BTB04-600SL STMICROELECTRONICS | Alldatasheet

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BTB04-600SL® March 2002 - Ed: 1A STANDARD 4A TRIAC The BTB04-600SL 4 quadrants TRIAC is intended for general purpose applications where high surge current capability is required, such as lighting, corded power tools, industrial. This TRIAC features a gate current capability sensitivity of 10mA.

DESCRIPTION

Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-220AB Tc = 105°C 4 A ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F=5 0H z t=2 0m s 3 5 A F = 60 Hz t = 16.7 ms 38 I2tI 2t value for fusing tp = 10ms 6 A 2s dI/dt Critical rate of rise of on-state current IG =2xI GT ,t r≤ 100 ns Repetitive F = 100Hz 50 A/µs IGM Peak gate tp = 20µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 0.5 W Tstg Tj Storage junction temperature range Operating junction temperature range -40 to +150 -40 to +125 ABSOLUTE MAXIMUM RATINGS G Symbol Value Unit IT(RMS) 4A VDRM /VRRM 600 V IGT(Q1) 10 mA MAIN FEATURES

Symbol Parameter Value Unit Rth (j-c) Junction to case (AC) 3 °C/W Rth (j-a) Junction to ambient 60 °C/W THERMAL RESISTANCE Symbol Test conditions Quadrant Value Unit IGT (1) VD = 12V R L =3 0Ω I - II - III MAX. 10 mA IV MAX. 25 VGT VD = 12V R L =3 0Ω ALL MAX. 1.3 V VGD VD =V DRM R L = 3.3kΩ Tj = 125°C ALL MIN. 0.2 V IH (2) IT = 100mA MAX. 15 mA IL IG = 1.2IGT I - III - IV MAX. 15 mA II 25 dV/dt(2) VD = 67% VDRM gate open Tj = 125°C MIN. 75 V/ µs (dV/dt)c(2) (dI/dt)c = 1.8A/ms Tj = 125°C MIN. 10 V/µs ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions Value Unit VTM (2) ITM = 5A tp = 380µs Tj = 25°C MAX. 1.5 V VTO (2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 100 m Ω IDRM IRRM VDRM =V RRM Tj = 25°C Tj = 125°C MAX. 5 µA mA Note 1:minimum IGT is guaranted at 5% of IGT max. Note 2:for both polarities of A2 referenced to A1. STATIC CHARACTERISTICS

Part Number Voltage Sensitivity Type Package BTB04-600SL 600V 10 mA Standard TO-220AB PRODUCT SELECTOR BT B 04 - 600 SL TRIAC SERIES INSULATION B: non insulated CURRENT: 4A VOLTAGE: 600V S: SENSITIVITY = 10mA L: LIGHTING APPLICATION

ORDERING INFORMATION

IT(RMS)(A) α =180° P(W) 180° α α Fig. 1:Maximum power dissipation versus RMS on-state current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 Tc(°C) α =180° IT(RMS)(A) Fig. 2: RMS on-state current versus case temperature. 1.E-03 1.E-02 1.E-01 1.E+00 tp(s) Zth(j-a) Zth(j-c) K = [Zth/Rth] Fig. 3:Relative variation of thermal impedance versus pulse duration. 100 0123456789 1 0 VTM(V) Tj=25°C Tj=125°C Tj max. : Vto = 0.85 V Rd = 100 mW ITM(A) Fig. 4:On-state characteristics (maximum values)

Tj(°C) (dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C] Fig. 9:Relative variation of critical rate of decrease of main current versus junction temperature. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Tj(°C) IGT IH & IL IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25°C] Fig. 7:Relative variation of gate trigger current, holding current and latching current versus junc- tion temperature (typical values). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 dV/dt (V/µs) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c Fig. 8:Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical val- ues). 25 50 75 100 125 Tj(°C) VD=VR=400V dV/dt [Tj] / dV/dt [Tj = 125°C] Fig. 10:Relative variation of static dV/dt immunity versus junction temperature. 100 1000 0.01 0.10 1.00 10.00 tp(ms) Tj initial=25°C dI/dt limitation: 50A/µs ITSM I²t ITSM(A), I t (A s) Fig. 6:Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I 2t. 1 10 100 1000 Number of cycles Non repetitive Tj initial=25°C Repetitive Tc=110°C t=20ms ITSM(A) Fig. 5:Surge peak on-state current versus number of cycles.

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com Ordering type Marking Package Weight Base qty Packing mode BTB04-600SL BTB04-600SL TO-220AB 2.3 g 50 Tube OTHER INFORMATION PACKAGE MECHANICAL DATA TO-220AB (Plastic) A C D Dia F G E M REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ.