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Rev. 1.0, 2009-05-05 BTS3256D 10 mΩ smart power single channel low side switch with restart and variable slew rate HITFET™ Smart Low Side Power Switch

Datasheet 2 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Table of Contents Table of Contents

Datasheet 3 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch BTS3256D BTS 3256D PG-TO-252-5-11 1O v e r v i e w The BTS 3256D is a single channel low-side power switch in PG-TO-252-5-11 package providing embedded protective functions. This HITFET™ is designed for automotive and industrial applications with outstanding protection and control features. The power transistor is a N-channel vertical power MOSFET. The device is controlled by a chip in Smart Power Technology. Basic Features

Slew rate control by dedicated pin enabling EMC optimized switching or PWM operation
Max. switching Frequency 12kHz
Clear detection of digital fault signal also du ring fast PWM operation due to restart delay time
Thermal and overload protection with time controlled auto restart behavior
Time and Power limited ac tive current limitation
Minimum R DS(on) achieved with 3.3V or 5V logic input
Electrostatic discha rge protection (ESD)
Very low leakage current
Green Product (RoHS compliant)
AEC (Automotive Electronics Coun cil) Stress Test Qualification Table 1 Basic Electrical Data Over voltage protection V D (AZ) 40 V Maximum ON State resistance at Tj = 150°C R DS(ON,max) 20 mΩ Typical ON State resistance at Tj = 25°C R DS(ON,typ) 10 mΩ Nominal load current I D(nom) 7.5 A Minimum current limitation I D(lim) 42 A

Datasheet 4 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Overview Digital Diagnostic Features

Over temperature
Over load
S h o r t c i r c u i t
Clear detection due to a restart delay time Protection Functions
Enhanced short circuit protection with time and power limited active current limitation
Under voltage lock out
Over temperature with time and temperature controlled auto restart
Over load with power and time controlled auto restart
ESD protection Application
All types of resistive, in ductive and capacitive loads
Suitable for loads with inru sh current, such as motors, coils, solenoids or lamps
Suitable for EMC optimized swit ching in slow operation mode
Suitable for higher speed PWM controlled loads in fast operation mode
Replacement of electromechanical relays, fuses and discrete circuits
Micro controller compatible low side power switch with digital feedback for 12V loads Detailed Description The BTS 3256D is an autorestart single channel low-si de power switch in PG-TO-252-5-11 package providing embedded protective functions. The device is able to switch all kind of resistive, inductive and capacitive loads. The ESD protection of the VS and IN/Fault pin is referenced to GND. The BTS 3256D is supplied by the VS Pin. This Pin should be connected to a reverse protected battery line. The supply voltage is monitored by the under voltage lock out circuit. The Gate driving unit allows the device to operate in the lowest ohmic range independent of the input signal level, 3.3 V or 5 V . For slow PWM application the device offers smooth turn-on and off due to the embedded edge shaping function, to reduce EMC noise. Furthermore the SRP pin can be used to customize the slew rate of the device in a wide range. The Device is designed for driving automotive loads like motors,valves, coils or bulbs in continous or PWM mode. The over voltage protection is for protection during load-dump or inductive turn off conditions. The power MOSFET is limiting the Drain-Source voltage to a specified level. This function is available even without any supply. The over temperature protection preven ts the device from overheating due to overload and/or bad cooling conditions. In order to reduce the device stress the edge shaping is disabled during thermal shutdown. After thermal shutdown the device stays off for the specified restart delay time to enable a clear feedback readout on the microcontroller. After this time the device follows the IN signal state. At high dynamic overload conditions, such as short circuit, the device will eith er turn off immedi ately due to the implemented over power limitation, or limit the current for a specified time and then switch off for the restart delay time. Shutdown of the device is triggered if the powe r dissipation during limitation is above the over power threshold. The short circuit shutdown is a timed restart function. The device will stay off for the specified time and afterwards follow the IN signal state. In order to reduce the device stress the edge shaping is disabled during protective turn off.

Datasheet 5 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D BTS 3256D Block Diagram

2 BTS 3256D Block Diagram

Figure 1 Block Diagram for the BTS3256D

2.1 Voltage and curren t naming definition

Following figure shows all the terms used in this datasheet, with associated convention for positive values. Figure 2 Terms Drain GND Gate Driving Unit Over- voltage Protection ESD protection IN / Fault Over- temperature Protection Overload Protection SRP VS Short circuit Protection BlockDiagram.emf ϑ Under voltage lockout Slew rate control Terms .emf VIN VD GND IGND Drain Vbb RL IN / Fault VS VS ID IIN IS Vbb GND SRP VSR P

Datasheet 6 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Pin Configuration

3 Pin Configuration

3.1 Pin Assignment BTS 3256D

Figure 3 Pin Configuration

3.2 Pin Definitions and Functions

1 VS Supply Voltage;

Connected to Battery Voltage with Reverse protection Diode and Filter against EMC 2I N Control Input and Status Feedback; Digital input 3.3 V or 5 V logic. 3, Tab Drain Drain output; Protected low side power output channel, usually connected via load to battery 4S R P Slew Rate Preset; Used to define slew rate, see Chapter 7.2 for details 5G N D Ground; Power ground, pin connection needs to carry the load current from Drain Drain Drain (top view ) GND5 6 (Tab) SRP IN VS PinConfiguration .emf

Datasheet 7 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D General Product Characteristics

4 General Product Characteristics

4.1 Absolute Maximum Ratings

Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 1) Not subject to production test, specified by design. Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. Voltages

4.1.1 Supply voltage

VS -0.3 30 V – 4.1.2 Supply voltage during active clamping VS(pulse) -0.3 45 2) 2) Not for DC operation, only for short pulse (i.e. loaddump) for a total of 100 h in full device life. 4.1.3 Drain voltage V D -0.3 40 3) 3) Active clamped.

4.1.4 Drain voltage for short circuit protection VD(SC) 03 0 V 4)

4) The Device can not be switched on if VD > VD(SC) 4.1.5 Logic input voltage VIN -0.3 5.5 V – 4.1.6 Slew Rate Preset maximum voltages VSRP -0.3 5.5 V 5) 5) SRP Pin is driven by an internal current source, so active driving from outside is not required,it may affect lifetime and could cause parameter shifts outside the range given in datasheet Energies

4.1.7 Unclamped sing le pulse inductive

EAS 00 . 3 J ID = 22 A; Vbb = 30 V Temperatures

4.1.8 Junction Temperature

Tj -40 150 °C–

4.1.9 Storage Temperature Tstg -55 150 °C–

4.1.10 ESD Resistivity

VESD kV HBM 6) 6) ESD susceptibility, HBM accordin g to EIA/JESD 22-A114B, section4 on input pins (IN,SRP,VS) IN -4 4 on Drain and GND pins OUT -8 8

Datasheet 8 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D General Product Characteristics

4.2 Functional Range

Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table.

4.3 Thermal Resistance

Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. 4.2.1 Supply Voltage VS 5.5 30 V –

4.2.2 Supply current in on IS –3m A –

Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max.

4.3.1 Junction to Case 1)

1) Not subject to production test, specified by design RthjC – 0.9 1.1 K/W – 4.3.2 Junction to ambient 1) RthjA – 80 – K/W @min. footprint – 45 – K/W @ 6 cm² cooling area, see Figure 4

Datasheet 9 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D General Product Characteristics Figure 4 Typical transient thermal impedance ZthJA = f(tp) , Pulse D = tp/T, Ta = 25 °C Device on 50 mm × 50 mm × 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB mounted vertical without blown air.ZthJA s 0.1 K/W tp Zth.emf 0.2 0.1 0.5 Single pulse 0.01 0.02 0.05 100 -4 11 0 1 0

Datasheet 10 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Supply and Input Stage

5 Supply and Input Stage

5.1 Supply Circuit

The Supply pin VS is protected against ESD pulses as shown in Figure 5. Due to an internal voltage regulator the device can be supplied from a reverse polarity protected battery line. Figure 5 Supply Circuit

5.1.1 Under Voltage Lock Out / Power On Reset

In order to ensure a stable device behavior under all allowed conditions the Supply voltage VS is monitored by the under voltage lock out circuit. All device functions are only given for supply voltages above under voltage lockout. There is no failure feedback for VS < VSUVON. Figure 6 Under Voltage Lock Out

5.2 Input Circuit

Figure 7 shows the input circuit of the BTS 3256D. It’s ensured that the device switches off in case of open input pin. A Zener structure protects the input circuit against ESD pulses. As the BTS 3256D has a supply pin, the operation of the power MOS can be maintained regardless of the voltage on the IN pin, therefore a digital status feedback down to logic low is realized. For readout of the fault information, please refer to Diagnosis “Readout of Fault Information” on Page 20. Supply .emf 5.5V .. 30V GND VS ZD Regulator BTS3256 D VSUVONVSUVOFF functional off Device UVLO.emf

Datasheet 11 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Supply and Input Stage Figure 7 Input Circuit input.em fGND IN/Fault 1.0mA 3.0mA 20µA 100µA

Datasheet 12 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Supply and Input Stage

5.3 Electrical Characteristi cs - Supply and Input Stages

VS = 5.5 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Under Voltage Lockout 5.3.1 UV-switch-on voltage VSUVON ––5 . 6 V – 5.3.2 UV-switch-off voltage VSUVOFF 4.0 – 5.5 V – 5.3.3 UV-switch-off hysteresis VSUVHY –0 . 2 –V VSUVON - VSUVOFF Digital Input / Fault Feedback 5.3.4 Low level voltage VINL -0.3 – 0.8 V – 5.3.5 High level voltage VINH 2.0 – 5.5 V – 5.3.6 Input pull down current IIN 20 50 100 µA VIN = 5.3 V; no fault condition 5.3.7 Input pull down current in Fault IIN-Fault 123m A VIN = 5.3 V; all fault conditions

Datasheet 13 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage

6 Power Stage

The power stage is built by a N-channel vertical power MOSFET (DMOS).

6.1 Output On-state Resistance

The on-state resistance depends on the junction temperature TJ. Figure 8 shows this dependence for the typical on-state resistance RDS(on). Figure 8 Typical On-State Resistance RDSon = f(TJ), VS = 10 V, VIN = high Figure 9 Typical On-State Resistance RDSon = f(VS), VIN = high, Tambient = 25 °C -50 -25 0 25 50 75 100 125 150 175 typ. rdson_Tj.emf T [ °C ] RDS(on) [ mΩ ] 01 0 2 0 3 0 RDS(on) [ mΩ ] VS [ V ] rdson_Vs.emf typ.

Datasheet 14 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage

6.2 Output Timings and Slopes

A high signal on the input pin causes the power MOSFET to switch on with a dedicated slope which is optimized for low EMC emission. Figure 10 shows the timing definition. Figure 10 Definition of Power Output Timing for Resistive Load In order to minimize the emission during switching, the BTS 3256D limits the slopes during turn on and off at slow slew rate settings. For best performanc e of the edge shaping, the supply pin VS should be connected to battery voltage. For supply voltages other than nominal battery, the edge shaping can differ from the Values in the electrical characteristics table below.

6.3 Inductive Output Clamp

When switching off inductive loads with lo w-side switches, the Drain Source voltage VD rises above battery potential, because the inductance intends to continue driving the current. The BTS 3256D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage VD at a certain level. See Figure 11 for more details. Figure 11 Output Clamp IN Low High ton toff t VD Vbb OutputTiming.emt tond 10 % 90 % toffd |dv/dt| shaping |dv/dt| shaping |dv/dt|on |dv/dt|off 80 % 20 % |dv/dt| shaping output_clamp_curcuit.emf GND Drain

Datasheet 16 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage Figure 13 Maximum allowed inductance values for single switch off (EAS) L=f (IL), Tj,start= 150 °C, Vbb=30V, RL= 0 Ω 0,01 0,10 1,00 10,00

10 ID [ A ]

L [ mH ] Max. 50 EAS.emf

Datasheet 17 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage

6.4 Electrical Character istics - Power Stage

VS = 5.5 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Power Supply

6.4.1 On-state resistance RDS(on) –1 0 –m Ω TJ = 25 °C;

ID = 20 A; VIN = high VS = 10 V –1 6 2 0 m Ω TJ = 150 °C; ID = 20 A; VIN = high VS = 10 V 6.4.2 Nominal load current 1) ID(nom) 7.5 8.7 – A TJ < 150 °C; TA 85 °C SMD2); VIN = high; VS ≥ 10 V; VDS = 0.5 V

6.4.3 ISO load current 1) ID(ISO) 31 33 – A TJ < 150 °C;

TC = 85 °C; VIN = high VS ≥ 10 V; VDS = 0.5 V;

6.4.4 Off stat e drain current IDSS –61 2 µA VD = 32 V;

VIN = low 6.4.5 – 1 2 µA1) TJ = 85 °C; VD = 13.5 V; VIN = low Dynamic Characteristics 6.4.6 power up settling time tinit –1 0 2 5 µ s V s > 6 V first rising edge on IN pin. Timings with fastest slew rate setting 6.4.7 Turn-on delay tond_fast –41 0 µs RL = 2.2 Ω; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 6.4.8 Turn-on time ton_fast –1 1 2 2 µs RL = 2.2 Ω; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 6.4.9 Turn-off delay toffd_fast 41 0 1 5 µs RL = 2.2 Ω; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10

Datasheet 18 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage 6.4.10 Turn-off time toff_fast 91 6 2 4 µs RL = 2.2 Ω; RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10

6.4.13 Slew rate during edge

|dV/dt|shaping_fast –0 . 6 6 – V / µs 1) RL = 2.2 Ω RSRP = OPEN; Vbb = VS = 13.5 V; see Figure 10 Timings with slowest slew rate setting 6.4.14 Turn-on delay tond_slow –2 2 6 0 µs RL = 2.2 Ω; RSRP = GND; Vbb = VS = 13.5 V see Figure 10 6.4.15 Turn-on time ton_slow –8 5 2 0 0 µs RL = 2.2 Ω; RSRP = GND; Vbb = VS = 13.5 V see Figure 10 6.4.16 Turn-off delay toffd_slow –7 5 1 1 0 µs RL = 2.2 Ω; RSRP = GND; Vbb = VS = 13.5 V see Figure 10 6.4.17 Turn-off time toff_slow 40 150 220 µs RL = 2.2 Ω; RSRP = GND; Vbb = VS = 13.5 V see Figure 10 VS = 5.5 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max.

Datasheet 19 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Power Stage RSRP = GND; Vbb = VS = 13.5 V see Figure 10 RSRP = GND; Vbb = VS = 13.5 V see Figure 10

6.4.20 Slew rate during edge

|dV/dt|shaping_slow – 0.088 – V/ µs 1) RL = 2.2 Ω; RSRP = GND; Vbb = VS = 13.5 V see Figure 10 Inverse Diode

6.4.21 Inverse Diode forward

VS = 0 V; VIN = 0.0 V 1) Not subject to production test, specified by Design. 2) Device mounted according to EIA/JESD 52_2, FR4, 50 × 50 × 1.5 mm; 35µ Cu, 5µ Sn; 6 cm2 . PCB mounted without blown air VS = 5.5 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max.

Datasheet 20 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Control and Diagnosis

7 Control and Diagnosis

The BTS3256D provides digital fault feedback on the IN pin without the need of an ADC. Additonally the device features an adjustable slew rate via the SRP pin.

7.1 Readout of Fault Information

The BTS 3256D provides digital status information via an increased current on the IN / Fault pin. The voltage on this pin is pulled down to logic low when a fitting serial resistor is used. An example for the required circuitry is shown in Figure 14. The increased current IIN(fault) is one order of magnitude above the normal operation current IIN. A 3k3 for a 3.3V µC or 5k6 for a 5V µC is recommended. For detailed calculation please refer to “Dimensioning of serial Resistor at IN pin” on Page 26. Figure 14 Readout of feedback info rmation and XOR logic in micro

7.2 Adjustable Slew Rate

In order to optimize electromagnitic emission, the switching speed of the MOSFET can be adjusted by connecting an external resistor between SRP pin and GND. This allows for balancing between electromagnetic emissions and power dissipation. RSRP-min represents the minimum slew rate Slew ratemin and RSRP-max represents the maximum slew rate Slew ratemax. A short to GND causes the minimum slew rate Slew ratemin. Open pin condition causes the maximum Slew rate Slew ratemax. Figure 15 shows the relation between the resistor value and the slew rate of BTS 3256D. IN/Fault BTS3256Micro controller VCC VS GNDGND DO DI VDI IDO IINR1 VCC GND Vbb =1 0 Fault Fault_readout.emf

Datasheet 21 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Control and Diagnosis

7.3 Electrical Charact eristics - Diagnostic

Figure 15 Typical relation between slew rate and resistor values used on RSRP (Vbat=13.5V) VS = 5.5 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Slew rate control

7.3.1 Slew ratemin Slew

0.08 0.2 0.6 V/µs R SRP = 0 Ohm VS = 13.5 V; ohmic load

7.3.2 Slew rate15k Slew

0.2 0.6 – V/µs R SRP = 15 kOhm VS = 13.5 V; ohmic load

7.3.3 Slew rate30k Slew

0.7 1.45 – V/µs R SRP = 30 kOhm VS = 13.5 V; ohmic load

7.3.4 Slew ratemax Slew

1.2 2.2 3.8 V/µs SRP pin open VS = 13.5 V; ohmic load 0,5 1,5 2,5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 S lew rate [ V/µs ] RSRP [ kΩ ] Slewrate.emf

Datasheet 22 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Protection Functions

8 Protection Functions

The device provides embedded protection functions against over temperature, over load and short circuit. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operation.

8.1 Thermal Protection

The device is protected against over temperature resulting from overload and / or bad cooling conditions. The BTS 3256D has a thermal restart function. When overh eating occurs, the device sw itches off for the restart delay time trestart. After this time the device restarts if the temperature is below threshold and the IN has logic high level. The fault feedback is activated during over temperature situation. See Figure 16 for the restart behavior. The diagram naming refers to Figure 14. Figure 16 Status Feedback via Input Current at Over temperature

8.2 Over Voltage Protection

The BTS 3256D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage VD at a certain level. This stage is also used for inductive clamping. See “Inductive Output Clamp” on Page 14 for details. IN Low High t Thermal shutdown low high t t TJ TJS D IIN IINnom IIN fault ∆TJS D After delay time , IN is high Over temperature is gone Don’t care thermal _fault_ autorestart .emf VDI trest art

Datasheet 23 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Protection Functions

8.3 Short Circuit Protection

The condition short circuit is an overload condition of the device. In a short circuit condition, the resulting dI / dt is a function of the short circuit resistance. The BTS3256D incorporates 2 shut down strategies for maximum robustness in the presence of short circuits: - immediate shut down in the case of low ohmic shorts by power detection exceeding Pmax - over temperature shut down in the case of an overload condition The additional feature of this device is a limitation of the load current to Ilim for a maximum time of tlim. If the condition is normalized in a shorter time than tlim, the device stays on, if not the device switch off for trestart and tries to restart in case the IN pin is still high. From first switch off the fault fe edback will be activated during trestart and continues until the IN pin goes low or normal condition is reached. Figure 18 shows the behavior mentioned above. In this exam ple first a shorted load occurs which causes the device to limit the current. The device stays on, because the load current returns to normal condition before trestart. In the second switch on, the short circuit is permanent and the device switches OFF after maximum limiting time, stays OFF for the blanking time regardless of the input pi n condition and then stays OFF according to the IN pin low condition. The definitions of voltages and currents are in respect to Figure 14. The behavior of VDI also depends on RIN. Figure 17 Typical Power limitation behavior I DS / VDS 01 0 2 0 3 0 ID [ A ] VDrain [ V ] Power_limitation .emf Safe operation area Protective Shut Down

Datasheet 25 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Protection Functions

8.4 Electrical Charact eristics - Protection

VS = 5.5 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Thermal Protection

8.4.1 Thermal shut down junction

TJSD 150 175 1) 1) Not subject to production test, specified by design. – °C–

8.4.2 Thermal hysteresis ∆TJSD –1 0 –K 1)

8.4.3 Drain source clamp voltage VD(AZ) 40 44 - V ID = 10 mA;

VS = 0.0 V; VIN = 0.0 V – 4 54 9V ID = 8 A; VS = 0.0 V; VIN = 0.0 V Short Circuit Protection 8.4.4 current limitation level I D(lim) 42 55 72 A ohmic load 8.4.5 max. power switch OFF threshold Pmax 300 400 650 W – 8.4.6 max. time for current limitation before shut OFF tlim 3.5 5 6.5 ms 2) resistive load 2) In case of inductive loads the device needs to increase the VDS voltage during current limitation. This can trigger the over Power protection switch off earlier as tlim. 8.4.7 restart delay time trestart 50 70 100 ms –

Datasheet 26 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D

Application Information

9 Application Information

Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device.

9.1 Dimensioning of serial Resistor at IN pin

In order to use the digital feedback function of the device, there must be a serial resistor used between the IN pin and the driver (micro controller). To calculate this serial resistor on the input pin, three device conditions and of course the driver (micro controller) abilities need to be taken into account. Figure 20 shows the circuit used for reading out the digital status. Figure 20 Circuitry to readout fault information Note: This is a very simplified example of an application circuit. The function must be verified in the real application. Conditions to be meet by the circuitry: During normal operation VIN must be higher than VINH,min to switch ON. During fault condition the max. capab ility of the driver (micro controller) must not be exceeded and the logic low level at DI must be ensured by a voltage drop over the serial resistor RIN while the device fault current is flowing. Conditions in formulas:

µCoutput current,min > µCHIGH,max / RIN > IINFault_min with µCoutput current,min referring to the µC maximum output current capability with µCHIGH,max referring to the maximal high output voltage of the µC driving stage This condition is valid during status feedback operation mode
VIN = µCHIGH,min - (RIN * IIN,max) > VINH,min with µCHIGH,min referring to the minimal high output voltage of the µC driving stage This condition is valid during normal operation mode IN/Fault DO DI IDO IIN RIN 1.0mA 3.0mA 20µA 100µA Fault information Microcontroller BTS3256VRI N GND VDO VDI GND VCC VS GND VCC Vbb Fault_R1dim.emf RSRP SRP

Datasheet 27 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D

µCHIGH,max - (RIN * IIN-Fault,min) < µC(DI)L,max with µC(DI)L,max referring to the maximum logic low voltage of the µC input stage The maximum current is either defined by the BTS 3256D or the µC driving stage This condition is valid during status feedback operation mode Out of this conditions the minimum and maximum resistor values can be calculated. For a typical 5V micro controller with output current capability in the 3 mA range, a resistor range from 7.5 kΩ down to 4.5 kΩ can be used. For a typical 3.3V micro controller a range from 4.6 kΩ to 2.5 kΩ is suitable.

9.2 Further Application Information

For further information you may contact http://www.infineon.com/hitfet

Datasheet 28 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D Package Outlines Figure 21 PG-TO-252-5-11 (Plastic Green Thin Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). GPT09161 5.4 ±0.1 -0.106.5+0.15 A ±0.59.9 6.22-0.2 1±0.1 ±0.150.8 0.15 max ±0.1per side 5x0.6 1.14 4.56 +0.08 -0.040.9 2.3 -0.10 +0.05 B 0.51 min ±0.11 +0.08 -0.040.5 0...0.15 BA0.25 M 0.1 All metal surfaces tin plated, except area of cut. (4.17) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm

Datasheet 29 Rev. 1.0, 2009-05-05 Smart Low Side Power Switch HITFET - BTS 3256D

Revision History

Rev. 1.0 2009-05-05 released Datasheet

81726 Munich, Germany

© Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Product Information

BTS 3256D specifications and overview.

Summary

Smart Low Side Power Switch Rev. 1.0, 2009-05-05

Description

Smart Low Side Power Switch Rev. 1.0, 2009-05-05

Source title BTS 3256D Datasheet(PDF) - Infineon Technologies AG

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