BT169

BT169 KEXIN | Alldatasheet

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www.kexin.com.cn 1 Thyristor ■ Features

• Repetitive peak off-state voltages :400V
• Average on-state current :0.5A
• RMS on-state current :0.8A
• Non-repetitive peak on-state current :8A 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ 3:CATHODE 1:GATE 2:ANODE SCR Thyristor BT169 (KT169) Symbol Rating Unit Peak Repetitive Forward and Reverse Blocking Voltages BT169-400 VDRM VRRM 400 V IT(AV) 0.5 IT(RMS) 0.8 I2t 0.32 A2s dIT/dt 50 A/us IGM 1 A VGM 5 VGRM 5 PGM 2 PGF(AV) 0.1 RthJA 150 RthJC 60 TJ 125 Tstg -40 to 150 K/W ITSM V W A Average on-state Current Forward Current RMS Non-Repetitive Peak on-state Current (t=10ms) Non-Repetitive Peak on-state Current (t=8.3ms) Repetitive Rate of rise of on-state Current after Triggering Circuit Fusing Considerations (t = 10ms) Storage Temperature Range Parameter Average Gate Power ─ Forward Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Junction Temperature Peak Gate Current Peak Gate Voltage Peak Gate Voltage ─ Reverse Peak Gate Power ─ Forward

www.kexin.com.cn2 Thyristor ■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.) SCR Thyristor BT169 (KT169) Parameter Symbol Test Conditions Min Typ. Max Unit Peak Repetitive Forward and Reverse Blocking Voltages VDRM VRRM IDRM=IRRM50uA 400 V Off-state Leakage Current ID,IR VDRM=VRRM(max);Tj=125℃; RGK=1kΩ 0.1 mA On-state Voltage VTM IT=1A 1.5 VD=12V, IT=10mA 0.8 VD= VDRM(max), IT=10mA; Tj=125℃ 0.2 Gate Trigger Current (Continuous dc) IGT VD=12V, IT=10mA 200 uA Latching Current IL VD=12V, IGT=0.5mA; RGK=1kΩ 6 Holding Current IH VD=12V, IGT=0.5mA; RGK=1kΩ 5 Critical Rate of rise of off-state Voltage dVD/dt VDM=67% VDRM(max); Tj=125 ℃ exponential waveform; RGK=1kΩ 25 V/us Gate Controlled turn-on time tgt ITM=2A; VD=VDRM(max),G=10mA; dIG/dt=0.1A/us 2 Circuit Commutated turn-off time tq VD=67% VDRM(max); Tj=125℃, TM=1.6A; VR=35V; dITM/dt=30A/us,dVD/dt=2V/us; RGK=1kΩ 100 us mA Gate Trigger Voltage VGT V ■ Classification of IGT (uA) Type BT169-400 BT169-400A BT169-400B Range 0-200 10-30 30-60 Marking BT/C39 BT/C35 BT/C36

www.kexin.com.cn 3 Thyristor ■ Typical Characterisitics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 119 125 113 107 101 conduction angle degrees form factor a 120 180 2.8 2.2 1.9 1.57 2.8 2.2 1.9 a=1.57 Tc(max) / C IF(AV) / A FIG.1 Maximum on-state dissipation, Ptot , versus average on-state current, I T(AV) , where a=form factor=I T(RMS) / IT(AV) Ptot / W 10µs 100 1000 T / s FIG.2 Maximum permissible non-repetitive peak on-state current ITSM ,versus pulse width tp,for sinusoidal currents, t p<=10ms. ITSM / A 100µs 1ms 10ms ITSMIT time Tj initial=25 C max T 50 100 150 0.2 0.4 0.6 0.8 1.0 Tlead / C FIG.3 Maximum permissible rms current I T(RMS) , versus lead temperature, Tlead IT(RMS) / A -50 0 83 C Number of half cycles at 50Hz FIG.4 Maximnum permissible non-repetitive peak on-state current ITSM , versus number of cycles, for sinusoidal currents, f = 50Hz. ITSM / A 10 100 1000 ITSMIT time Tj initial=25• •C max T 0.01 0.5 1.0 surge duration / s FIG.5 Maximum permissible repetitive rms on-state current I T(RMS) , versus surge duration, for sinusoidal currents, f= 50Hz; Tlead<=83 C IT(RMS) / A 0.1 1.0 10 1.5 2.0 0.4 50 100 150 0.6 0.8 1.0 1.4 1.6 Tj / C FIG.6 Normalised gate trigger voltage V GT(Tj) /V GT( 25 C), versus junction temperature Tj VGT(Tj) VGT(25 C) -50 0 1.2 b b b b b b SCR Thyristor BT169 (KT169)

www.kexin.com.cn4 Thyristor ■ Typical Characterisitics 50 150 1000 Tj / C FIG.12 Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. dVD/dt(V/us) 0 0 100 50 100 150 0.5 1.0 1.5 2.5 3.0 Tj / C FIG.7 Normalised gate trigger current IGT(Tj)/IGT(25 C), versus junction temperature Tj IGT(Tj) VGT(25 C) -50 0 2.0 50 100 150 Tj / C FIG.8 Normalised latching current I L(Tj) /IL(25 C),versus junction temperature Tj, RGK= 1KΩ IL(Tj) IL(25 C) -50 0 50 100 150 Tj / C FIG.9 Normalised holding current I H (Tj)/IH(25 C),versus junction temperature Tj, R GK=1KΩ IH(Tj) IH(25 C) -50 0 0.5 1.0 1.5 2.5 3.0 2.0 0.5 1.0 1.5 2.5 3.0 2.0 1.0 1.5 2.0 VT / V FIG.10 Typical and maximum on-state characteristic. IT / A 0 0.5 Tj=125 bC - - - Tj= 25 C Vo=1.067V Rs=0.187 Ω typ max 10us 0.01 0.1 tp / s FIG.11 Transient thermal impedance Zth j-lead, versus pulse width tp. Zth j-lead (K/W) 1ms 0.1s 10s 100 0.1ms 10ms 1s tpPD t RGK=1KΩ b b b b b b b SCR Thyristor BT169 (KT169)