BTN7960

BTN7960 INFINEON | Alldatasheet

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Technical content

High Current PN Half Bridge NovalithIC™ Data Sheet, Rev. 1.1, Nov. 2007 Automotive Power

Data Sheet 2 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Table of Contents

BTN7960B PG-TO263-7-1 BTN7960B BTN7960P PG-TO220-7-11 BTN7960P BTN7960S PG-TO220-7-12 BTN7960S Data Sheet 3 Rev. 1.1, 2007-11-21 BTN7960B BTN7960P BTN7960S High Current PN Half Bridge NovalithIC™ 1O v e r v i e w

Features

• Path resistance of max. 30.5 m Ω @ 150 °C (typ. 16 mΩ @ 25 °C) High Side: max. 12.8 mΩ @ 150 °C (typ. 7 mΩ @ 25 °C) Low Side: max. 17.7 mΩ @ 150 °C (typ. 9 mΩ @ 25 °C) (for BTN7960B (SMD))
• Low quiescent current of typ. 7 μA @ 25 °C
• PWM capability of up to 25 kHz co mbined with active freewheeling
• Switched mode current limitation for reduced power dissipation in overcurrent
• Current limitation level of 33 A min. / 47 A typ. (low side)
• Status flag diagnosis with current sense capability
• Overtemperature shut down with latch behaviour
• Overvoltage lock out
• Undervoltage shut down
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
• Green Product (RoHS compliant)
• AEC Qualified

Description

The BTN7960 is a integrated high current half bridge for motor drive applications. It is part of the NovalithIC™ family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against over- temperature, overvoltage, undervoltage, overcurrent and short circuit. The BTN7960 provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption.

Data Sheet 4 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Diagram

2 Block Diagram

The BTN7960 is part of the NovalithIC™ family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a integrated high current half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel highside switch the need for a charge pum p is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustme nt, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTN7960 can be combined with other BTN7960 to form H-bridge and 3-phase drive configurations.

2.1 Block Diagram

2.2 Terms

Following figure shows the terms used in this data sheet. Figure 2 Terms IS SR INH IN GND OUT VS Gate Driver HS Slewrate Adjustment Digital Logic Overvolt. detection Overtemp. detection Overcurr. Detection LS Overcurr. Detection HS Current Sense Undervolt. detection Gate Driver LS LS off HS off IIN VIN OUT IINH VINH VSR ISR VIS IIS VS IOUT , I L VOUT VDS (HS ) GND IGND, ID(LS) IVS , -I D(HS) IN INH SR IS VS VSD(LS )

Data Sheet 5 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Pin Configuration

3 Pin Configuration

3.1 Pin Assignment

Figure 3 Pin Assignment BTN7960B, BTN7960P and BTN7960S (top view)

3.2 Pin Definitions and Functions

Bold type: pin needs power wiring Pin Symbol I/O Function 1G N D - G r o u n d

2 IN I Input

Defines whether high- or lowside switch is activated

3 INH I Inhibit

When set to low device goes in sleep mode 4,8 OUT O Power output of the bridge 5S R I S l e w R a t e The slew rate of the power switches can be adjusted by connecting a resistor between SR and GND

6 IS O Current Sense and Diagnostics

7 VS - Supply

Data Sheet 6 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 General Product Characteristics

4 General Product Characteristics

4.1 Absolute Maximum Ratings

Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 1) Not subject to production test, specified by design Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. Voltages

4.1.1 Supply Voltage

VS -0.3 45 V –

4.1.2 Logic Input Voltage VIN

-0.3 5.3 V – 4.1.3 Voltage at SR Pin VSR -0.3 1.0 V – 4.1.4 Voltage between VS and IS Pin VS -VIS -0.3 45 V –

4.1.5 Voltage at IS Pin VIS -20 45 V –

4.1.6 HS/LS Conti nuous Drain Current2)

2) Maximum reachable current may be smaller depending on current limitation level ID(HS) ID(LS) -44 44 A TC < 85°C switch active -40 40 A TC < 125°C switch active

4.1.7 HS/LS Pulsed Drain Current 2) ID(HS)

ID(LS) -90 90 A TC < 85°C tpulse = 10ms single pulse -85 85 A TC < 125°C tpulse = 10ms single pulse

4.1.8 HS/LS PWM Current 2) ID(HS)

ID(LS) -55 55 A TC < 85°C f = 1kHz, DC = 50% -50 50 A TC < 125°C f = 1kHz, DC = 50% -60 60 A TC < 85°C f = 20kHz, DC = 50% -54 54 A TC < 125°C f = 20kHz, DC = 50% Temperatures

4.1.9 Junction Temperature Tj -40 150 °C–

4.1.10 Storage Temperature Tstg -55 150 °C–

4.1.11 ESD Susceptibility HBM

IN, INH, SR, IS OUT, GND, VS VESD kV HBM 3) ESD susceptibility, HBM accordin g to EIA/JESD22-A114-B (1.5 kΩ, 100 pF)

Data Sheet 7 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 General Product Characteristics Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Maximum Single Pulse Current Figure 4 BTN7960 Maximum Single Pulse Current ( TC < 85°C) This diagram shows the maximum single pulse curr ent that can be driven for a given pulse time tpulse. The maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited due to thermal protection of the device. 100 tpulse [s] |I max | [A]

Data Sheet 8 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 General Product Characteristics

4.2 Functional Range

Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the Electrical Characteristics table.

4.3 Thermal Resistance

Pos. Parameter Symbol Limit Values Unit Conditions Min. Max.

4.2.1 Supply Voltage Range for

VS(nom) 81 8 V –

4.2.2 Extended Supply Voltage Range for

VS(ext) 5.5 28 V Parameter Deviations possible

4.2.3 Junction Temperature Tj -40 150 °C–

Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max.

4.3.1 Thermal Resistance

Junction-Case, Low Side Switch1) Rthjc(LS) = ΔTj(LS)/ Pv(LS) 1) Not subject to production test, specified by design RthJC(LS) – 1.3 1.8 K/W –

4.3.2 Thermal Resistance

Junction-Case, High Side Switch1) Rthjc(HS) = ΔTj(HS)/ Pv(HS) RthJC(HS) – 0.6 0.9 K/W –

4.3.3 Thermal Resistance

Junction-Case, both Switches1) Rthjc = max[ΔTj(HS), ΔTj(LS)] / (Pv(HS) + Pv(LS)) RthJC – 0.7 1.0 K/W –

4.3.4 Thermal Resistance

Junction-Ambient1) RthJA –2 0 –K / W 2) 2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu).

Data Sheet 9 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Description and Characteristics

5 Block Description and Characteristics

5.1 Supply Characteristics

Figure 5 Typical Quiescent Current vs. Junction Temperature VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0 A, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. General

5.1.1 Supply Current IVS(on) –23m A VINH = 5 V

VIN = 0V o r 5V RSR = 0 Ω DC-mode normal operation (no fault condition)

5.1.2 Quiescent Current IVS(off) –71 2 µ A VINH = 0 V

VIN = 0V o r 5V Tj < 85 °C ––6 5 µ A VINH = 0 V VIN = 0V o r 5V -40 0 40 80 1 20 1 60 T I VS(off) [µA] [°C]

Data Sheet 10 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Description and Characteristics

5.2 Power Stages

The power stages of the BTN7960 consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in a separate top chip. Both switches can be operated up to 25 kHz, allowing active freewheeling and thus minimizing power dissipation in the forward operation of the integrated diodes. The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The typical on state resistance characteristics are shown in Figure 6. Figure 6 Typical ON State Resistance vs. Supply Voltage (BTN7960B) 4 8 12 16 2 0 2 4 2 8 High Side Switch Tj = 150°C Tj = 25°C Tj = -40°C VS [V] RON(HS) [mΩ] 4 8 12 16 2 0 2 4 2 8 Low Side Switch Tj = 150°C Tj = 25°C Tj = -40°C RON(LS) [mΩ] VS [V]

Data Sheet 11 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Description and Characteristics

5.2.1 Power Stages - Static Characteristics

VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. High Side Switch - Static Characteristics

5.2.1 ON State High Side Resistance

1) Specified RON value is related to normal soldering points; RON values is specified for BTN7960B: pin 1,7 to pin 8 (tab, backside) and for BTN7960P/BTN7960S: pin 1,7 to pin4 RON(HS) 12.8 mΩ IOUT = 9 A; VS = 13.5 V BTN7960B Tj = 25 °C Tj = 150 °C 7.8 11.2 BTN7960P Tj = 25 °C Tj = 150 °C 7.1 10.2 BTN7960S Tj = 25 °C Tj = 150 °C

5.2.2 Leakage Current High Side IL(LKHS) – –1µ A VINH = 0 V; VOUT = 0 V

Tj < 85 °C –– 5 0 µ A VINH = 0 V; VOUT = 0 V Tj = 150 °C

5.2.3 Reverse Diode Forward-Voltage

High Side2) 2) Due to active freewheeling, diode is conducting only for a few µs, depending on RSR VDS(HS) 0.9 0.8 0.6 1.5 1.1 0.8 V IOUT =- 9A Tj = -40 °C Tj = 25 °C Tj = 150 °C Low Side Switch - Static Characteristics

5.2.4 ON State Low Side Resistance 1) RON(LS)

17.7 mΩ IOUT =- 9A ; VS = 13.5 V BTN7960B Tj = 25 °C Tj = 150 °C 9.8 15.2 18.9 BTN7960P Tj = 25 °C Tj = 150 °C 9.1 14.2 17.9 BTN7960S Tj = 25 °C Tj = 150 °C

5.2.5 Leakage Current Low Side IL(LKLS) – –1µ A VINH = 0 V; VOUT = VS

Tj < 85 °C –– 1 0 µ A VINH = 0 V; VOUT = VS Tj = 150 °C

5.2.6 Reverse Diode Forward-Voltage

Low Side2) VSD(LS) 0.9 0.8 0.7 1.5 1.1 0.9 V IOUT = 9 A Tj = -40 °C Tj = 25 °C Tj = 150 °C

Data Sheet 12 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Description and Characteristics

5.2.2 Switching Times

Figure 7 Definition of swit ching times high side (Rload to GND) Figure 8 Definition of switching times low side (R load to VS) Due to the timing differences for the rising and the falling edge there will be a slight difference between the length of the input pulse and the length of the output pulse. It can be calculated using the following formulas:

• ΔtHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS))
• ΔtLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)). IN VOUT t t 90% 10% ΔVOUT 90% 10% tdr(HS) tr(HS) tdf(HS) tf(HS) ΔVOUT IN VOUT t t 90% 10% 90% 10% ΔVOUT tdf(LS) tf(LS) ΔVOUT tdr(LS) tr(LS)

Data Sheet 13 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Description and Characteristics

5.2.3 Power Stages - Dynamic Characteristics

VS = 13.5 V, Tj = -40 °C to +150 °C, Rload = 2 Ω, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. High Side Switch Dynamic Characteristics

5.2.7 Rise-Time of HS

tr(HS) 0.5 1.6 µs RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ

5.2.8 Slew Rate HS on 1)

1) Not subject to production test, calculated value; | ΔVOUT|/ tr(HS) or |-ΔVOUT|/ tf(HS) ΔVOUT/ tr( HS) 6.8 10.8 5.4 2.2 21.6 5.4 V/µs RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ

5.2.9 Switch on Delay Time HS tdr(HS)

1.5 3.1 4.4 4.5 µs RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ

5.2.10 Fall-Time of HS tf(HS)

0.5 1.6 µs RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ

5.2.11 Slew Rate HS off 1) -ΔVOUT/

tf(HS) 6.8 10.8 5.4 2.2 21.6 5.4 V/µs RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ

5.2.12 Switch off Delay Time HS tdf(HS)

2.4 3.4 µs RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ

Data Sheet 14 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Description and Characteristics VS = 13.5 V, Tj = -40 °C to +150 °C, Rload = 2 Ω, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Low Side Switch Dynamic Characteristics

5.2.13 Rise-Time of LS tr(LS)

0.4 0.9 1.4 µs RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ

5.2.14 Slew Rate LS switch off 1)

1) Not subject to production test, calculated value; | ΔVOUT|/ tr(LS) or |-ΔVOUT|/ tf(LS) ΔVOUT/ tr(LS) 7.7 5.4 2.2 5.4 V/µs RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ

5.2.15 Switch off Delay Time LS tdr(LS)

0.6 1.3 2.2 µs RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ

5.2.16 Fall-Time of LS tf(LS)

0.5 1.5 µs RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ

5.2.17 Slew Rate LS switch on 1) - ΔVOUT/

tf(LS) 7.2 10.8 5.4 2.2 21.6 5.4 V/µs RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ

5.2.18 Switch on Delay Time LS tdf(LS)

5.6 µs RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ

Data Sheet 15 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Description and Characteristics

5.3 Protection Functions

The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data s heet. Fault conditions are considered as “outside” normal operating range. Protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation (Chapter 5.3.4). In a fault condition the BTN7960 will apply the highest slew rate possible independent of the connected slew rate resistor. Overvoltage, overtemperature and overcurrent are indicated by a fault current IIS(LIM) at the IS pin as described in the paragraph “Status Flag Diagnosis With Current Sense Capability” on Page 19 and Figure 12. In the following the protection functions are listed in order of their priority. Overvoltage lock out overrides all other error modes.

5.3.1 Overvoltage Lock Out

To assure a high immunity against overvoltages (e.g. load dump conditions) the device shuts the lowside MOSFET off and turns the highside MOSFET on, if the supply voltage is exceeding the over voltage protection level VOV(OFF). The IC operates in normal mode again with a hysteresis VOV(HY) if the supply voltage decreases below the switch- on voltage VOV(ON). In H-bridge conf iguration, this behavior of the BTN7 960 will lead to freew heeling in highside during over voltage.

5.3.2 Undervoltage Shut Down

To avoid uncontrolled motion of the driven motor at low vo ltages the device shuts off (o utput is tri-state), if the supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON).

5.3.3 Overtemperature Protection

The BTN7960 is protected against overtemperature by an integrated temperature sensor. Overtemperature leads to a shut down of both output stages. This state is latched until the device is reset by a low signal with a minimum length of treset at the INH pin, provided that its temperature has decreased at least the thermal hysteresis ΔT in the meantime. Repetitive use of the overtemperature protection impacts lifetime.

5.3.4 Current Limitation

The current in the bridge is measured in both switches. As soon as the current in forward direction in one switch (high side or low side) is reaching the limit ICLx, this switch is deactivated and the other switch is activated for tCLS. During that time all changes at the IN pin are ignored. However, the INH pin can still be used to switch both MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the IS pin is reset after 2 *tCLS. Unintentional triggering of the current limitation by shor t current spikes (e.g. inflic ted by EMI coming from the motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the effective current limitation level ICLx depends on the slew rate of the load current dI/dt as shown in Figure 10.

Data Sheet 17 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Description and Characteristics Figure 11 Typical Current Limitation Detection Levels vs. Supply Voltage In combination with a typical inductive load, such as a motor, this resu lts in a switched m ode current limitation. This method of limiting the curren t has the advantage of greatly redu ced power dissipation in the BTN7960 compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device.

5.3.5 Short Circuit Protection

The device is short circuit protected against

• output short circuit to ground
• output short circuit to supply voltage
• short circuit of load The short circuit protection is realized by the previously described current limitation in combination with the over- temperature shut down of the device. High Side Switch VS [V] ICL H [A] 4 6 81 01 2 1 41 6 1 8 2 0 Tj = 150°C Tj = 25°C Tj = -40°C Low Side Switch VS [V] ICL L [A] 4 6 81 01 21 4 1 61 82 0 Tj = -40°C Tj = 25°C Tj = 150°C

Data Sheet 18 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Description and Characteristics

5.3.6 Electrical Characteris tics - Protection Functions

VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limi t Values Unit Conditions Min. Typ. Max. Under Voltage Shut Down 5.3.1 Switch-ON Voltage VUV(ON) ––5 . 5 V VS increasing 5.3.2 Switch-OFF Voltage VUV(OFF) 4.0 – 5.4 V VS decreasing 5.3.3 ON/OFF hysteresis VUV(HY) –0 . 2 –V – Over Voltage Lock Out

5.3.4 Switch-ON Voltage

VOV(ON) 27.8 – – V VS decreasing

5.3.5 Switch-OFF Voltage VOV(OFF) 28 – 30 V VS increasing

5.3.6 ON/OFF hysteresis VOV(HY) –0 . 2 –V – Current Limitation

5.3.7 Current Limitation Detection level

ICLH0 45 62 80 A VS = 13.5 V

5.3.8 Current Limitation Detection level

ICLL0 33 47 60 A VS = 13.5 V Current Limitation Timing 5.3.9 Shut OFF Time for HS and LS tCLS 70 115 210 µs VS = 13.5 V Thermal Shut Down

5.3.10 Thermal Shut Down Junction

TjSD 155 175 200 °C–

5.3.11 Thermal Switch ON Junction

TjSO 150 – 190 °C–

5.3.12 Thermal Hysteresis ΔT –7–K –

5.3.13 Reset Pulse at INH Pin (INH low) treset 4––µ s–

Data Sheet 19 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Description and Characteristics

5.4 Control and Diagnostics

5.4.1 Input Circuit

The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs. Setting the INH pi n to high enables the device. In this condition one of the two power switches is switched on depending on the status of the IN pin. To deactivate both switches, the INH pin has to be set to low. No external driver is needed. The BTN7960 can be interfaced directly to a microcontroller, as long as the maximum ratings in Chapter 4.1 are not exceeded.

5.4.2 Dead Time Generation

In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, generating a so called dead time between switching off one MOSFET and switching on the other. The dead time generated in the driver IC is automatically adjusted to the selected slew rate.

5.4.3 Adjustable Slew Rate

In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an external resistor. The slew rate pin SR allows the user to op timize the balance between emission and power dissipation within his own application by connecting an external resistor RSR to GND.

5.4.4 Status Flag Diagnosis Wi th Current Sense Capability

The status pin IS is used as a combined current sense and error flag output. In normal operation (current sense mode), a current source is connected to the status pin, which delivers a current proportional to the forward load current flowing through the active high side switch. If the high side switch is inactive or the current is flowing in the reverse direction no current will be driven except for a marginal leakage current IIS(LK). The external resistor RIS determines the voltage per output curr ent. E.g. with the nominal value of 8.5k for the current sense ratio kILIS = IL / IIS, a resistor value of RIS = 1 kΩ leads to VIS = (IL / 8.5 A)V. In case of a fault condition the status output is connected to a current source which is i ndependent of the load current and provides IIS(lim). The maximum voltage at the IS pin is determined by the choice of the external resistor and the supply voltage. In case of current limitation the IIS(lim) is activated for 2 * tCLS. Figure 12 Sense Current and Fault Current Normal operation: current sense mode Fault condition: error flag mode VS RIS IIS~ ILoad ESD-ZD VIS Sense output logic IS RIS IS VISIIS(lim) IIS(lim) VS ESD-ZD Sense output logic IIS~ ILoad

Data Sheet 20 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Description and Characteristics Figure 13 Sense Current vs. Load Current

5.4.5 Truth Table

Device State Inputs Outputs Mode INH IN HSS LSS IS Normal Operation 0 X OFF OFF 0 Stand-by mode 1 0 OFF ON 0 LSS active 1 1 ON OFF CS HSS active Over-Voltage (OV) X X ON OFF 1 Shut-down of LSS, HSS activated, error detected Under-Voltage (UV) X X OFF OFF 0 UV lockout Overtemperature or Short Circuit of HSS or LSS

0 X OFF OFF 0 Stand-by mode, reset of latch

1 X OFF OFF 1 Shut-down with latch, error detected

Current Limitation Mode 1 1 OFF ON 1 Switched mode, error detected 1) Will return to normal operation after tCLS; Error signal is reset after 2*tCLS (see Chapter 5.3.4) 1 0 ON OFF 1 Switched mode, error detected 1) Inputs Switches Status Flag IS 0 = Logic LOW OFF = switched off CS = Current sense mode 1 = Logic HIGH ON = switched on 1 = Logic HIGH (error) X = 0 or 1 IL [A] IIS(lim) IIS [mA] ICLx Error Flag Mode lower kilis value higher kilis value Current Sense Mode (High Side)

Data Sheet 21 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Block Description and Characteristics

5.4.6 Electrical Characteristi cs - Control and Diagnostics

VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. Control Inputs (IN and INH)

5.4.1 High level Voltage

INH, IN VINH(H) VIN(H) 1.75 1.6 2.15

5.4.2 Low level Voltage

INH, IN VINH(L) VIN(L) 1.1 1.4 – V –

5.4.3 Input Voltage hysteresis VINHHY

mV –

5.4.4 Input Current high level IINH(H)

IIN(H) –3 0 1 5 0 µ A VIN = VINH = 5.3 V

5.4.5 Input Current low level IINH(L)

IIN(L) –2 5 1 2 5 µ A VIN = VINH = 0.4 V Current Sense

5.4.6 Current Sense ra tio in static on-

kILIS = IL / IIS kILIS 5.5 8.5 8.5 8.5 11.5 12.5

3 RIS = 1 kΩ

IL = 30 A IL = 15 A IL = 5 A

5.4.7 Maximum analog Sense Current,

Sense Current in fault Condition IIS(lim) 456 . 5 m A VS = 13.5 V RIS = 1kΩ

5.4.8 Isense Leakage current IISL ––1µ A VIN = 0 V or

VINH = 0 V

5.4.9 Isense Leakage current,

IISH –18 0 µ A VIN = VINH = 5 V IL = 0 A

Data Sheet 22 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960

Application Information

6 Application Information

Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device.

6.1 Application Example

Figure 14 Application Example: H-Bridge with two BTN7960 Note: This is a simplified example of an application circuit. The function must be verified in the real application.

6.2 Layout Considerations

Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The BTN7960 has no separate pin for power ground and logic ground. Therefore it is recommended to assure that the offset between the ground connection of the slew rate re sistor, the current sense resistor and ground pin of the device (GND / pin 1) is minimized. If the BTN7960 is used in a H-bridge or B6 bridge design, the voltage offset between the GND pins of the different devices should be small as well. A ceramic capacitor from VS to GND close to each device is recommended to provide current for the switching phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable value for this capacitor would be about 470 nF. The digital inputs need to be protected from excess cu rrents (e.g. caused by induced voltage spikes) by series resistors in the range of 10 kΩ. VS OUT INH IN IS SR GND BTN7960 VS OUT INH IN IS SR GND BTN7960 M XC866 TLE 4278G VS I/O Reset Vd d Vss WO RO Q D GND I IPB 100P03P3L -04 Microcontroller Reverse Polarity Protection Voltage Regulator High Current H-Bridge I/O I/O I/O I/O CSc1 470nF CD 47nF CQ 22µF CS 470µF 1kΩ DZ1 10V CSc2 470nF RIN1 10kΩ RIN2 10kΩ RINH2 10kΩ RINH1 10kΩ RSR1 0..51kΩ RIS12 470Ω RSR2 0..51kΩ

Data Sheet 23 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960

6.3 Half-bridge Configuration Considerations

Please note that, if the BTN7960 is used in a half-bridge configuration with the load connected between OUT and GND and the supply voltage is exceedi ng the Overvoltage Switch-OFF level VOV(OFF), the implemented “Overvoltage Lock Out” feature leads to automatically turning on the high side s witch, while turning off the low side switch, and therefore connecting the load to VS; independently of the current IN- and INH-pin signals (see also “Truth Table” on Page 20). This will lead to current flowing through the load, if not otherwise configured. It shall be insured that the power dissipated in the NovalithIC™ does not exceed the maximum ratings. For further explanations see the application note “BTN79x0 Over Voltage (OV) Operation”. Figure 15 Application Example: Half-Bri dge with a BTN7960 (Load to GND) Note: This is a simplified example of an application circuit. The function must be verified in the real application. M TLE 4278G VS I/O Reset Vdd Vss WO RO Q D GND I IPB 100P03P3L- Microcontroller Reverse Polarity Protection Voltage Regulator High Current Half-Bridge I/O I/O I/O VS OUT INH IN IS SR GND BTN7960 CS 470µF 1kΩ DZ1 10V CSc 470nF RIN 10kΩ RINH 10kΩ RSR 0..51kΩ RIS 1kΩ CQ 22µF CD 47nF XC866

Data Sheet 24 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Package Outlines

7 Package Outlines

7.1 PG-TO263-7-1

Figure 16 PG-TO263-7-1 (Plastic Green Transistor Single Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). A BA0.25 M 0.1 Typical ±0.210 8.5 1) 7.551) (15) ±0.29.25 ±0.31 0...0.15 7 x 0.6 ±0.1 ±0.1 GPT09114 1.27 4.4 B 0.5±0.1 ±0.32.7 4.7±0.5 0.05 0.1 Metal surface min. X = 7.25, Y = 6.9 2.4 1.27 All metal surfaces tin plated, except area of cut. 0...0.3 B 6 x 8˚ MAX. 8.42 10.8 9.4 16.15 4.6 0.47 0.8 Footprint For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Dimensions in mm

Data Sheet 25 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Package Outlines

7.2 PG-TO220-7-11

Figure 17 PG-TO220-7-11 (Plastic Green Transistor Single Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). ±0.11.27 4.4 9.25±0.20.05 2.4 0.5±0.1 ±0.38.6 10.2 ±0.3 ±0.43.9 ±0.48.4 3.7±0.3 A A0.25 M 2.8 15.65±0.3 12.95 0...0.15 1.27 0.6 ±0.1 C ±0.2 17 ±0.3 8.51) 9.9±0.2 7 x -0.153.7 10±0.2 6 x C 1.6±0.3 All metal surfaces tin plated, except area of cut. Metal surface min. X = 7.25, Y = 12.3 Typical1) 0...0.3 For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Dimensions in mm

Data Sheet 26 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960 Package Outlines

7.3 PG-TO220-7-12

Figure 18 PG-TO220-7-12 (Plastic Transistor Single Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). A BA0.25 M 9.9±0.2 15.65±0.3 12.95 0...0.15 1.27 0.6 ±0.1 ±0.11.27 4.4 B 9.25±0.2 0.05 C 17±0.3 8.51) 10±0.2 C 2.4 0.5±0.1 13 ±0.5 ±0.511 7 x 0...0.3 6 x All metal surfaces tin plated, except area of cut. Metal surface min. X = 7.25, Y = 12.3 1) Typical 2.4 3.7-0.15 ±0.22.8 For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Dimensions in mm

Data Sheet 27 Rev. 1.1, 2007-11-21 High Current PN Half Bridge BTN7960

Revision History

8 Revision History

1.1 2007-11-21 New packages added; 1.0 2007-11-06 Initial version Data Sheet

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