BTD1383L3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

CYStech Electronics Corp. Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 1/4 BTD1383L3 CYStek Product Specification General Purpose NPN Epitaxial Planar Transistor BTD1383L3

Description

  • The BTD1383L3 is a darlington amplifier transistor. Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 40 V Collector-Emitter V oltage V CES 32 V Emitter-Base V oltage V EBO 10 V Collector Current (DC) I C 0.3 A Collector Current (Pulse) I CP 1.5 (Note 1) A Power Dissipation @TA=25°C Pd 1.5 (Note 2) W Thermal Resistance, Junction to Ambient R θJA 83.3 (Note 2) °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1.Single pulse test, PW=10ms 2 .Device mounted on a glass epoxy printed circuit board 1.575 in × 1.575 in × 0.059 in : mounting pad for the collector lead min 0.93 in². BTD1383L3 B：Base C：Collector E：Emitter B C E SOT-223 B C C E

CYStech Electronics Corp. Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 2/4 BTD1383L3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 40 - - V I C=100µA BVCES 32 - - V IC=1mA, RBE=0Ω BVEBO 10 - - V I E=100µA ICBO - - 100 nA V CB=30V IEBO - - 100 nA V EB=10V *VCE(sat) - - 1.5 V I C=200mA, IB=0.4mA *hFE1 10K - - V CE=5V , IC=10mA *hFE2 20K - - V CE=5V , IC=100mA fT - 250 - MHz V CE=5V , IC=10mA, f=100MHz Cob - 5 - pF V CB=10V , IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 3/4 BTD1383L3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 10K 100K 1000K 1 10 100 1000 Collector Current---IC(mA) Current Gain---HFE HFE@VCE=5V Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 Collector Current ---IC(mA) Saturation Voltage---(mV) VCE(SAT)@IC=1000IB On Voltage vs Collector Current 100 1000 10000 1 10 100 1000 Collector Current ---IC(mA) On Voltage --- (mV) VBE(ON)@VCE=5V Power Derating Curve 0.5 1.5 0 50 100 150 200 Ambient Temperature ---Ta(℃ ) Power Dissipation---PD(W) See Note 2 on page 1

CYStech Electronics Corp. Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 4/4 BTD1383L3 CYStek Product Specification SOT-223 Dimension *: Typical D 0.0236 0.0315 0.60 0.80 a1 *13 o - *13 o - E *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o F 0.2480 0.2638 6.30 6.70 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 321 F B A C D E G H a1 I Style: Pin 1.Base 2.Collector 3.Emitter Marking: 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 WA