BT20F-600B FS | Alldatasheet

Document overview

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Technical content

Features

  • Blocking Voltage to 600~800 V
  • On-State Current Rating of 20A RMS at 90℃
  • Uniform Gate Trigger Currents in Three Quadrants
  • High Immunity to dV/dt-1500V/us minimum at 125℃
  • Minimizes Snubber Networks for Protection
  • Industry Standard TO-220F Package
  • High Commutating dI/dt- 4.0A/ms minimum at 125℃
  • Internally Isolated (2500VRMS)
  • These are Pb-Free Devices
  • High current density due to double mesa technology, SIPOS and Glass passivation . BT20F series triacs is suitable for general purpose AC switching. They can be used as an ON/OFF function is applications such as static relays, heating regulation, induction motor stating circuits or phase control operation light dimmers, motorspeed controllers.
  • BT20F series are 3 Quadrants triacs, They are specially recommended for use on inductive loads. Parameter Symbol eV alue tUnit Storage junction temperature range Tstg -40 to + 150 ℃ Operating junction temperature range Tj -40 to +125 ℃ Repetitive Peak OFF-state Voltage Tj=25℃ VDRM 600 and800 V Repetitive Peak Reverse Voltage Tj=25℃ VRRM 600 and800 V Non repetitive surge peak off-state voltage Tp=10ms,Tj=25℃ VDSM 700 and900 V Non repetitive peak reverse voltage VRSM 700 and900 V RMS on-state current(full sine wave) TC=90℃ IT(RMS) 20 A TC=70℃ Non repetitive surge peak on-state current(full cycle,TJ=25℃) f=60Hz,t=16.7ms ITSM 210 A f=50Hz,t=20ms 200 I2t Value for fusing Tp=10ms I2t 200 A 2s Critical rate of rise ofon-state current IG=2*IGT,tr≤100ns,f=120Hz,Tj=125℃ dI/dt 100 A/us Peak gate curren t(tp=20us,Tj=125℃) IGM 4 A Peak gatepower dissipation(tp=20us,Tj=125℃) PGM 10 W Average gatepower dissipation(Tj=125℃) PG(AV) 1 W 2018. 04. 11 1/5Revision No : 0
  1. 04. 11 2/5 BT20F-600B Revision No : 0 ect iElectrical isCharacteristics (Tj=25℃,unless otherwise specified) SymbolS ymbol TeststTest ConditionCondition dQuadranta nQuadrant iiLimitLimit U iUnitUnit CCCW(C)CW(C) W )W )BW(B)BW(B) I GT VD=12V,RL=33Ω Ⅰ-Ⅱ-Ⅲ MAX 35 50 mA VGT Ⅰ-Ⅱ-Ⅲ MAX 1.5 V VGD VD=VDRM RL=3.3KΩ Tj=125℃ Ⅰ -Ⅱ-Ⅲ MIN 0.2 V IL I G=1.2IGT Ⅰ-Ⅲ MAX 50 70 mA Ⅱ MAX 60 80 mA IH I T=100mA MAX 40 60 mA Dv/dt VD=67%VDRM gateopen TJ=125℃ MIN 250 500 V/us (Dv/dt)c (dl/dt)c=8.8A/ms Tj=125℃ MIN 7 12.5 V/us icicStaticStatic ararCharact eristicsCharacteristics Sy lS ymbol ParParameter u AValue(MAX) nUnit VTM ITM=28A,tp=380us Tj=25 ℃ 1.55 V IDRM VD=VDRM VR=VRRM Tj=25℃ 5 uA IRRM Tj=125℃ 2.5 mA rmTherm al is nRResistances b lmS ymbol Parameter Value tUnit Rth(J-C) J unction to case(AC) 2.1 ℃/W

+ Current + Voltage VTM IH Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current Voltage Current Characteristic of Triacs (Bidirectional Device) IDRM at VDRM on state off state IRRM at VRRM Quadrant 1 MainTerminal 2 + Quadrant 3 MainTerminal 2 − V TM IH VTM Maximum On State Voltage IH Holding Current MT1 (+) IGT GATE (+) MT2 REF MT1 (−) IGT GATE (+) MT2 REF MT1 (+) IGT GATE (−) MT2 REF MT1 (−) IGT GATE (−) MT2 REF MT2 NEGATIVE (Negative Half Cycle) MT2 POSITIVE (Positive Half Cycle) V I t n a r d a u QI I I t n a r d a u Q I t n a r d a u QI I t n a r d a u Q Quadrant Definitions for a Triac IGT − + IGT All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. 2018. 04. 11 3/5Revision No : 0

  1. 04. 11 4/5 BT20F-600B Revision No : 0 Fig. 3:Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact (BTB). Fig. 4:RMS on-state current versus case temper- ature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.1 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig. 5: Relative variation of thermal impedance versus pulse duration. Fig. 6: Relative variation of gate trigger current and holding current versus junction temperature. Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F=50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 2:Correlation between maximum RMSpower dissipation and maximum allowable temperatures (Tamb andTcase) for different thermal resistances heatsink +contact (BTA).
  1. 04. 11 5/5 BT20F-600B Revision No : 0 Fig. 9:On-state characteristics (maximum values). Fig. 7:Non repetitive surge peak on-state current versus number of cycles. Fig. 8:Non repetitive surge peak on-state current for a sinusoidal pulse with width: t≤10ms, and cor- responding value of I2t.