BT24F-600B FS | Alldatasheet
Document overview
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- PDF pages: 5
Technical content
Features
- Blocking Voltage to 600~800 V
- On-State Current Rating of 20A RMS at 90℃
- Uniform Gate Trigger Currents in Three Quadrants
- High Immunity to dV/dt-1500V/us minimum at 125℃
- Minimizes Snubber Networks for Protection
- Industry Standard TO-220F Package
- High Commutating dI/dt- 4.0A/ms minimum at 125℃
- Internally Isolated (2500VRMS)
- These are Pb-Free Devices
- High current density due to double mesa technology, SIPOS and Glass passivation . BT24F series triacs is suitable for general purpose AC switching. They can be used as an ON/OFF function is applications such as static relays, heating regulation, induction motor stating circuits or phase control operation light dimmers, motorspeed controllers.
- BT24F series are 3 Quadrants triacs, They are specially recommended for use on inductive loads. Parameter Symbol Value Unit Storage junction temperature range Tstg -40 to + 150 ℃ Operating junction temperature range Tj -40 to + 125 ℃ Repetitive Peak OFF-state Voltage Tj=25℃ VDRM 600 and 800 V Repetitive Peak Reverse Volt age Tj=25℃ VRRM 600 and 800 V Non repetitive surge peak o ff-state voltage Tp=10ms,Tj=25℃ VDSM 700 and 900 V Non repetitive peak reverse voltag e VRSM 700 and 900 V RMS on-state current(full sine wave) TC=90℃ IT(RMS) 24 A TC=70℃ Non repetitive surge peak on-state cu rrent (full cycle,TJ=25℃) f=60Hz,t=16.7ms ITSM 250 Af=50Hz,t=20ms 260 I2t Value for fusing Tp=10ms I2t 340 A 2s Critical rate of rise of on-state current IG=2*IGT,tr≤100ns,f=120Hz,Tj=125℃ dI/dt 50 A/us Peak gate current(tp=20us,Tj=125℃) IGM 4 A Peak gate power dissipation(tp=20us,Tj=125℃) PGM 10 W Average gate power dissipation(Tj=125℃) PG(AV) 1 W 2018. 04. 11 1/5Revision No : 0
- 04. 11 2/5 BT24F-600B Revision No : 0 Electrical Characteristics (Tj=25℃,unless other wise specified) Symbol Test Condition Quadrant Limit Unit CW(C) BW(B) IGT VD=12V,RL=33Ω Ⅰ-Ⅱ-Ⅲ MAX 35 50 mA VGT Ⅰ-Ⅱ-Ⅲ MAX 1.3 V VGD VD=VDRM RL=3.3KΩ Tj=125℃ Ⅰ -Ⅱ-Ⅲ MIN 0.2 V IL I G=1.2IGT Ⅰ-Ⅲ MAX 50 70 mA Ⅱ MAX 60 80 mA IH I T=100mA MAX 40 60 mA Dv/dt VD=67%VDRM gate open TJ=125℃ MIN 500 1000 V/us (Dv/dt)c (dl/dt)c=8.8A/ms Tj=125 ℃ MIN 8.5 14 V/us Static Characteristics Symbol Parameter Value(MAX) Unit VTM ITM=35A,tp=380us Tj=25 ℃ 1.55 V IDRM VD=VDRM VR=VRRM Tj=25℃ 5 uA IRRM Tj=125℃ 3 mA Thermal Resistances Symbol Parameter Value Unit Rth(J-C) J unction to case(AC) 1.7 ℃/W
+ Current + Voltage VTM IH Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current Voltage Current Characteristic of Triacs (Bidirectional Device) IDRM at VDRM on state off state IRRM at VRRM Quadrant 1 MainTerminal 2 + Quadrant 3 MainTerminal 2 − V TM IH VTM Maximum On State Voltage IH Holding Current MT1 (+) IGT GATE (+) MT2 REF MT1 (−) IGT GATE (+) MT2 REF MT1 (+) IGT GATE (−) MT2 REF MT1 (−) IGT GATE (−) MT2 REF MT2 NEGATIVE (Negative Half Cycle) MT2 POSITIVE (Positive Half Cycle) V I t n a r d a u QI I I t n a r d a u Q I t n a r d a u QI I t n a r d a u Q Quadrant Definitions for a Triac IGT − + IGT All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. 2018. 04. 11 3/5Revision No : 0