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JJ JIEJIE MICROELECTRONICS CO.,Ltd BTA06/BTBO6 Series 6A TRIACs DESCRIPTION: TO-220AB(BTB06) High current density due to double mesa technology; SIPOS and Glass Passivation. fe) BTA06/BTB06 series triacs is suitable for 2 general purpose AC switching. They can be used as an ON/OFF Function in applications such as static relays, heating regulation, induction motor stating circuits...or for phase control ' 2 1 operation light dimmers, motorspeed controllers. 3 BTAO6/BTBO6- X X XTW, —X X XSW, -X X XCI - 3 X X XBW are 3 Quadrants triacs, They are specially recommended for use on inductive 6 DPAK loads. BTAQ6 are isolated internally, they provides a 2500V RMS isolation voltage from all three terminals to extemal heetsink. T1(1) MAIN FEATURES ) 3 G(3) TO-220AB insulated ABSOLUTE MAXIMUM RATINGS Symbo Storage junction temperature range Tstg -40 to +150 °c Operrating junction temperature range Tj -40 to +125 Repetitive Peak Off-state Voltage Tj=25°C VorRM 600and800 Vv Repetitive Peak Reverse Voltage J VRRM 600and800 Non repetitive Surge Peak Off-state Voltage Tj=25°C Vopsm 700and900 Vv Non repetitive Peak Reverse Voltage & VRSM 700and900 RMS on-state current DPAK / TO-220AB_Tc=110°C IT(RMs) A (full sine wave) TO-220AB Ins Tc=105°C Non repetitive surge peak on-state Itsm 60 A current (full cycle, Tj=25°C) 63 Critical rate of rise of on-state current di /dt 50 Al Peak gate current tp=20us, Tj=125°C Average gate power dissipation Tj=125°C lel: +86-513-83639777 -1/5- http; //WNW. JIEJIE-CN, COM
BTA06/BTBO6 Series JJ JieJie MicroelectronicsCO.,Ltd ELECTRICAL CHARACTERISTICS (Tj=25°C unless otherwise specified) @3 Quadrants Symbol Test Condition Quadrant BTA06/BTBO6 Unit vost eon | 0 | Pow [wx [| | Ved |Vb=VpbRM RL=3.3KQ MIN.. 0.2 Vv Tj=125°C i fictaicr MAX. | tem | max [10 | mA eee Pe fiw ee | fs fo | | dV/dt |Vo=67%Vorm gate open MIN. 20 40 400 V/us Tj=125°C (alidt)e |(av/at) c=0.1V/us Ti=125"C min. [35 | 65 | —| —] arms (avial) ovis T125¢ Pio [2° | | —| [T= Tess) @ 4 Quadrants Symbol Test Condition Quadrant BTA06/BTBO6 Unit Poe fe | lot I -Il-Ill | MAX. 25 50 mA IV 50 100 Vp=12V_ RL=30Q VGD |VD=VpRM RL=3.3KQ ALL MIN. 0.2 Vv Tj=125°C es dV/dt |VD=67%Vorm gate open MIN. 200 400 V/s Tj=125°C (dlidt)e |(aV/dt) c=0.1V/us T=125°C MIN. | - [| - | P= = TEL: 0513-83639777 -2/5- http: //WWW.JIEJIE-CN.COM
BTA06/BTBO6 Series SJ Jiesie Microelectronics CO.,Ltd STATIC CHARACTERISTICS Symbol Test Conditions Value Unit (MAX.) THERMAL RESISTANCES Rth(j-c) Junction to case (AC) [oraK/to-220008 =] 18 | T/W
ORDERING INFORMATION
A:TO-220AB INSULATED B:TO-220AB 600:VDRM/VRRM>600V Ir(RMs): 6A 800:VDRM/VRRM>800V TEL: 0513-83639777 -3/5- http: //WWW.4JIEJIE-CN.COM
BTAO6/BTBO6 Series JJ JieJie Microelectronics CO.,Ltd PACKAGE MECHANICAL DATA TO-220AB a SC nae See [8 [oar] [oe [aazs| [ose [ce [oae| [70 [oars] [oar ay) 3 ' [ez [ize] [132 [aces] [ons Tt oS) (a 2 [oor Tora] I Pe [2 [es [97 fossal oe] 6 [= [0 | [ros [oars [oar = ike Le [ez] [6 fozea] fos » Le eo] Pray] 7 ee [3 [205] [a5 [ores] foe] a <= eT eT 4 SG DPAK Ret = A [A-[zz) [2a foose| oor] a C2 [az [eos] [os fooon| fea | — [8 [ass[ [oes fooa —foczs| ce =) [E82 [sa Jor0e —foara| 7 OO. | [eJos[ oar foor7| —foore —— ee i 1 Ul. eS [Pe fea| Pes [ozs [ozs] cS Jc Ls [aao[ —[xeo fo.rra| Tore] in [a [p35[ [07 Josey for A2 sD 2 bi [rary [1s foosay Poa] 2K pe ep pet 4. beret pe pep pe] TEL: 0513-83639777 -4/5- http: //WWW.JIEJIE-CN.COM
BTA06/BTBO6 Series JJ JieJie Microelectronics CO.,Ltd FIG.1: Maximum power dissipation versus FIG.2: RMS on-state current versus case RMS on-state current(full cycle) temperature (full cycle) P(W) IT(RMS)(A) Se TT —77z-_] rr 4 EET +) a 5 Re a Fe SW a a a OV i a | SS = a | ° re ee ITM S(Ay ||| epee) Ff b 7 7 > © 5 ¢ ° ra Ey 78 cy vas FIG.3: On-state characteristics (maximum FIG.4: Surge peak on-state current versus values) number of cycles ITM(A) ITSM(A) ‘= SS SS of -_TIMM TTT TT CTT ee oe Set as=~ a seeeeeeee ® arcing Fie eC CEACE A a PEELE LL “= EEF th nse ttt +} = ——— of TTT TTT TTT) fee | ee ad A SS A ca asl CoA a [| yyy | Vimy 0 — PTT nope eee Se j LIFE TTT TTT EET TT ETT | ol TUM T TT TT TTT) FIG.5: Non-repetitive surge peak on-state FIG.6: Relative variations of gate trigger current for a sinusoidal pulse with width current, holding current and latching current tp < 10ms, and corresponding value of I’t. versus junction temperature(typical values) ITSM(A), I?t(A® s) IGTIH,IL(T/IGT.IH,IL(T}=25 C] hf i intateas “OTT TTT TT TT TT TT TT wT TTT Teng] Ere ENGR EERE i imitafion ret Pare eae BENS a! N eee ee Oo SRE ee 3 Pt | CO Ce rots Cr eT “COE ECRIPeLE CPE EEL Cr TCIM), Eee rere rr} TEL: 0513-83639777 -5/5- sas; WHW, JIEJIE-CN. COM