BT169D TGS | Alldatasheet
Document overview
- Manufacturer or author: Administrator
- PDF pages: 1
Technical content
Parameter Symbol Typ UnitBT169D BT169G Repetitive peak off-state voltages VDRM VRRM 400 600 V Average on-state current IT(AV) 0.5 A RMS on-state current IT(RMS) 0.8 A Non-repetitive peak on-state current ITSM 8.0 A Max. Operating Junction Temperature Tj 110 oC Storage Temperature Tstg -45~150 oC BT169 series GENERAL DESCRIPTION Parameter Symbol Test Conditions Min Typ Max Unit BT169D BT169G Repetitive peak off-state voltage s VDRM VRRM — 400 600 — V Average on-state current IT(AV) half sine wave; T mb< 103 oC — 0.5 — A RMS on-state current IT(RMS) all conduction angles — 0.8 — A On-state voltage VT IT=1.0 A — 1.20 1.35 V Holding current IH VD =12 V; IGT = 0.5 mA — 0.5 5 mA Latching current IL VD =12 V; IGT = 0.5 mA — 0.6 6 mA Gate trigger current IGT VD =12 V; IT = 10 mA — 15 200 uA Gate trigger voltage VGT VD =12 V; IT = 10 mA — 0.5 0.8 V Thyristors logic level Passivated, sensitive gate thyristors ina plastic envelope, intended foruse in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Product specification TO-92 ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
( Ta = 25 C) O ( Ta = 25 C) O TIGER ELECTRONIC CO.,LTD