BTA04T STMICROELECTRONICS | Alldatasheet

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Technical content

BTB04 T/D/S/A® September 2001 - Ed: 1A SENSITIVE GATE TRIACS n Very low IGT = 10mA max n Low IH = 15mA max n BTA Family: Insulating voltage = 2500V(RMS) (UL recognized: E81734)

FEATURES

The BTA/BTB04 T/D/S/A triac family are high per- formance glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where gate high sensitivity is required. Application on 4Q such as phase control and static switching.

DESCRIPTION

Symbol Parameter Value Unit IT(RMS) RMS on-state current (360° conduction angle) BTA Tc = 90°C 4 A BTB Tc = 95°C ITSM Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 8.3ms 42 A tp = 10ms 40 I2tI 2t value tp = 10ms 8 A 2s dI/dt Critical rate of rise of on-state current Gate supply: IG = 50mA dI G /dt = 0.1A/µs Repetitive F = 50Hz

10 A/µs

Storage and operating junction temperature range -40 to +150 -40 to +110 Tl Maximum lead soldering temperature during 10s at 4.5mm from case 260 °C ABSOLUTE RATINGS (limiting values) Symbol Parameter BTA / BTB04- Unit

400 T/D/S/A 600 T/D/S/A 700 T/D/S/A

Repetitive peak off-state voltage Tj = 110°C400 600 700 V G

BTA04 T/D/S/A BTB04 T/D/S/A Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 °C/W Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W BTB 3.2 Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz) BTA 3.3 °C/W BTB 2.4 GATE CHARACTERISTICS (maximum values) PG(AV) =1 W P GM = 40W (tp = 20µs) IGM = 4A (tp = 20µs) VGM = 16V (tp = 20µs) THERMAL RESISTANCE Symbol Test conditions Quadrant BTA / BTB04 Unit TDSA IGT VD = 12V (DC) RL =3 3Ω Tj = 25°C I - II - III MAX. 5 5 10 10 mA IV MAX. 5 10 10 25 VGT VD = 12V (DC) RL =3 3Ω Tj = 25°C I - II - III - IV MAX. 1.5 V VGD VD =V DRM R L = 3.3kΩ Tj =110°C I - II - III - IV MIN. 0.2 V tgt V D =V DRM IG = 40mA dIG /dt = 0.5A/µs Tj = 25°C I - II - III - IV TYP. 2 µs IL IG = 1.2IGT Tj = 25°C I - III - IV TYP. 10 10 20 20 mA II 20 20 40 40 IH *I T = 100mA Gate open Tj = 25°C MAX. 15 15 25 25 mA VTM *I TM = 5.5A tp = 380µs Tj = 25°C MAX. 1.65 V IDRM IRRM VDRM rated VRRM rated Tj = 25°C MAX. 0.01 mA Tj = 110°C MAX. 0.75 dV/dt * Linear slope up to VD = 67% VDRM gate open Tj = 110°C TYP. 10 10 - - V/ µs MIN. - - 10 10 (dI/dt)c* (dI/dt)c = 1.8A/ms Tj = 110°C TYP. 1 1 5 5 V/µs * For either polarity of electrode A2 voltage with reference to electrode A1

ELECTRICAL CHARACTERISTICS

BTA04 T/D/S/A BTB04 T/D/S/A Package IT(RMS) VDRM /VRRM Sensitivity Specification A V TDSA BTA (Insulated) 4 400 X X

600 X X

700 X X

(Uninsulated)

400 X X

Insulation: A: insulated B: non insulated Current: 04A Voltage: 400: 400V 600: 600V 700: 700V Sensitivity

ORDERING INFORMATION

BTA04 T/D/S/A BTB04 T/D/S/A Fig. 3:Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig. 4:RMS on-state current versus case temper- ature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.1 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig. 5:Relative variation of thermal impedance versus pulse duration. Fig. 6:Relative variation of gate trigger current and holding current versus junction temperature. Fig. 1:Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 2:Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA).

BTA04 T/D/S/A BTB04 T/D/S/A Fig. 9:On-state characteristics (maximum values). Fig. 7:Non repetitive surge peak on-state current versus number of cycles. Fig. 8:Non repetitive surge peak on-state current for a sinusoidal pulse with width: t≤ 10ms, and cor- responding value of I2t.

BTA04 T/D/S/A BTB04 T/D/S/A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com Ordering type Marking Package Weight Base qty Delivery mode BTA/BTB04-xxxy BTA/BTB04-xxxy TO-220AB 2.3 g 250 Bulk n Epoxy meets UL94,V0 n Cooling method: C n Recommended torque value: 0.8 m.N. n Maximum torque value: 1 m.N. OTHER INFORMATION PACKAGE MECHANICAL DATA TO-220AB (Plastic) M B C A F L I e REF. DIMENSIONS Millimeters Inches A 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 2.60 0.102