BTA04 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Symbol Parameter Value Unit IT(RMS) RMS on-state current (360° conduction angle) BTA Tc = 90 °C4 A BTB Tc = 95 °C ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C) tp = 8.3 ms 42 A tp = 10 ms 40 I2tI 2t value tp = 10 ms 8 A 2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 50mA di G /dt = 0.1A/µs Repetitive F = 50 Hz

10 A/ µs

Storage and operating junction temperature range - 40 to + 150 - 40 to + 110 Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TO220AB (Plastic) A2 G .VERY LOW IGT = 10mA max .LOW IH = 15mA max .BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734)

DESCRIPTION

Symbol Parameter BTA / BTB04- Unit

400 T/D/S/A 600 T/D/S/A 700 T/D/S/A

Repetitive peak off-state voltage Tj = 110°C 400 600 700 V ABSOLUTE RATINGS (limiting values)

FEATURES

The BTA/BTB04 T/D/S/A triac family are high per- formance glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where gate high sensitivity is required. Application on 4Q such as phase control and static switching.

GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 °C/W Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W BTB 3.2 Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) BTA 3.3 °C/W BTB 2.4 Symbol Test Conditions Quadrant Suffix Unit TDSA IGT VD =12V (DC) R L=33Ω Tj=25°C I-II-III MAX 5 5 10 10 mA IV MAX 5 10 10 25 VGT VD =12V (DC) R L=33Ω Tj=25°C I-II-III-IV MAX 1.5 V VGD VD =V DRM R L=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V tgt V D =V DRM IG = 40mA dIG /dt = 0.5A/µs Tj=25°C I-II-III-IV TYP 2 µs IL IG= 1.2 IGT Tj=25°C I-III-IV TYP 10 10 20 20 mA II 20 20 40 40 IH *I T= 100mA gate open Tj=25 °C MAX 15 15 25 25 mA VTM *I TM = 5.5A tp= 380µs Tj=25 °C MAX 1.65 V IDRM IRRM VDRM Rated VRRM Rated Tj=25°C MAX 0.01 mA Tj=110°C MAX 0.75 dV/dt * Linear slope up to VD =67%V DRM gate open Tj=110°C TYP 10 10 - - V/ µs MIN - - 10 10 (dV/dt)c * (dI/dt)c = 1.8A/ms Tj=110 °C TYP 1 1 5 5 V/ µs * For either polarity of electrode A2 voltage with reference to electrode A1. PG (AV)=1 W P GM = 40W (tp = 20µs) I GM = 4A (tp = 20µs) V GM = 16V (tp = 20µs).

ELECTRICAL CHARACTERISTICS

BTA04 T/D/S/A / BTB04 T/D/S/A

Package I T(RMS) VDRM /V RRM Sensitivity Specification AV T D S A BTA (Insulated) 4 400 X X X X

600 X X X X

700 X X X X

(Uninsulated)

400 X X X X

ORDERING INFORMATION

Fig.1 :Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig.4 :RMS on-state current versus case temperature.Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). BTA04 T/D/S/A / BTB04 T/D/S/A

Fig.6 :Relative variation of gate trigger current and holding current versus junction temperature. Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Fig.8 :Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.9 :On-state characteristics (maximum values). 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.1 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig.5 :Relative variation of thermal impedance versus pulse duration. BTA04 T/D/S/A / BTB04 T/D/S/A

Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 10.20 10.50 0.401 0.413 B 14.23 15.87 0.560 0.625 C 12.70 14.70 0.500 0.579 D 5.85 6.85 0.230 0.270 F 4.50 0.178 G 2.54 3.00 0.100 0.119 H 4.48 4.82 0.176 0.190 I 3.55 4.00 0.140 0.158 J 1.15 1.39 0.045 0.055 L 0.35 0.65 0.013 0.026 M 2.10 2.70 0.082 0.107 N 4.58 5.58 0.18 0.22 O 0.80 1.20 0.031 0.048 P 0.64 0.96 0.025 0.038 I A G D B C F P N O M L J H Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. BTA04 T/D/S/A / BTB04 T/D/S/A