BTC4505N3

BTC4505N3 COMCHIP | Alldatasheet

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High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA C Parameter Symbol COLLECTOR BASE EMITTER Limit Collector-Base Voltage V CBO 400 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage V EBO 6 V Collector Current I C 300 mA Power Dissipation Pd 0.225 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Unit SOT-23 Dimensions in inches (millimeters) .006 (0.15)max. .119 (3.0) .006 (0.15)max. .119 (3.0) .006 (0.15)max. .119 (3.0) .006 (0.15)max. .119 (3.0) .006 (0.15)max. .119 (3.0) .006 (0.15)max. .119 (3.0) .006 (0.15)max. .119 (3.0) .006 (0.15)max. .119 (3.0) .006 (0.15)max. .119 (3.0) .006 (0.15)max. .119 (3.0) .006 (0.15)max. .119 (3.0) .006 (0.15)max. .119 (3.0) .006 (0.15)max. .119 (3.0) T op ViewT op ViewT op ViewT op View .006 (0.15) .044 (1.10) .006 (0.15) .044 (1.10) .006 (0.15) .044 (1.10) .006 (0.15) .044 (1.10) .006 (0.15) .044 (1.10) .006 (0.15) .044 (1.10) .006 (0.15) .044 (1.10) .006 (0.15) .044 (1.10) .006 (0.15) .044 (1.10) .006 (0.15) .044 (1.10) .006 (0.15) .044 (1.10) .006 (0.15) .044 (1.10) .006 (0.15) .044 (1.10) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) .110 (2.8) .047 (1.20) .002 (0.05) .086 (2.2) .035 (0.90) MDS0405003A

www.comchiptech.com COMCHIP Page 2MDS0405003A High Voltage Transistor (NPN) Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 400 - - V I C=50µA, IE=0 BVCEO 400 - - V I C=1mA, IB=0 BVEBO 6 - - V I E=50µA, IC=0 ICBO - - 10 µA V CB=400V, IE=0 ICER - - 20 nA VCE=300V, REB=4kӨ IEBO - - 10 µA V EB=6V,IC=0 *VCE(sat) - 0.1 0.5 V I C=10mA, IB=1mA *VBE(sat) - 1.5 V I C=10mA, IB=1mA hFE 52 - 270 - V CE=10V, IC=10mA fT - 20 - MHz V CE=10V, IC=10mA, f=10MHz Cob - 7 - pF V CB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank K P Q Range 52~120 82~180 120~270

www.comchiptech.com COMCHIP Page 3MDS0405003A Characteristic Curves ˄˃˃ ˄˃˃˃ ˩˖˘ʳːʳˈ˩ ˄˃˃ ˄˃˃˃ ˄˃˃ ˄˃˃˃ ˄˃˃ ˄ˈ˃ ˅˃˃ ˅ˈ˃ M High Voltage Transistor (NPN)