BT169 PHILIPS | Alldatasheet
Document overview
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Technical content
- Product profile
1.1 General description
Passivated, sensitive gate thyristors in a SOT54 plastic package.
1.2 Features
■ Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
1.3 Applications
■ General purpose switching and phase control applications.
1.4 Quick reference data
- Pinning information BT169 series Thyristors logic level Rev. 04 — 23 August 2004 Product data sheet ■ VDRM , VRRM ≤ 200 V (BT169B) ■ IT(RMS) ≤ 0.8 A ■ VDRM , VRRM ≤ 400 V (BT169D) ■ IT(AV)≤ 0.5 A ■ VDRM , VRRM ≤ 600 V (BT169G) ■ ITSM ≤ 8 A. Table 1: Discrete pinning Pin Description Simplified outline Symbol 1 anode (a) SOT54 (TO-92) 2 gate (g) 3 cathode (k) 123 sym037
9397 750 13512 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 23 August 2004 2 of 12 Philips Semiconductors BT169 series Thyristors logic level 3. Ordering information 4. Limiting values [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. Table 2: Ordering information Type number Package Name Description Version BT169B - plastic single-ended leaded (through hole) package; 3 leads SOT54 BT169D BT169G Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM , VRRM repetitive peak off-state voltages BT169B [1] - 200 V BT169D [1] - 400 V BT169G [1] - 600 V IT(AV) average on-state current half sine wave; Tlead≤ 83 °C; see Figure1 - 0.5 A IT(RMS) RMS on-state current all conduction angles; see Figure4 and5 - 0.8 A ITSM non-repetitive peak on-state current half sine wave; Tj=2 5°C prior to surge; see Figure2 and 3 t = 10 ms - 8 A t = 8.3 ms - 9 A I 2tI 2t for fusing t = 10 ms - 0.32 A 2s dIT/dt repetitive rate of rise of on-state current after triggering ITM = 2 A; IG = 10 mA; dIG /dt = 100 mA/µs -5 0 A / µs IGM peak gate current - 1 A VGM peak gate voltage - 5 V VRGM peak reverse gate voltage - 5 V PGM peak gate power - 2 W PG(AV) average gate power over any 20 ms period - 0.1 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C
9397 750 13512 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 23 August 2004 3 of 12 Philips Semiconductors BT169 series Thyristors logic level a = form factor = IT(RMS) /IT(AV). Fig 1. Total power dissipation as a function of average on-state current; maximum values. f = 50 Hz. Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values. 001aab446 0.4 0.2 0.6 0.8 Ptot (W) 101 113 125 IT(AV) (A) a = 1.57 2.2 1.9 2.8 conduction angle (degrees) form factor a 120 180 2.8 2.2 1.9 1.57 α Tc(max) (°C) 001aab499 ITSM (A) n 1 10310210 tp Tj initial = 25 °C max IT ITSM t
9397 750 13512 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 23 August 2004 4 of 12 Philips Semiconductors BT169 series Thyristors logic level tp ≤ 10 ms. Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values. f = 50 Hz; Tlead≤ 83°C. (1) T lead = 83°C. Fig 4. RMS on-state current as a function of surge duration for sinusoidal currents. Fig 5. RMS on-state current as a function of lead temperature; maximum values. 001aab497 tp (s) 10−5 10−210−310−4 102 103 ITSM (A) tp Tj initial = 25 °C max IT ITSM t 001aab449 0.5 1.5 IT(RMS) (A) surge duration (s) 10−2 10−1 101 Tlead (°C) −50 150 10005 0 001aab450 0.4 0.6 0.2 0.8 IT(RMS) (A) (1)
9397 750 13512 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 23 August 2004 5 of 12 Philips Semiconductors BT169 series Thyristors logic level 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-lead) thermal resistance from junction to lead --6 0 K / W R th(j-a) thermal resistance from junction to ambient printed-circuit board mounted; lead length = 4 mm - 150 - K/W Fig 6. Transient thermal impedance as a function of pulse width. 001aab451 102 10−1 Zth(j-lead) (K/W) 10−2 tp (s) 10−5 11 010−110−210−4 10−3 tp tp T P t Tδ =
9397 750 13512 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 23 August 2004 6 of 12 Philips Semiconductors BT169 series Thyristors logic level 6. Characteristics Table 5: Characteristics Tj = 25°C unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Static characteristics I GT gate trigger current VD = 12 V; IT = 10 mA; gate open circuit; seeFigure8 - 50 200 µA IL latching current V D = 12 V; IGT = 0.5 mA; R GK =1k Ω ; seeFigure10 - 26m A IH holding current V D = 12 V; IGT = 0.5 mA; R GK =1k Ω ; seeFigure11 - 25m A VT on-state voltage I T = 1.2 A - 1.25 1.7 V VGT gate trigger voltage IT = 10 mA; gate open circuit; see Figure7 VD = 12 V - 0.5 0.8 V VD = VDRM(max) ; Tj = 125°C 0.2 0.3 - V ID , IR off-state leakage current VD = VDRM(max) ; VR = VRRM(max) ; Tj= 125°C; RGK = 1 kΩ - 0.05 0.1 mA Dynamic characteristics dVD /dt critical rate of rise of off-state voltage VDM = 67 % VDRM(max) ; Tj = 125°C; exponential waveform; see Figure12 R GK = 1 kΩ 500 800 - V/ µs gate open circuit - 25 - V/ µs tgt gate controlled turn-on time ITM = 2 A; VD = VDRM(max) ; IG = 10 mA; dIG /dt = 0.1 A/µs -2 - µs tq circuit commuted turn-off time VD = 67 % VDRM(max) ; Tj = 125°C; ITM = 1.6 A; VR = 35 V; dITM / d t=3 0A /µs; dVD /dt = 2 V/µs; R GK = 1 kΩ - 100 - µs
9397 750 13512 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 23 August 2004 7 of 12 Philips Semiconductors BT169 series Thyristors logic level Fig 7. Normalized gate trigger voltage as a function of junction temperature. Fig 8. Normalized gate trigger current as a function junction temperature. VO = 1.067 V. R S = 0.187Ω . (1) Tj = 125°C; typical values. (2) Tj = 125°C; maximum values. (3) Tj = 25°C; maximum values. R GK = 1 kΩ . Fig 9. On-state current characteristics. Fig 10. Normalized latching current as a function of junction temperature. Tj (°C) −50 150 10005 0 001aab501 0.8 1.2 1.6 0.4 VGT(Tj) VGT(25 °C) Tj (°C) −50 150 10005 0 001aab502 IGT(Tj) IGT(25 °C) 001aab454 VT (V) 0.4 2.8 21.2 IT (A) (1) (2) (3) Tj (°C) −50 150 10005 0 001aab503 IL(Tj) IL(25 °C)
9397 750 13512 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 23 August 2004 8 of 12 Philips Semiconductors BT169 series Thyristors logic level 7. Package information Epoxy meets requirements of UL94 V-0 at1⁄8 inch. R GK = 1 kΩ . (1) R GK = 1 kΩ . (2) Gate open circuit. Fig 11. Normalized holding current as a function of junction temperature. Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values. Tj (°C) −50 150 10005 0 001aab504 IH(Tj) IH(25 °C) 001aab507 Tj (°C) 0 150 10050 103 102 104 dVD /dt (V/µs) (1) (2)
9397 750 13512 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 23 August 2004 9 of 12 Philips Semiconductors BT169 series Thyristors logic level 8. Package outline Fig 13. Package outline. UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 5.2 5.0 b 0.48 0.40 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 L 14.5 12.7 e 2.54 1.27 L1(1) max. 2.5 0.66 0.55 DIMENSIONS (mm are the original dimensions) Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. SOT54 TO-92 SC-43A 97-02-28 04-06-28 A L 0 2.5 5 mm scale b c D b1 L1 d E Plastic single-ended leaded (through hole) package; 3 leads SOT54 e
9397 750 13512 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 23 August 2004 10 of 12 Philips Semiconductors BT169 series Thyristors logic level 9. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Order number Supersedes BT169_SERIES_4 20040823 Product data sheet - 9397 750 13512 BT169_SERIES_3 Modifications:
- The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors.
- Section 1.4 “Quick reference data”: BT169E obsolete, removed from list.
- Table 2 “Ordering information”: BT169E obsolete, removed from table.
- Table 3 “Limiting values”: BT169E obsolete, removed from table. BT169_SERIES_3 20010902 Product specification - not applicable BT169_SERIES_2 BT169_SERIES_2 20010901 Product specification - not applicable BT169_SERIES_1 BT169_SERIES_1 19970901 Product specification - not applicable -
Philips Semiconductors BT169 series Thyristors logic level 9397 750 13512 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 23 August 2004 11 of 12 10. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 August 2004 Document order number: 9397 750 13512 Published in The Netherlands Philips Semiconductors BT169 series Thyristors logic level 14. Contents