BTA06

BTB06 SIRECTIFIER | Alldatasheet

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Discrete Triacs(Non-Isolated/Isolated) ABSOLUTE MAXIMUM RATINGS Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-22 0AB Tc = 100 °C 6 A ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz t = 16.7 ms 63 A F = 50 Hz t = 20 ms 60 I²tI ²t Value for fusing tp = 10 ms 21 A²s dI/dt Critical rate of rise of on-state current IG = 2 x I GT , tr < 100 ns F = 120 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate p ower diss ipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant BTA/BTB Unit CW BW IGT (1) VD = 12 V RL = 30 I - II - III MAX. 35 50 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III MIN. 0.2 V IH (2) IT = 100 mA MAX. 35 50 mA IL IG = 1.2 IGT I - III MAX. 50 70 mA II 60 80 dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C MIN. 400 1000 V/µs (dI/dt)c (2) Without snubber Tj = 125°C MIN. 5.3 A/ms Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01

2.54 BSC

4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040

0.100 BSC

0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB G G Symbol Ω 3.5

Discrete Triacs(Non-Isolated/Isolated) ■ STANDARD (4 Quadrants) STATIC CHARACTERISTICS Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Symbol Test Conditions Quadrant Value Unit IGT (1) VD = 12 V RL = 30 I - II - III IV MAX. 50 100 mA VGT ALL MAX. 1.3 V VGD VD = VDRM RL = 3.3 Tj = 125°C ALL MIN. 0.2 V IH (2) IT = 500 mA MAX. 50 mA IL IG = 1.2 IGT I - III - IV MAX. 50 mA II 100 dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C MIN. 400 V/µs (dV/dt)c (2) (dI/dt)c =2.7 A/ms Tj = 125°C MIN. 10 V/µs Symbol Test Conditions Value Unit VTM (2) ITM = 5.5 A tp = 380 µs Tj = 25°C MAX. 1.55 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 60 mΩ IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µ A Tj = 125°C 1 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 1.8 °C/W Rth(j-a) Junction to ambient °C/W60 PRODUCT SELECTOR Part Number Voltage (xxx) Sensitivity Type Package

200 V 1000 V

BTB/BTA06 X X 50 mA Standard TO-220AB OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode BTB/BTA06 BTB/BTA06 2.3 g 250 Bulk Ω Ω

Discrete Triacs(Non-Isolated/Isolated) F ig. 1: Maximum power dis s ipation vers us R MS on-s tate current (full cycle). F ig. 2: R MS on-state current vers us cas e temperature (full cycle). F ig. 3: R elative variation of thermal impedance versus pulse duration. F ig. 4: On-s tate characteris tics (maximum values ). F ig. 5: S urge peak on-state current vers us number of cycles . F ig. 6: Non-repetitive s urge peak on-s tate current for a s inus oidal puls e with width tp < 10ms, and corres ponding value of I²t. 0 1 2 3 4 5 60 P (W) IT (R MS )(A ) 0 25 50 75 100 1250 IT (R MS ) (A ) B TA B T B T c (°C ) 1E -3 1E -2 1E -1 1E +0 1E +1 1E +2 5E +21E -2 1E -1 1E +0 K =[Zth/R th] Zth(j-c) Zth(j-a) tp(s ) 100 IT M (A ) T j=T j maxT j max. V to = 0.85V R d = 60 mΩ V T M(V ) 1 10 100 10000 IT S M (A ) Non repetitive T j initial=25°C R epetitive T c=105°C One cycle t=20ms Number of cycles 0.01 0.10 1.00 10.0010 100 1000 tp (ms ) IT S M (A ),I²t (A ²s ) T j initial=25°C IT S M I²t dI/dt limitation: 50A /µs

Discrete Triacs(Non-Isolated/Isolated) F ig. 7: R elative variation of gate trigger current, holding current and latching current vers us junction temperature (typical values). F ig. 8-1: R elative variation of critical rate of decreas e of main current vers us (dV /dt)c (typical values ). S nubberles s & Logic Level Types F ig. 8-2: R elative variation of critical rate of decreas e of main current vers us (dV /dt)c (typical values ). S tandard Types F ig. 9: R elative variation of critical rate of decreas e of main current vers us junction temperature. -40 -20 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 IG T,IH,IL [T j] / IG T,IH,IL [T j=25°C ] IG T IH & IL T j(°C ) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c B W/C W S W T W (dV /dt)c (V /µs ) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c C B (dV /dt)c (V /µs ) 0 25 50 75 100 1250 (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] T j(°C )