BTS204WB

BTS204WB PHILIPS | Alldatasheet

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Philips Semiconductors Product specification Three quadrant triacs BTA204W series B and C high commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated high commutation triacs inSYMBOL PARAMETER MAX. MAX. MAX. UNIT a plastic envelope suitable for surface mounting intended for use in circuits BTA204W- 500B 600B 800B where high static and dynamic dV/dt BTA204W- 500C 600C 800C and high dI/dt can occur. These V DRM Repetitive peak 500 600 800 V devices will commutate the full rated off-state voltages rms current at the maximum rated I T(RMS) RMS on-state current 1 1 1 A junction temperature without the aid of ITSM Non-repetitive peak on-state 10 10 10 A a snubber. current PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate tab main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 VDRM Repetitive peak off-state - 500 1 6001 800 V voltages IT(RMS) RMS on-state current full sine wave; - 1 A Tsp ≤ 108 ˚C ITSM Non-repetitive peak full sine wave; on-state current T j = 25 ˚C prior to surge t = 20 ms - 10 A t = 16.7 ms - 11 A I2tI 2t for fusing t = 10 ms - 0.5 A 2s dIT/dt Repetitive rate of rise of ITM = 1.5 A; 100 A/ µs on-state current after IG = 0.2 A; triggering dI G /dt = 0.2 A/µs IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms - 0.5 W period Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature T1T2 G 1 23 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. December 1998 1 Rev 1.000

Philips Semiconductors Product specification Three quadrant triacs BTA204W series B and C high commutation THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-sp Thermal resistance full or half cycle - - 15 K/W junction to solder point R th j-a Thermal resistance pcb mounted; minimum footprint - 156 - K/W junction to ambient pcb mounted; pad area as in fig:2 - 70 - K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT Gate trigger current2 VD = 12 V; IT = 0.1 A T2+ G+ - - 50 35 mA T2+ G- - - 50 35 mA T2- G- - - 50 35 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - - 30 20 mA T2+ G- - - 45 30 mA T2- G- - - 30 20 mA IH Holding current V D = 12 V; IGT = 0.1 A - - 30 20 mA VT On-state voltage I T = 2 A - 1.2 1.5 V VGT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V VD = 400 V; IT = 0.1 A; 0.25 0.4 - V Tj = 125 ˚C ID Off-state leakage current VD = VDRM(max) ; Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT dVD /dt Critical rate of rise of VDM = 67% VDRM(max) ; Tj = 125 ˚C; 1000 1000 - V/ µs off-state voltage exponential waveform; gate open circuit dIcom /dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 1 A; 6 3 - A/ms commutating current dV com /dt = 20V/µs; gate open circuit tgt Gate controlled turn-on ITM = 12 A; VD = VDRM(max) ; IG = 0.1 A; - - 2 µs time dI G /dt = 5 A/µs 2 Device does not trigger in the T2-, G+ quadrant. December 1998 2 Rev 1.000

Philips Semiconductors Product specification Three quadrant triacs BTA204W series B and C high commutation Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS) , where α = conduction angle. Fig.2. Maximum permissible non-repetitive peak on-state current ITSM , versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.3. Maximum permissible non-repetitive peak on-state current ITSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.4. Maximum permissible rms current IT(RMS) , versus solder point temperature Tsp. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; Tsp ≤ 108˚C. Fig.6. Normalised gate trigger voltage VGT (Tj)/ VGT (25˚C), versus junction temperature Tj. 0.2 0.4 0.6 0.8 1.2 1.4 = 180 120 BT134W IT(RMS) / A Ptot / W Tsp(max) / C 125 122 119 116 113 110 107 104 -50 0 50 100 1500 0.2 0.4 0.6 0.8 1.2 BT134W Tsp / C IT(RMS) / A 108 C 100

1000 BT134W

I Tj initial = 25 C max T dI /dt limitT T2- G+ quadrant 0.01 0.1 1 100 0.5 1.5

2 BT134W

IT(RMS) / A 1 10 100 10000 BT134W Number of cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 BT136 Tj / C VGT(Tj) VGT(25 C) December 1998 3 Rev 1.000

Philips Semiconductors Product specification Three quadrant triacs BTA204W series B and C high commutation Fig.7. Normalised gate trigger current IGT (Tj)/ IGT (25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. Fig.9. Normalised holding current IH (Tj)/ IH (25˚C), versus junction temperature Tj. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-sp, versus pulse width tp. -50 0 50 100 1500 0.5 1.5 2.5 BTA204 Tj / C T2+ G+ T2+ G- T2- G- IGT(Tj) IGT(25 C) 0 0.5 1 1.5 20 0.5 1.5 Tj = 125 C typ max Tj = 25 C Vo = 1.0 V Rs = 0.21 Ohms -50 0 50 100 1500 0.5 1.5 2.5

3 TRIAC

IL(Tj) IL(25 C) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp / s 0.01 0.1 Zth j-sp (K/W)100 tpP t D unidirectional bidirectional BT134W -50 0 50 100 1500 0.5 1.5 2.5 IH(Tj) IH(25C) December 1998 4 Rev 1.000

Philips Semiconductors Product specification Three quadrant triacs BTA204W series B and C high commutation MOUNTING INSTRUCTIONS Dimensions in mm. Fig.12. soldering pattern for surface mounting SOT223. MECHANICAL DATA Dimensions in mm Net Mass: 0.11 g Fig.13. SOT223 surface mounting package. Notes 1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines". Order code: 9397 750 00505. 2. Epoxy meets UL94 V0 at 1/8". 3.8 min 6.32.3 4.6 1.5 min 1.5 min 1.5 min (3x) 6.7 6.3 3.1 2.9 1 23 2.31.05 0.85 0.80 0.60 4.6 3.7 3.3 7.3 6.7 B A 0.10 0.02 1316 max 1.8 max max 0.32 0.24 (4x) BM0.1 AM0.2 December 1998 5 Rev 1.000

Philips Semiconductors Product specification Three quadrant triacs BTA204W series B and C high commutation DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1998 6 Rev 1.000