BT169GL-T92-K

BT169B UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD BT169 SCR www.unisonic.com.tw 1 of 6 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R301-015,C SCRS „ DESCRIPTION Passivated, sensitive gate thyris tors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices ar e intended to be interfaced directly to microcontrollers, l ogic integrated circuits and other low power gate trigger circuits. „ SYMBOL Lead-free: BT169xL Halogen-free: BT169xG „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Halogen Free Package 1 2 3 Packing BT169B-T92-B BT169BL-T92-B BT169BG-T92-B TO-92 K G A Tape Box BT169B-T92-K BT169BL-T92-K BT169BG-T92-K TO-92 K G A Bulk BT169D-T92-B BT169DL-T92-B BT169DG-T92-B TO-92 K G A Tape Box BT169D-T92-K BT169DL-T92-K BT169DG-T92-K TO-92 K G A Bulk BT169E-T92-B BT169EL-T92-B BT169EG-T92-B TO-92 K G A Tape Box BT169E-T92-K BT169EL-T92-K BT169EG-T92-K TO-92 K G A Bulk BT169G-T92-B BT169GL-T92-B BT169GP-T92-B TO-92 K G A Tape Box BT169G -T92-K BT169GL-T92-K BT169GP-T92-K TO-92 K G A Bulk BT169H-T92-B BT169HL-T92-B BT169HG-T92-B TO-92 K G A Tape Box BT169H -T92-K BT169HL-T92-K BT169HG-T92-K TO-92 K G A Bulk Note: Pin Assignment: C:CATHODE G:GATE A:ANODE

UNISONIC TECHNOLOGIES CO., LTD 2 o f 6 www.unisonic.com.tw QW-R301-015,C „ QUICK REFERENCE DATA BT169B BT169D BT169E BT169G BT169H UNIT PARAMETER SYMBOL MAX MAX MAX MAX MAX MAX Repetitive Peak Off-State Voltages V DRM, VRRM 200 400 500 600 800 V Non-Repetitive Peak On-State Current I TSM 8 8 8 8 8 A „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT BT169B 200 BT169D 400 BT169E 500 BT169G 600 Repetitive Peak Off-State Voltages(Note 2) BT169H VDRM,VRRM 800 V Peak Gate Voltage V GM 5 V Peak Reverse Gate Voltage V RGM 5 V Peak Gate Current I GM 1 A Average On-State Current (Half Sine Wave, TLEAD 83≦ °C) IT(AV) 0.5 A RMS On-State Current (All Conduction Angles) I T(RMS) 0.8 A t=10ms 8 A Non-Repetitive Peak On-State Current (Half Sine Wave, TJ=25°C Prior to Surge) t=8.3ms ITSM 9 A I2t For Fusing (t=10ms) I 2t 0.32 A 2S Repetitive Rate of Rise of On-State Current After Triggering (ITM=2A,IG=10mA, dIG/dt=100mA/μs) dIT/dt 50 A/ μs Peak Gate Power P GM 2 W Average Gate Power (Over any 20 ms period) P G(AV) 0.1 W Junction Temperature T J +125 °C Storage Temperature T STG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the

thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Thermal Resistance Junction to Ambient (typ.) θJA 150 °C /W Note: pcb mounted, lead length=4mm „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TSET CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS Gate Trigger Current I GT V D=12V, IT=10 mA, gate open circuit 25 55 μA Latching Current I L V D=12V, IGT=0.5mA, RGK=1kΩ 2 6 mA Holding Current I H V D=12V,IGT=0.5mA, RGK=1kΩ 2 5 mA On-State Voltage V T I T=1A 1.2 1.35 V Gate Trigger Voltage V GT VD=12V, IT=10mA, gate open circuit VD=VDRM(MAX), IT=10mA, TJ=125°C, gate open circuit 0.2 0.5 0.3 0.8 V Off-State Leakage Current I D,IR VD=VDRM(MAX), VR=VRRM(MA\\X), TJ=125°C, RGK=1kΩ 0.05 0.1 mA

UNISONIC TECHNOLOGIES CO., LTD 3 o f 6 www.unisonic.com.tw QW-R301-015,C „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TSET CONDITIONS MIN TYP MAX UNIT DYNAMIC CHARACTERISTICS Ciritical Rate of Rise of Off-State Voltage dVD/dt VDM=67% VDRM(MAX), TJ=125°C, exponential waveform, RGK=1kΩ 500 800 V/ μs Gate Controlled Turn-On Time t gt ITM=2A,VD=VDRM(MAX), IG=10mA, dIG/dt=0.1A/μs 2 μs Circuit Commutated Turn-Off Time tq VD=67% VDRM(MAX), TJ=125°C, ITM=1.6A,VR=35V, dITM/dt=30A/μs, VD/dt=2V/μs, RGK=1kΩ 100 μs

UNISONIC TECHNOLOGIES CO., LTD 4 o f 6 www.unisonic.com.tw QW-R301-015,C „ TYPICAL CHARACTERISTICS Tc(MAX) (C) Maximum On-State Dissipation, PD (W) Maximnum Permissible Non-Repetitive Peak On-State Current, ITSM (A) Maximum Permissible Non-Repetitive Peak On-State Current, ITSM (A) Maximum Permissible Repetitive RMS On-State Current, IT(RMS) (A) Maximum Permissible RMS Current, IT(RMS) VGT(TJ) VGT(25°C) Normalised Gate Trigger Voltage

UNISONIC TECHNOLOGIES CO., LTD 5 o f 6 www.unisonic.com.tw QW-R301-015,C „ TYPICAL CHARACTERISTICS(Cont.) 50 100 150 0.5 1.0 1.5 2.5 3.0 Junction Temperature, TJ (°C) Normalised Gate Trigger Current vs. Junction Temperature IGT(TJ) VGT(25°C) -50 0 2.0 1.0 1.5 2.0 VT (V) Typical And Maximum On-State Characteristic IT (A) 00 . 5 TJ=125°C --- TJ= 25°C VOUT=1.067V Rs=0.187 typ max 2.5 Normalised Gate Trigger Current IL(TJ) IL(25°C) Transient Thermal Impedance, θJ-LEAD (°C/W) Normalised Latching Current IH(TJ) IH(25°C) Typical, Critical Rate Of Rise Of Off-State Voltage, dVD/dt(V/us) Normalised Holding Current

UNISONIC TECHNOLOGIES CO., LTD 6 o f 6 www.unisonic.com.tw QW-R301-015,C UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.