BTB04T ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc Triacs BTB04 T/D/S/A
FEATURES
- With TO-220AB non insulated package
- Suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT IT(RMS) RMS on-state current (full sine wave)Tj=95℃ 4 A ITSM Non-repetitive peak on-state current tp=10ms 40 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermal resistance, junction to case 3.2 ℃/W Rth(j-a) Thermal resistance, junction to ambient 60 ℃/W SYMBOL PARAMETER 400T/D/S/A 600T/D/S/A 700T/D/S/A UNIT VDRM Repetitive peak off-state voltage 400 600 700 V VRRM Repetitive peak reverse voltage 400 600 700 V ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MAX UNIT IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=110℃ 0.01 0.5 mA IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=110℃ 0.01 0.5 mA IGT Gate trigger current Ⅰ-Ⅱ-Ⅲ VD=12V; RL= 33Ω T D S A mA5 5 10 10 Ⅳ 5 10 10 25 IH Holding current I GT= 0.1A, Gate Open 15 15 25 25 mA VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω 1.5 V VTM On-state voltage I T= 5A 1.65 V