltage protection VS(AZ) 65 70 75 V ISOV = 5 mA See Figure 17 P_6.6.3 Overload condition Load current limitation IL5(SC) 9 11 14 A 15)VDS = 5 V See Figure 19 and Chapter 9.3 P_6.6.4 Dynamic temperature increase while switching ΔTJ(SW) – 80 – K 16)See Figure 19 P_6.6.8 Thermal shutdown temperature TJ(SC) 150 170 200 °C 14)See Figure 19 P_6.6.10 Thermal shutdown hysteresis ΔTJ(SC) – 30 – K 13) P_6.6.11 12 All pins are disconnected except VS and OUT . 13 Not Subject to production test, specified by design. 14 Test at TJ = +150°C only. 15 Test at TJ = -40°C only.

16 Functional test only

PROFET™+ 24V BTT6200-4ESA Protection functions Datasheet 25 Rev. 1.00 2019-03-09

7 Diagnostic functions

For diagnosis purposes, the BTT6200-4ESA provides a combination of digital and analog signals at pin IS. These signals are called SENSE. In case the diagnostic is disabled via DEN, pin IS becomes high impedance. In case DEN is activated, the sense current of the channel X is enabled/disabled via associated pins DSEL0 and DSEL1. Table 8 gives the truth table. Table 8 Diagnostic truth table DEN DSEL1 DSEL0 IS 0 don't care don't care Z Z Z Z 1 0 0 IIS(0) 0 0 0 1 0 1 0 IIS(1) 0 0 1 1 0 0 0 IIS(2) 0 1 1 1 0 0 0 IIS(3)

7.1 IS pin

The BTT6200-4ESA provides a sense signal called IIS at pin IS. As long as no “hard” failure mode occurs (short circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load at OFF) a proportional signal to the load current (ratio kILIS = IL / IIS) is provided. The complete IS pin and diagnostic mechanism is described in Figure 20. The accuracy of the sense current depends on temperature and load current. The sense pin multiplexes the currents IIS(0), IIS(1), IIS(2) and IIS(3) via the pins DSEL0 and DSEL1. Thanks to this multiplexing, the matching between kILISCHANNEL0, kILISCHANNEL1, kILISCHANNEL2 and kILISCHANNEL3 is optimized. Due to the ESD protection, in connection to VS, it is not recommended to share the IS pin with other devices if these devices are using another battery feed. The consequence is that the unsupplied device would be fed via the IS pin of the supplied device. DEN IS DSEL1 Sense schematic .vsd ZIS(AZ) IIS1= IL1 / kILISIIS(FAULT) DSEL0 IIS2 = IL2 / kILIS FAULT IIS3 = IL3 / kILIS FAULT IIS0= IL0/ kILIS VS Figure 20 Diagnostic block diagram PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 26 Rev. 1.00 2019-03-09

7.2 SENSE signal in differ ent operating modes

Table 9 gives a quick reference for the state of the IS pin during device operation. Table 9 Sense signal, function of operation mode Operation mode Input level channel x DEN17) Output level Diagnostic output Normal operation OFF H Z Z Short circuit to GND ~GND Z Overtemperature Z Z Short circuit to VS VS IIS(FAUL T) Open load < VOL(OFF)18) Z > VOL(OFF)18) IIS(FAUL T) Inverse current ~VINV IIS(FAUL T) Normal operation ON ~VS IIS = IL / kILIS Current limitation <VS IIS(FAUL T) Short circuit to GND ~GND IIS(FAUL T) Overtemperature TJ(SW) event Z IIS(FAUL T) Short circuit to VS VS IIS < IL / kILIS Open load ~VS19) IIS < IIS(OL) Inverse current ~VINV IIS < IIS(OL)20) Underload ~VS21) IIS(OL) < IIS < IL / kILIS Don't care Don't care L Don't care Z 17 The table doesn’t indicate but it is assumed that the appropriate channel is selected via the DSEL pins. 18 Stable with additional pull-up resistor. 19 The output current has to be smaller than IL(OL). 20 After maximum tINV. 21 The output current has to be higher than IL(OL). PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 27 Rev. 1.00 2019-03-09

7.3 SENSE signal in nominal current range

Figure 21 shows the current sense as a function of the load current in the power DMOS. Usually, a pull-down resistor RIS is connected to the current sense IS pin. This resistor has to be higher than 560 Ω to limit the power losses in the sense circuitry. A typical value is 1.2 kΩ. The blue curve represents the ideal sense current, assuming an ideal kILIS factor value. The red curves shows the accuracy the device provides across full temperature range at a defined current. Figure 21 Current sense for nominal load

7.3.1 SENSE signal variation as a function of temperature and load

In some applications a better accuracy is required at smaller currents. To achieve this accuracy requirement, a calibration on the application is possible. To avoid multiple calibration points at different load and temperature conditions, the BTT6200-4ESA allows limited derating of the kILIS value, at a given point (IL3; TJ = +25°C). This derating is described by the parameter ΔkILIS. Figure 22 shows the behavior of the sense current, assuming one calibration point at nominal load at +25°C. The blue line indicates the ideal kILIS ratio. The green lines indicate the derating on the parameter across temperature and voltage, assuming one calibration point at nominal temperature and nominal battery voltage. The red lines indicate the kILIS accuracy without calibration. PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 28 Rev. 1.00 2019-03-09

Figure 22 Improved current sense accuracy with one calibration point at 0.2 A PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 29 Rev. 1.00 2019-03-09

7.3.2 SENSE signal timing

Figure 23 shows the timing during settling and disabling of the SENSE. VINx t ILx t IIS t VDEN t tsIS(ON) tsIS(OFF) tONx 90% of IIS static 90% of IL static tsIS(ON_DEN) tsIS(LC) VINy t ILy t VDSEL t tsIS(chC) current sense settling disabling time.vsd tONxtOFFx tONy Figure 23 Current sense settling / disabling timing

7.3.3 SENSE signal in open load

7.3.3.1 Open load in ON diagnostic

If the channel is ON, a leakage current can still flow through an open load, for example due to humidity. The parameter IL(OL) gives the threshold of recognition for this leakage current. If the current IL flowing out the power DMOS is below this value, the device recognizes a failure, if the DEN (and DSEL) is selected. In that case, the SENSE current is below IIS(OL). Otherwise, the minimum SENSE current is given above parameter IIS(OL). Figure 24 shows the SENSE current behavior in this area. The red curve shows a typical product curve. The blue curve shows the ideal current sense. PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 30 Rev. 1.00 2019-03-09

Sense for OL.vsd IL(OL) IIS(OL) Figure 24 Current sense ratio for low currents

7.3.3.2 Open load in OFF diagnostic

For open load diagnosis in OFF-state, an external output pull-up resistor (ROL) is recommended. For the calculation of pull-up resistor value, the leakage currents and the open load threshold voltage VOL(OFF) have to be taken into account. Figure 25 gives a sketch of the situation. Ileakage defines the leakage current in the in the application. To reduce the stand-by current of the system, an open load resistor switch SOL is recommended. If the channel x is OFF, the output is no longer pulled down by the load and VOUT voltage rises to nearly VS. This is recognized by the device as an open load. The voltage threshold is given by VOL(OFF). In that case, the SENSE signal is switched to the IIS(FAUL T). An additional RPD resistor can be used to pull VOUT to 0 V. Otherwise, the OUT pin is floating. This resistor can be used as well for short circuit to battery detection, see Chapter 7.3.4 PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 31 Rev. 1.00 2019-03-09

V OL(OFF) Ileakage IIS(FAUL T) IS ILOFF OL comp. Open Load in OFF.vsd GND RPD Rleakage ROL Z GND RIS Figure 25 Open load detection in OFF electrical equivalent circuit

7.3.3.3 Open load diagnostic timing

Figure 26 shows the timing during either Open Load in ON or OFF condition when the DEN pin is HIGH. Please note that a delay tsIS(FAUL T_OL_OFF) has to be respected after the falling edge of the input, when applying an open load in OFF diagnosis request, otherwise the diagnosis can be wrong. PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 32 Rev. 1.00 2019-03-09

t IIS t tsIS(LC) tsIS(FAULT_OL_ON_OFF) Error Settling Disabling Time.vsd V S -V OL(OFF) R DS(ON) x I L IOUT Load is present Open load shutdown with load t Figure 26 Sense signal in open load timing

7.3.4 SENSE signal in short circuit to VS

In case of a short circuit between the OUTput-pin and the VS pin, all or portion (depending on the short circuit impedance) of the load current will flow through the short circuit. As a result, a lower current compared to the normal operation will flow through the DMOS of the BTT6200-4ESA, which can be recognized at the current sense signal. The open load at OFF detection circuitry can also be used to distinguish a short circuit to VS. In that case, an external resistor to ground RSC_VS is required. Figure 27 gives a sketch of the situation. PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 33 Rev. 1.00 2019-03-09

V OL(OFF) IIS(FAUL T) IS Short circuit to Vs.vsd V BAT OUT GND R SC_VSR IS Z GND OL comp. Figure 27 Short circuit to battery detection in OFF electrical equivalent circuit

7.3.5 SENSE signal in case of overload

An overload condition is defined by a current flowing out of the DMOS reaching the current limitation and / or the absolute dynamic temperature swing TJ(SW) is reached, and / or the junction temperature reaches the thermal shutdown temperature TJ(SC). Please refer to Chapter 6.5 for details. In that case, the SENSE signal given is by IIS(FAUL T) when the diagnostic is selected. The device has a thermal latch behavior, such that when the overtemperature or the exceed dynamic temperature condition has disappeared, the DMOS is reactivated only when the IN is toggled LOW to HIGH. If the DEN pin is activated, and DSEL pin is selected to the correct channel, the SENSE follows the output stage. If no reset of the latch occurs, the device remains in the latching phase and IIS(FAUL T) at the IS pin, even though the DMOS is OFF.

7.3.6 SENSE signal in case of inverse current

In the case of inverse current, the sense signal of the affected channel will indicate open load in OFF state and indicate open load in ON state. The unaffected channels indicate normal behavior as long as the IINV current does not exceed the maximum value specified in Chapter 5.4. PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 34 Rev. 1.00 2019-03-09

7.4 Electrical characteristics diagnostic function

Table 10 Electrical characteristics: Diagnostics VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified). Typical values are given at VS = 28 V, TJ = 25°C Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Load condition threshold for diagnostic Open load detection threshold in OFF state VS - VOL(OFF) 4 – 6 V 22) VIN = 0 V VDEN = 4.5 V See Figure 26 P_7.5.1 Open load detection threshold in ON state IL(OL) 5 – 15 mA VIN = VDEN = 4.5 V IIS(OL) = 33 μA See Figure 24 See Chapter 9.4 P_7.5.2 Sense pin IS pin leakage current when sense is disabled IIS_(DIS) – 0.02 1 µA 22) VIN = 4.5 V VDEN = 0 V IL = IL4 = A P_7.5.4 Sense signal saturation voltage VS- VIS (RANGE) 1 – 3.5 V VIN = 0 V VOUT = VS > 10 V VDEN = 4.5 V IIS = 6 mA See Chapter 9.4 P_7.5.6 Sense signal maximum current in fault condition IIS(FAUL T) 6 15 35 mA VIS = VIN = VDSEL = 0 V VOUT = VS > 10 V VDEN = 4.5 V See Figure 20 See Chapter 9.4 P_7.5.7 Sense pin maximum voltage VS to IS VIS(AZ) 65 70 75 V IIS = 5 mA See Figure 20 P_7.5.3 Current sense ratio signal in the nominal area, stable load current condition 22 DSEL pin select channel 0 only. PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 35 Rev. 1.00 2019-03-09

Table 10 Electrical characteristics: Diagnostics (continued) VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified). Typical values are given at VS = 28 V, TJ = 25°C Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Current sense ratio IL0 = 10 mA kILIS0 -50% 330 +50% VIN = 4.5 V VDEN = 4.5 V See Figure 21 TJ = -40°C; 150°C P_7.5.8 Current sense ratio IL1 = 0.05 A kILIS1 -40% 300 +40% P_7.5.9 Current sense ratio IL2 = 0.2 A kILIS2 -15% 300 +15% P_7.5.10 Current sense ratio IL3 = 0.5 A kILIS3 -11% 300 +11% P_7.5.11 Current sense ratio IL4 = 1 A kILIS derating with current and temperature ΔkILIS -8 0 +8 % 23) kILIS3 versus kILIS2 See Figure 22 P_7.5.17 Diagnostic timing in normal condition Current sense settling time to kILIS function stable after positive input slope on both INput and DEN tsIS(ON) – – 150 µs 23) VDEN = VIN = 0 to 4.5 V VS = 28 V RIS = 1.2 kΩ CSENSE < 100 pF IL = IL3 = 0.5 A See Figure 23 P_7.5.18 Current sense settling time with load current stable and transition of the DEN tsIS(ON_DEN) – – 10 µs 22) VDEN = 0 to 4.5 V RIS = 1.2 kΩ CSENSE < 100 pF IL = IL3 = 0.5 A See Figure 23 P_7.5.19 Current sense settling time to IIS stable after positive input slope on current load tsIS(LC) – – 15 µs 22) VDEN = 4.5 V RIS = 1.2 kΩ CSENSE < 100 pF IL = IL2 = 0.2 A to IL = IL3 = 0.5 A See Figure 23 P_7.5.20 Diagnostic timing in open load condition 23 Not subject to production test, specified by design. Current sense settling time to 22 DSEL pin select channel 0 only. PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 36 Rev. 1.00 2019-03-09

Table 10 Electrical characteristics: Diagnostics (continued) VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified). Typical values are given at VS = 28 V, TJ = 25°C Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Current sense settling time to IIS stable for open load detection in OFF state tsIS(FAUL T_OL _OFF) – – 50 µs 22) VDEN = 0 to 4.5 V RIS = 1.2 kΩ CSENSE < 100 pF VOUT = VS = 28 V P_7.5.22 Current sense settling time to IIS stable for open load detection in ON-OFF transition tsIS(FAUL T_OL _ON_OFF) – 150 – µs 23) VIN = 4.5 to 0 V VDEN = 4.5 V RIS = 1.2 kΩ CSENSE < 100 pF VOUT = VS = 28 V See Figure 26 P_7.5.23 Diagnostic timing in overload condition Current sense settling time to IIS stable for overload detection tsIS(FAUL T) – – 150 µs 24)25)26) VIN = VDEN = 0 to 4.5 V RIS = 1.2 kΩ CSENSE < 100 pF VDS = 5 V See Figure 19 P_7.5.24 Current sense over current blanking time tsIS(OC_blank – 350 – µs VIN = VDEN = 4.5 V RIS = 1.2 kΩ CSENSE < 100 pF VDS = 5 V to 0 V See Figure 19 P_7.5.32 Diagnostic disable time DEN transition to IIS < 50% IL /kILIS tsIS(OFF) – – 20 µs VIN = 4.5 V VDEN = 4.5 V to 0 V RIS = 1.2 kΩ CSENSE < 100 pF IL = IL3 = 0.5 A See Figure 23 P_7.5.25 22 DSEL pin select channel 0 only. 23 Not subject to production test, specified by design. Current sense settling time to 24 DSEL pin select channel 0 only. 25 Test at TJ = -40°C only. 26 Functional Test only. PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 37 Rev. 1.00 2019-03-09

Table 10 Electrical characteristics: Diagnostics (continued) VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified). Typical values are given at VS = 28 V, TJ = 25°C Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Current sense settling time from one channel to another tsIS(ChC) – – 20 µs VIN0 = VIN1 = 4.5 V VDEN = 4.5 V VDSEL = 0 to 4.5 V RIS = 1.2 kΩ CSENSE < 100 pF IL(OUT0) = IL3 = 0.5 A IL(OUT1) = IL2 = 0.2 A See Figure 23 P_7.5.26 PROFET™+ 24V BTT6200-4ESA Diagnostic functions Datasheet 38 Rev. 1.00 2019-03-09

8 Input pins

8.1 Input circuitry

The input circuitry is compatible with 3.3 V and 5 V microcontrollers. The concept of the input pin is to react to voltage thresholds. An implemented Schmitt trigger avoids any undefined state if the voltage on the input pin is slowly increasing or decreasing. The output is either OFF or ON but cannot be in a linear or undefined state. The input circuitry is compatible with PWM applications. Figure 28 shows the electrical equivalent input circuitry. In case the pin is not needed, it must be left opened, or must be connected to device ground (and not module ground) via a 10 kΩ input resistor. GND IN Input circuitry.vsd Figure 28 Input pin circuitry

8.2 DEN / DSEL0, 1 pin

The DEN / DSEL0, 1 pins enable and disable the diagnostic functionality of the device. The pins have the same structure as the INput pins, please refer to Figure 28.

8.3 Input pin voltage

The IN, DSEL and DEN use a comparator with hysteresis. The switching ON / OFF takes place in a defined region, set by the thresholds VIN(L) Max. and VIN(H) Min. The exact value where the ON and OFF take place are unknown and depends on the process, as well as the temperature. To avoid cross talk and parasitic turn ON and OFF, a hysteresis is implemented. This ensures a certain immunity to noise.

8.4 Electrical characteristics

Table 11 Electrical characteristics: Input pins VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified). Typical values are given at VS = 28V, TJ = 25°C Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. INput pins characteristics High level input voltage range VIN(H) 2 – 6 V See Chapter 9.5 P_8.4.2 PROFET™+ 24V BTT6200-4ESA Input pins Datasheet 39 Rev. 1.00 2019-03-09

Table 11 Electrical characteristics: Input pins (continued) VS = 8 V to 36 V, TJ = -40°C to 150°C (unless otherwise specified). Typical values are given at VS = 28V, TJ = 25°C Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Input voltage hysteresis VIN(HYS) – 250 – mV 27) See Chapter 9.5 P_8.4.3 Low level input current IIN(L) 1 10 25 µA VIN = 0.8 V P_8.4.4 High level input current IIN(H) 2 10 25 µA VIN = 5.5 V See Chapter 9.5 P_8.4.5 DEN Pin Low level input voltage range VDEN(L) -0.3 – 0.8 V – P_8.4.6 High level input voltage range VDEN(H) 2 – 6 V – P_8.4.7 Input voltage hysteresis VDEN(HYS) – 250 – mV 27) P_8.4.8 Low level input current IDEN(L) 1 10 25 µA VDEN = 0.8 V P_8.4.9 High level input current IDEN(H) 2 10 25 µA VDEN = 5.5 V P_8.4.10 DSEL Pins Low level input voltage range VDSEL(L) -0.3 – 0.8 V – P_8.4.11 High level input voltage range VDSEL(H) 2 – 6 V – P_8.4.12 Input voltage hysteresis VDSEL(HYS) – 250 – mV 27) P_8.4.13 Low level input current IDSEL(L) 1 10 25 µA VDSEL = 0.8 V P_8.4.14 High level input current IDSEL(H) 2 10 25 µA VDSEL = 5.5 V P_8.4.15 27 Not subject to production test, specified by design. PROFET™+ 24V BTT6200-4ESA Input pins Datasheet 40 Rev. 1.00 2019-03-09

9 Characterization results

The characterization has been performed on 3 lots, with 3 devices each. Characterization has been performed at 8 V, 28 V and 36 V overtemperature range.

9.1 General product characteristics

P_4.2.3 P_4.2.4 Minimum functional supply voltage VS(OP)_MIN = f(TJ) Undervoltage threshold VS(UV) = f(TJ) 4.000 4.100 4.200 4.300 4.400 4.500 4.600 4.700 4.800 4.900 5.000 -50 -25 0 25 50 75 100 125 150 [V] Temperature [°C] 28V 36V 3.000 3.100 3.200 3.300 3.400 3.500 3.600 3.700 3.800 3.900 4.000 -50 -25 0 25 50 75 100 125 150 [V] Temperature [°C] 28V 36V Current consumption for whole device with load - all channels active IGND_2 = f(TJ; VS) Standby current for whole device with load IS(OFF)= f(TJ; VS) 0.000 1.000 2.000 3.000 4.000 5.000 6.000 7.000 -50 -25 0 25 50 75 100 125 150 [mA] Temperature [°C] 28V 36V 0.000 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 -50 -25 0 25 50 75 100 125 150 [µA] Temperature [°C] 28V 36V PROFET™+ 24V BTT6200-4ESA Characterization results Datasheet 41 Rev. 1.00 2019-03-09

9.2 Power stage

P_5.5.4 P_5.5.5 Output voltage drop limitation at low load current: VDS(NL) = f(TJ) and VDS(NL) = f(VS) Drain to source clamp voltage VDS(AZ)= f(TJ) 7.000 7.500 8.000 8.500 9.000 9.500 10.000 10.500 11.000 11.500 12.000 -50 -25 0 25 50 75 100 125 150 [mV] Temperature [°C] 28V 36V 65.000 66.000 67.000 68.000 69.000 70.000 71.000 72.000 73.000 74.000 75.000 -50 -25 0 25 50 75 100 125 150 [V] Temperature [°C] 28V 36V P_5.5.11 P_5.5.12 Slew rate at turn ON dV / dtON = f(TJ; VS) = RL= 47 Ω Slew rate at turn OFF-dV / dtOFF = f(TJ; VS) = RL= 47 Ω 0.000 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 -50 -25 0 25 50 75 100 125 150 [V /µs] Temperature [°C] 28V 36V 0.000 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 -50 -25 0 25 50 75 100 125 150 [V /µs] Temperature [°C] 28V 36V PROFET™+ 24V BTT6200-4ESA Characterization results Datasheet 42 Rev. 1.00 2019-03-09

P_5.5.14 P_5.5.15 Turn ONtON = f(TJ; VS) = RL= 47 Ω Turn OFF tOFF = f(TJ; VS) = RL= 47 Ω 0.000 10.000 20.000 30.000 40.000 50.000 60.000 70.000 80.000 -50 -25 0 25 50 75 100 125 150 [ms] Temperature [°C] 28V 36V 0.000 10.000 20.000 30.000 40.000 50.000 60.000 70.000 80.000 90.000 -50 -25 0 25 50 75 100 125 150 [µs] Temperature [°C] 28V 36V P_5.5.19 P_5.5.20 Switch ON energy EON = f(TJ; VS) = RL= 47 Ω Switch OFF energy EOFF = f(TJ; VS) = RL= 47 Ω 0.00E+00 5.00E-05 1.00E-04 1.50E-04 2.00E-04 2.50E-04 -50 -25 0 25 50 75 100 125 150 [µJ] Temperature [°C] 28V 36V 0.00E+00 5.00E-05 1.00E-04 1.50E-04 2.00E-04 2.50E-04 3.00E-04 -50 -25 0 25 50 75 100 125 150 [µJ] Temperature [°C] 28V 36V PROFET™+ 24V BTT6200-4ESA Characterization results Datasheet 43 Rev. 1.00 2019-03-09

9.3 Protection functions

P_6.6.4 Overload condition in the low voltage area IL5(SC) = f(TJ; VS) 0.000 2.000 4.000 6.000 8.000 10.000 12.000 -50 -25 0 25 50 75 100 125 150 [A] Temperature [°C] 28V 36V PROFET™+ 24V BTT6200-4ESA Characterization results Datasheet 44 Rev. 1.00 2019-03-09

9.4 Diagnostic mechanism

P_7.5.2 Current sense at no loadIIS = f(TJ; VS)IL= 0 Open load detection ON state threshold IL(OL)= f(TJ) 0.000 0.200 0.400 0.600 0.800 1.000 1.200 1.400 -50 -25 0 25 50 75 100 125 150 [µA] Temperature [°C] 28V 36V 7.000 7.500 8.000 8.500 9.000 9.500 10.000 10.500 11.000 -50 -25 0 25 50 75 100 125 150 [mA] Temperature [°C] 28V 36V P_7.5.3 P_7.5.7 Sense signal at maximum voltageVIS(AZ) = f(TJ; VS) Sense signal maximum current in fault condition IIS(FAUL T)= f(TJ;VS) 65.000 66.000 67.000 68.000 69.000 70.000 71.000 72.000 73.000 74.000 75.000 -50 -25 0 25 50 75 100 125 150 [V] Temperature [°C] 28V 36V 0.000 2.000 4.000 6.000 8.000 10.000 12.000 14.000 16.000 18.000 20.000 -50 -25 0 25 50 75 100 125 150 [mA] Temperature [°C] 28V 36V PROFET™+ 24V BTT6200-4ESA Characterization results Datasheet 45 Rev. 1.00 2019-03-09

9.5 Input pins

P_8.4.1 P_8.4.2 Input voltage threshold VIN(L) = f(TJ;VS) Input voltage threshold VIN(H) = f(TJ;VS) 1.120 1.140 1.160 1.180 1.200 1.220 1.240 1.260 1.280 1.300 1.320 1.340 -50 -25 0 25 50 75 100 125 150 [V] Temperature [°C] 28V 36V 1.450 1.460 1.470 1.480 1.490 1.500 1.510 1.520 1.530 -50 -25 0 25 50 75 100 125 150 [V] Temperature [°C] 28V 36V P_8.4.3 P_8.4.5 Input voltage hysteresis VIN(HYS) = f(TJ;VS) Input current high level IIN(H) = f(TJ;VS) 0.000 50.000 100.000 150.000 200.000 250.000 300.000 350.000 -50 -25 0 25 50 75 100 125 150 [mV] Temperature [°C] 28V 36V 0.000 2.000 4.000 6.000 8.000 10.000 12.000 14.000 16.000 -50 -25 0 25 50 75 100 125 150 [µA] Temperature [°C] 28V 36V PROFET™+ 24V BTT6200-4ESA Characterization results Datasheet 46 Rev. 1.00 2019-03-09

Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. CVDD CVS A/D I/O I/O GND Micro controller DEN DSEL0 GND VS RSENSE RDEN RDSEL RDSEL DSEL1 RIS RIN I/O RIN RIN RIN OUT3 OUT4 IN0 IN1 IN2 IN3 VDD I/O I/O I/O I/O RLED OUT VS GND Voltage Regulator Z E.C.U. VBAT OUT0 OUT1 OUT2 OUT3 IS D R5W LED Relay RPDRPD RPD RPD CSENSE RGND COUT COUT COUT COUT ROL Page-1 Figure 29 Application diagram with BTT6200-4ESA Note: This is a very simplified example of an application circuit. The function must be verified in the real application. Table 12 Bill of material Reference Value Purpose RIN 10 kΩ Protection of the microcontroller during overvoltage, reverse polarity Guarantee BTT6200-4ESA channels OFF during loss of ground RDSEL 10 kΩ Protection of the microcontroller during overvoltage, reverse polarity RDEN 10 kΩ Protection of the microcontroller during overvoltage, reverse polarity PROFET™+ 24V BTT6200-4ESA

Application information

Datasheet 47 Rev. 1.00 2019-03-09

Table 12 Bill of material (continued) Reference Value Purpose RPD 47 kΩ Polarization of the output for short circuit to VS detection. Improve BTT6200-4ESA immunity to electromagnetic noise ROL 1.5 kΩ Polarization of the output during open load in OFF detection RIS 1.2 kΩ Sense resistor RSENSE 10 kΩ Overvoltage, reverse polarity, loss of ground. Value to be tuned with microcontroller specification. CSENSE 100 pF Sense signal filtering COUT 10 nF Protection of the device during ESD and BCI RLED 680 Ω Overvoltage protection of the LED. Value to be tuned with LED specification RGND 27 Ω Protection of the BTT6200-4ESA during overvoltage D BAS21 Protection of the BTT6200-4ESA during reverse polarity Z 58 V Zener diode Protection of the device during overvoltage CVS 100 nF Filtering of voltage spikes at the battery line T1 Dual NPN/PNP Switch the battery voltage for open load in OFF diagnostic

10.1 Further application information

• Please contact us to get the pin FMEA
• Existing App. Notes
• For further information you may visit www.infineon.com PROFET™+ 24V BTT6200-4ESA

Datasheet 48 Rev. 1.00 2019-03-09

1 ) D O E S N O T I N C L U D E P L A S T I C O R M E T A L P R O TR U S I O N O F 0 . 1 5 M A X . P E R S I D E 2 ) D A M B A R P R O T U S I O N S H A L L B E M A X I M U M 0 . 1 M M TO T A L I N E X C E S S O F L E A D W I DT H A L L D I M E N S I O N S A R E I N UN I TS M M T H E D R A W I N G I S I N C O M P L I A N C E W I T H I S O 1 2 8 & P R O J E C TI O N M E TH O D 1 [ ] 8 . 6 5 ± 0 . 1 1 . 1 5 M A X . C S E A T I N G P L A N E C O P L A N A R I TY 0 . 0 8 C 0 . 0 5 ± 0 . 0 5 S T A N D O F F 1 ) 0 . 1 2 x ( 0 . 9 5 ) 3 . 9 ± 0 . 1 0 . 1 2 x 1 ) D 0 . 6 7 ± 0 . 2 5 6 ± 0 . 2 2 4 x 0 . 2 D 0 . 2 5 G A U G E P L A N E 0 ° . . 8 ° ( 0 . 2 ) B O T T O M V I E W 6 . 4 ± 0 . 1 0 . 1 5 D 0 . 1 5 A - B 0 . 6 5 I N D E X M A R K I N G 0 . 2 5 ± 0 . 0 5 2 4 x 0 . 2 5 A - B C 2 ) A B 1 1 2 1 3 2 4 1 2 1 2 4 1 3 2 . 7 7 ± 0 . 1 2 4 x Figure 30 PG-TSDSO-24 (Plastic dual small outline package)(RoHS-compliant) Green product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb- free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Legal disclaimer for short-circuit capability Infineon disclaims any warranties and liablilities, whether expressed or implied, for any short-circuit failures below the threshold limit. PROFET™+ 24V BTT6200-4ESA Package outlines Datasheet 49 Rev. 1.00 2019-03-09

Revision history

1.00 2019-03-09 Datasheet created PROFET™+ 24V BTT6200-4ESA Datasheet 50 Rev. 1.00 2019-03-09

All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-03-09 Published by Infineon Technologies AG

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© 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-fst1527583024507 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury