BTC5094N3

BTC5094N3 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

Features

• Low Noise and High Gain:
• NF=1.4dB, TYP . @ VCE=2V, Ic=4.2mA, f=0.9GHz Ga=12dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz ∣S21∣² =13.5dB @ VCE =5V, Ic =4.5mA, f=0.9GHz

Applications

• Low noise and high gain amplifiers & Oscillator buffer amplifiers
• Cordless Phone : LNA , MIX ,and OSC
• Remote Cotroller Absolute Maximun Ratings
• Maximum Ratings (Ta=25°C) Parameters Symbol Limits Unit Collector-Emitter Breakdown Voltage V CEO 10 V Collector-Base Breakdown Voltage V CBO 18 V Emitter-Base Breakdown Voltage V EBO 2.5 V Collector Current I C 20 *1 mA Collector Power Dissipation Pd 150 mW Junction Temperature T j 125 °C Storage Temperature T stg -50~125 °C Note: *1 Here we define the point DC current gain drops off. SOT-23 BTC5094N3 B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 2/8 BTC5094N3 CYStek Product Specification

Electrical Characteristics

• Characterization Information (Ta=25°C) Parameters Conditions Symbol Min Typ. Max Unit Collector Cutoff Current V CB =3V, IE=0 I CBO - - 1 uA Emitter Cutoff Current V EB =1V I EBO - - 1 uA VCE =2V, IC =1mA h FE(1) 52 - 270 - DC Current Gain VCE =6V, IC =7mA h FE(2) 52 - - - VCE =1V, IC =10mA - 7.6 - GHz Cutoff Frequency VCE =3V, IC =12mA fT - 9 - GHz VCE =2V, IC =4.2mA, f =0.9GHz - 12.8 - dB Insertion Gain |S21|2 In 50 Ohm system VCE =5V, IC =4.5mA, f =0.9GHz |S21|2 - 13.5 - dB Output Capacitance V CB =10V, IE=0, f = 0.9GHz Cob - 0.7 1.0 pF Classification Of hFE(1) Rank K P Q Range 52~120 82~180 120~270 S-Parameters
• VC=2V, IC=4.2mA, IB=60uA FREQ. S11 S21 S12 S22 (GHz) Mag Ang Mag A ng Mag Ang Mag Ang

CYStech Electronics Corp. Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 3/8 BTC5094N3 CYStek Product Specification

• VC=5V, IC=4.5mA, IB=60uA FREQ. S11 S21 S12 S22 (GHz) Mag Ang Mag A ng Mag Ang Mag Ang
• Smoothed noise data (VC=2V, IC=4.2mA, IB=60uA) FREQ. FMIN GAMMA OPT Rn Ga F50-S F50-M G50 (GHz) (dB) Mag Ang (To 50) (dB) (dB) (dB) (dB)

CYStech Electronics Corp. Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 4/8 BTC5094N3 CYStek Product Specification

• Smoothed noise data (VC=5V, IC=4.5mA, IB=60uA) FREQ. FMIN GAMMA OPT Rn Ga F50-S F50-M G50 (GHz) (dB) Mag Ang (To 50) (dB) (dB) (dB) (dB) HSPICE 2G.6 Model
• NPN BJT Parameters IS=1.444E-16 (A) IKR=10.0E-3 MJE=0.3882 TR=1.0E-9 (Sec) BF=85.9 ISC=1.21E-16 TF=1.22E-11 (Sec) CJS=2.43E-13 (F) NF=1.0 NC=1.01 XTF=1.70 VJS=0.5734 (V) VAF=45.9 (V) RB=4.30 (Ohm) VTF=0.69 (V) MJS=0.3798 IKF=160.3E-3 (A) IRB=20.0E-3 (A) ITF=0.1 (A) XTB=0.0 ISE=2.0E-18 (A) RBM=2.78 (Ohm) PTF=10.0 (deg) EG=1.11 (eV) NE=2.0 RE=1.011 (Ohm) CJC=2.38E-13 (F) XTI=3.0 BR=18.54 RC=16.69 (Ohm) VJC=0.7 (V) FC=0.9 NR=1.01 CJE=6.04E-13 (F) MJC=0.4474 TNOM=25 (°C) VAR=6.299 VJE=1.003 (V) XCJC=0.3
• B’-E’ DIODE Parameters IS=1.0E-22 (A) CJO=1.0E-15 (F) XTI=3.0 KF=0.0 RS=10.0 (Ohm) VJ=1.003 (V) FC=0.9 AF=1.0 N=1.0 M=0.3882 BV=0.0 (V) TNOM=25 (°C) TT=0.0 (Sec) EG=1.11 (eV) IBV=1.0E-3 (A)
• C’-S’ DIODE Parameters IS=1.0E-22 (A) CJO=1.0E-15 (F) XTI=3.0 KF=0.0 RS=0.0 (Ohm) VJ=0.5734 (V) FC=0.5 AF=1.0 N=1.0 M=0.3798 BV=0.0 (V) TNOM=27 (°C)

CYStech Electronics Corp. Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 5/8 BTC5094N3 CYStek Product Specification TT=0.0 (Sec) EG=1.11 (eV) IBV=1.0E-3(A)

• Other Parasitic Parameters REX=0.0 (Ohm) R SS=10.0 (Ohm) C2=150 (fF) L1=0.5 (nH) RBX=0.0 (Ohm) R SC=250.0 (Ohm) C3=80 (fF) L2=0.5 (nH) RCX=0.0 (Ohm) C SP=20.89 (fF) Le=0.6 (nH) L3=0.6 (nH) RSX=5.0 (Ohm) C SC=41.79 (fF) Lb=0.85 (nH) RSP=450.0 (Ohm) C1=70 (fF) Lc=0 (nH) Transistor Chip Equivalent Circuit Package Equivalent Circuit B RBX E Rsp REX 0.1nH G-P RSS CSP C RSC RSX CSC Transistor Chip Collector Base Emitter C1 C2 LC L 2 Le Lb L1 B C E S

CYStech Electronics Corp. Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 6/8 BTC5094N3 CYStek Product Specification Characteristics Curve Fig.1 Typical Forward Gummel Plot 1.00E-10 1.00E-09 1.00E-08 1.00E-07 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 Base-Emitter Bias Voltage (V) Collector and Base Currents (A) VCE=1V Fig.2 Typical Forward Current Gain & Collector Current 100 Collector Current (A) Current Gain VCE=1V Fig.3 Typical Output Characteristics 0.0E+00 1.0E-03 2.0E-03 3.0E-03 4.0E-03 5.0E-03 012345 Collector Voltage (V) Collector Currennt (A) Ib=10uA Ib=20uA Ib=30uA Ib=40uA Ib=50uA Fig.4 Typical fT & Collector Current 0.0E+00 1.0E+09 2.0E+09 3.0E+09 4.0E+09 5.0E+09 6.0E+09 7.0E+09 8.0E+09 9.0E+09 1.0E+10 Collector Current (A) Cutoff Frequency (Hz) Vce = 1V Vce = 3 V Fig.5 Typical NFmin & Collector Current 0.5 1.5 2.5 3.5 4.5 0.1 1 10 100 Collector Current (mA) NFmin (dB) VCE=2V Fig.6 Typical Associated Gain & Collector Current 0.1 1 10 100 Collector Current (mA) Associated Gain (dB) VCE=2V

CYStech Electronics Corp. Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 7/8 BTC5094N3 CYStek Product Specification Fig.7 Capacitance & Reverse-Biased Voltage 0.1 0.1 1 10 Reverse Biased Voltage (V) Capacitance (pF) Cob

CYStech Electronics Corp. Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 8/8 BTC5094N3 CYStek Product Specification SOT-23 Dimension *: Typical H 0.0005 0.0040 0.013 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. H JKD A L GV C B S Style: Pin 1.Base 2.Emitter 3.Collector Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3