BTB04-800SW

BTA04 LUGUANG | Alldatasheet

Document overview

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Technical content

4A Ⅲ&ⅣSERIES TRIACS http://www.lgesemi.com Revision:20230619-P1 m a i l : l g e @ l g e s e m i . c o m F e a t u r e s ◇The LGE BTA04/BTB04, 4A Ⅲ & Ⅳquadrants series triacs ,which can be operated in Ⅲ & Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blocking voltage and high temperature stability.

Applications

The LGE BTA04/BTB04 is suitable for inductive load switching operations,also can be used in ON/OFF function applications such as washing machine,induction motor starting circuits,vacuum cleaners,power tools and other motors such as speed control maker; heating regulation, solid state relay; phases control circuit ; AC motor speed regulation,and so on. Mechanical Data ◇ Moisture Sensitivity: MSL Level 1,per J-STD-020 ◇ Terminals:Matte Tin Finish. Solderable per MIL-STD-202 Method 208 ◇ Case Material：Molded Plastic; ◇ Molding compound meet UL Flammability Classification Rating 94V-0 ◇ Case:JEDEC TO-220AB,ITO-220AB,TO-252 MAXIMUM RATING Ratings at 25℃ ambient tepmerature unle ss otherwise specified. PARAMETER SYMBOL VALUE UNITS R.M.S. On-State Current BTA BTB Tc=80℃ Tc=90℃ IT(RMS) 4 A Non-Repetitive Surge Peak On-State Current(fFull Cycle,Tj initial=25℃) F=50HZ T=20ms I TSM 4 0 A F=60HZ T=16.7ms 41 I2t Value for Fusing tp=10ms I 2t 8 A 2s Critical Rate of Rise of On-State Current IG=2×IGT，tr≤100ns F=120HZ Tj=125℃ di/dt 50 A/μs Repetitive peak Off-State voltage Tj=25℃ VDRM/VRRM 600/800 V Non repetitive surge peak off-state voltage tp=10ms Tj=25℃ VDSM/VRSM V DRM/VRRM+100 V Peak Gate Current tp=20μs Tj=125℃ IGM 4 A Average Gate Power Dissipation Tj=125℃ PG(AV) 1 W Typical Thermal Resistance (Junction to Ambient) TO-220AB/ITO-220AB RΘJA 60 ℃/W TO-252 100 Typical Thermal Resistance(Junction to Case (AC)) TO-220AB(Non-ins) RΘJC 2.5 ℃/W TO-220AB Ins 3.1 ITO-220AB 3.4 TO-252 2.8 Maximum Operating Junction temperature T J -40~+125 ℃ Storage temperature range T STG -40~+150 ℃ TO-252 ITO-220AB TO-220AB

4A Ⅲ&ⅣSERIES TRIACS http://www.lgesemi.com Revision:20230619-P2 m a i l : l g e @ l g e s e m i . c o m ELECTRICAL CHARACTERISTICS(Ⅲ QUADRANTS) PARAMETER TEST CONDITIONS Symbol VALUES Units TW SW CW BW Gate Trigger Current VD=12V,RL=100 Ω (ⅠⅡⅢquadrant) IGT MAX 5 10 35 50 mA Gate Trigger Voltage V GT M A X 1 . 5 V Gate Non-Trigger Voltage Tj=125 ℃(ⅠⅡⅢquadrant) VGD M I N 0.2 V Holding Current I T=0.5A I H MAX 6 10 35 60 mA Latching Current I G=1.2IGT ⅠⅢ quadrant IL MAX 10 15 50 70 mA Ⅱquadrant MAX 15 25 60 80 Critical Rate of Rise of Off-State Voltage VD=2/3VDRM,Tj=125℃ dv/dt MIN 50 100 500 1000 V/ μs Critical Rate of Rise of Off-State Voltage at Commutation, Tj=125℃ (dv/dt)c MIN 1.8 2.7 2.5 10 V/ μs ELECTRICAL CHARACTERISTICS(Ⅳ QUADRANTS) PARAMETER TEST CONDITIONS SYMBOL VALUE UNITS C B Gate Trigger Current VD=12V,RL=100 Ω (ⅠⅡⅢⅣ quadrant) ⅠⅡⅢ IGT MAX 25 50 mA Ⅳ M A X 5 0 7 0 Gate Trigger Voltage All V GT M A X 1 . 5 V Gate Non-Trigger Voltage Tj=125 ℃(ⅠⅡⅢquadrant) VGD M I N 0.2 V Holding Current I T=0.5A I H M A X 4 0 6 0 m A Latching Current =1.2I GT ⅠⅢ Ⅳquadrant IL MAX 50 70 mA Ⅱquadrant MAX 70 90 Critical Rate of Rise of Off-State Voltage VD=2/3VDRM,Tj=125℃ dv/dt MIN 200 500 V/ μs Critical Rate of Rise of Off-State Voltage at Commutation, Tj=125℃ (dv/dt)c MIN 2.5 10 V/ μs STATIC CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL VALUE UNITS Peak On-State Voltage I TM=5.5A,tp=380μs,Tj=25℃ V TM MAX 1.55 V Threshold Voltage Tj=125 ℃ V TO MAX 0.85 V Dynamic Resistance Tj=125 ℃ Rd MAX 150 mΩ Repetitive Peak Off-Statte Curren VDRM=VRRM Tj=25℃ I DRM/ IRRM M A X 5 μA Tj=125℃ I DRM/IRRM M A X 0 . 5 m A

4A Ⅲ&ⅣSERIES TRIACS http://www.lgesemi.com Revision:20230619-P3 m a i l : l g e @ l g e s e m i . c o m RATING AND CHARACTERISTICS CURVES FIG.1: Maximum power dissipation versus RMS on-statecurrent FIG.2: RMS on-state current versus case temperature FIG.4:On-statecharacteristics(maximumvalues)FIG.3: Surge peak on-state current versus numberofcycles FIG.5: Non-repetitivesurgepeak on-state current forasinusoidal pulsewith width tp<20ms,and corresponging value of I2t (Ⅰ-Ⅱ-Ⅲ:dI/dt < 50A/μs;Ⅳ:dI/dt <10A/μs) FIG.6: Relative variations of gate trigger current,holding current and latching current versusjunction temperature

4A Ⅲ&ⅣSERIES TRIACS http://www.lgesemi.com Revision:20230619-P4 m a i l : l g e @ l g e s e m i . c o m PACKAGE OUTLINE DIMENSIONS TO-220AB units:mm ITO-220AB units:mm( ±0.10)

4A Ⅲ&ⅣSERIES TRIACS http://www.lgesemi.com Revision:20230619-P5 m a i l : l g e @ l g e s e m i . c o m PACKAGE OUTLINE DIMENSIONS T O - 2 5 2 u n i t s : m m

ORDERING INFORMATION

A=Insulated B=Non-insulated Current 04=4A Voltage 600=600V 800=800V Sensitivity and Type B = 5 0 m A B W = 5 0 m A C = 2 5 m A C W = 3 5 m A S W = 1 0 m A T W = 5 m A