BT169DW KEXIN | Alldatasheet
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Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit repetitive peak off-state voltages V DRM RRM 400 V average on-state current half sine wave;T lead I T(AV) 0.63 A RMS on-state current all conduction angles I T(RMS) non-repetitive peak on-state current t = 10 ms 8 A (all conduction angles; T j =2 5 )t = 8 . 3 m s 9A I t for fusing t = 10 ms I 0.32 A s repetitive rate of rise of on-state current after triggering * d IT t 50 A/ s peak gate current I GM peak gate voltage V GM peak reverse gate voltage V RGM peak gate power P GM average gate power (over any 20 ms period) P G(AV) 0.1 W storage temperature T stg - 4 0t o1 5 0 junction temperature T j 125 thermal resistance from junction to ambient R th(j-a)
156 K/W
=2A ;I G =1 0m A ; d I G t = 100 mA/ s I TSM 1 cathode 2 anode 3 gate 4 anode
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit gate trigger current I GT VD =1 2V ;IT = 10 mA 50 200 A latching current I L VD =1 2V ;IGT = 0.5 mA;RGK =1K 2 6 mA holding current I H VD =1 2V ;IGT = 0.5 mA;RGK =1k 25 m A on-state voltage V T IT = 2 A 1.35 1.5 V IT =1 0m A ; VD =1 2V 0 . 5 0 . 8 V IT =1 0m A ; VD =V DRM(max); Tj = 125 0.2 0.3 V off-state leakage current I D,I R VD =V DRM(max);V R =V RRM(max);Tj = 125 ;R GK = 1k 0.05 0.1 mA VDM =6 7%V DRM(max);T j = 125 ;exponential waveform;RGK =1k 500 800 V/ s VDM =6 7%V DRM(max);T j = 125 ;exponential waveform;gate open circuit 25 V/ s gate controlled turn-on time t gt ITM =2A ;V D =V DRM(max);IG =1 0m A ;dIG/dt =0 . 1 A/ s 2 s circuit commuted turn-off time t q VD =6 7%V DRM(max);T j = 125 ;ITM =1 . 6A ;VR =
35 V;dITM/dt =3 0A / s; dVD/dt =2V / s;RGK =1k 100 s
critical rate of rise of off-state voltage dV D/dt VGTgate trigger voltage BT169DW