BT258S-800R PHILIPS | Alldatasheet

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Philips Semiconductors Product specification Thyristors BT258S-800R logic level GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated, sensitive gate thyristor inSYMBOL PARAMETER MAX. UNIT a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and V DRM , VRRM Repetitive peak off-state voltages 800 V phase control applications. These IT(AV) devices are intended to be interfaced IT(RMS) Average on-state current 5 A directly to microcontrollers, logic ITSM RMS on-state current 8 A integrated circuits and other low Non-repetitive peak on-state current 75 A power gate trigger circuits. PINNING - SOT428 PIN CONFIGURATION SYMBOL PIN NUMBER 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM , VRRM Repetitive peak off-state - 800 V voltages IT(AV) Average on-state current half sine wave; Tmb ≤ 111 ˚C - 5 A IT(RMS) RMS on-state current all conduction angles - 8 A ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to on-state current surge t = 10 ms - 75 A t = 8.3 ms - 82 A I2tI 2t for fusing t = 10 ms - 28 A 2s dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/ µs on-state current after dIG /dt = 50 mA/µs triggering IGM Peak gate current - 2 A VRGM Peak reverse gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 1 ˚C temperature tab ak g 1 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less. October 2002 1 Rev 2.000

Philips Semiconductors Product specification Thyristors BT258S-800R logic level THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance - - 2.0 K/W junction to mounting base R th j-a Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A - 50 200 µA IL Latching current V D = 12 V; IGT = 0.1 A - 0.4 10 mA IH Holding current V D = 12 V; IGT = 0.1 A - 0.3 6 mA VT On-state voltage I T = 16 A - 1.3 1.6 V VGT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.4 1.5 V VD = VDRM(max) ; IT = 0.1 A; Tj = 110 ˚C 0.1 0.2 - V ID , IR Off-state leakage current VD = VDRM(max) ; VR = VRRM(max) ; Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD /dt Critical rate of rise of VDM = 67% VDRM(max) ; Tj = 125 ˚C; 50 100 - V/ µs off-state voltage exponential waveform; R GK = 100 Ω tgt Gate controlled turn-on ITM = 10 A; VD = VDRM(max) ; IG = 5 mA; - 2 - µs time dI G /dt = 0.2 A/µs tq Circuit commutated V D = 67% VDRM(max) ; Tj = 125 ˚C; - 100 - µs turn-off time I TM = 12 A; VR = 24 V; dITM /dt = 10 A/µs; dVD /dt = 2 V/µs; RGK = 1 kΩ October 2002 2 Rev 2.000

Philips Semiconductors Product specification Thyristors BT258S-800R logic level Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS) / IT(AV). Fig.2. Maximum permissible non-repetitive peak on-state current ITSM , versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb . Fig.4. Maximum permissible non-repetitive peak on-state current ITSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 111˚C. Fig.6. Normalised gate trigger voltage VGT (Tj)/ VGT (25˚C), versus junction temperature Tj. 0 2 4 6 a = 1.57 1.9 2.2 2.8 IT(AV) (A) Ptot (W) Tmb(max) (˚C) 125 123 121 119 117 115 113 111 109 30 4 conduction angle form degrees 120 180 (a) 2.8 2.2 1.9 1.57 factor 1 10 100 10000 Number of half cycles at 50Hz ITSM / A T ITSM time I T Tj initial = 25 C max 100 1000 10us 100us 1ms 10ms T / s ITSM / A T ITSM time I Tj initial = 25 C max T dI /dt limitT 0.01 0.1 1 100 surge duration / s IT(RMS) / A -50 0 50 100 1500 BT258 Tmb / C IT(RMS) / A 111 C -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 Tj / C VGT(Tj) VGT(25 C) October 2002 3 Rev 2.000

Philips Semiconductors Product specification Thyristors BT258S-800R logic level Fig.7. Normalised gate trigger current IGT (Tj)/ IGT (25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. Fig.9. Normalised holding current IH (Tj)/ IH (25˚C), versus junction temperature Tj. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.12. Typical, critical rate of rise of off-state voltage, dVD /dt versus junction temperature Tj. -50 0 50 100 1500 0.5 1.5 2.5 Tj / C IGT(Tj) IGT(25 C) 0 0.5 1 1.5 2 typ VT / V IT / A max Vo = 1 V Rs = 0.04 Ω Tj = 125 °C Tj = 25 °C -50 0 50 100 1500 0.5 1.5 2.5

3 BT150

IL(Tj) IL(25 C) 10us 0.1ms 1ms 10ms 0.1s 1s 10s0.01 0.1 tp / s Zth j-mb (K/W) tpP t D -50 0 50 100 1500 0.5 1.5 2.5 Tj / C IH(Tj) IH(25 C) 0 50 100 1501 100 1000 Tj / C dVD/dt (V/us) RGK = 100 ohms October 2002 4 Rev 2.000

Philips Semiconductors Product specification Thyristors BT258S-800R logic level MECHANICAL DATA Dimensions in mm Net Mass: 1.1 g Fig.13. SOT428 : centre pin connected to tab. MOUNTING INSTRUCTIONS Dimensions in mm Fig.14. SOT428 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". 6.22 max 2.38 max 0.93 max 6.73 max 0.3 10.4 max 0.5 0.8 max (x2) 2.285 (x2) 0.5 seating plane 1.1 0.5 min 5.4 4 min 4.6 tab 7.0 7.0 2.15 2.5 4.57 1.5 October 2002 5 Rev 2.000

Philips Semiconductors Product specification Thyristors BT258S-800R logic level DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS 2 STATUS 3 Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was October 2002 6 Rev 2.000