BT169-400

BT169-400 KEXIN | Alldatasheet

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www.kexin.com.cn 1 Thyristor Silicon Controlled Rectifiers ■ Features

• Blocking voltage to 400 V
• Average on-state current to 0.5 A
• General purpose switching ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Repetitive peak off-state voltages VDRM,VRRM 400 V Average on-state current IT(AV) 0.5 A RMS on-state current IT(RMS) 0.8 A Non-repetitive peak on-state current ITSM 8 A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Min Typ Max Unit Repetitive peak off-state voltages VDRM 400 V Average on-state current IT(AV) RMS on-state current IT(RMS) 0.8 A full sine wave; t = 10 ms 8 A Tj = 25℃ prior to surge t = 8.3 ms 9 A I2t for fusing I2t 0.32 A2S Repetitive rate of rise of on-state current after triggering Peak gate current IGM 1 A Peak gate voltage VGM 5 V Peak gate power PGM 2 W Average gate power PG(AV) 0.1 W Thermal resistance junction to ambient RθJA 150 K/W Storage temperature Tstg -40 150 ℃ Operating junction temperature Tj 125 ℃ t = 10 ms dIT/dt PCB mounted,lead length=4mm A/μs Test conditions ITSMNon-repetitive peak on-state current All conduction angles Half sine wave;Tlead≤ 83 ℃ ITM = 2 A; IG = 10m A; dIG/dt = 100m A/μs over any 20 ms period ak g SMD Type BT169-400 SOT-89 Unit:mm 4.50±0.1 1.80±0.1 2 . 5 0 ± 0 . 1 4 . 0 0 ± 0 . 1 0.48±0.1 0.53±0.1 0 . 8 0 ± 0 . 1 1.50 ±0.1 0.44±0.1 3.00±0.1 0 . 4 0 ± 0 . 1 2 . 6 0 ± 0 . 1 1 2 3 ode e 2.Anode Cath3. Gat 0.5 A

www.kexin.com.cn 2 Thyristor ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Min Typ Max Unit Gate trigger current IGT 50 200 μA Latching current IL 2 6 Holding current IH 2 5 On-state voltage VT 1.2 1.35 V 0.5 0.8 V 0.2 0.3 V Test conditions dV /dtCritical rate of rise of off-state voltage mA Gate controlled turn-on time tgt tqCircuit commutated turn-off time 0.10.05 100 μS VGTGate trigger voltage ID,IROff-state leakage current μS

25 V/μS

IT = 1 A VD = 12 V; IT = 10mA,gate open circuit VD = VDRM(max); IT = 10mA; Tj = 125 ℃ Tj = 125 ℃ RGK=1KΩ VD = VDRM(max);VR=VRRM(max) RGK=1KΩ Tj = 125℃; exponential VDM =67% VDRM(max); IG=10mA ITM=2A;VD=VDRM(max); dIG/dt = 0.1 A/μs dITM/dt = 30 A/μs;VD/dt = 2V/μs Tj=125℃;VR=35V;RGK=1kΩ ITM = 1.6 A; VD = 67%VDRM(max); mA VD = 12 V; IT = 10m A,gate open circuit VD = 12 V; IGT = 0.5mA RGK=1KΩ VD = 12 V; IGT = 0.5mA RGK=1KΩ SMD Type D BT169-400 ■ Marking Marking BT169-400

www.kexin.com.cn 3 BT169-400 Fig.1. Maximum on-state dissipation, P tot , versus average on-state current, I T(AV) , where a = form factor = I T(RMS) T(AV) Fig.2. Maximum permissible non-repetitive peak on-state current I TSM , versus pulse width t p , for sinusoidal currents, t p 10ms. Fig.3. Maximum permissible rms current I T(RMS) versus solder point temperature T sp Fig.4. Maximum permissible non-repetitive peak on-state current I TSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.5. Maximum permissible repetitive rms on-state current I T(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; T sp 112˚C. Fig.6. Normalised gate trigger voltage V GT j )/ V GT (25˚C), versus junction temperature T j 0.2 0.4 0.6 0.8 a = 1.57 1.9 2.2 2.8 BT169W IF(AV) / A Ptot / W 125 122 119 116 113 110Tsp(max) / C conduction angle form factor degrees 120 180 2.8 2.2 1.9 1.57 a 1 10 100 10000 BT169 Number of half cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T 100 1000 BT169 10us 100us 1ms 10ms T / s ITSM / A T ITSM time I Tj initial = 25 C max T 0.01 0.1 1 100 0.5 1.5 BT134W surge duration / s IT(RMS) / A -50 0 50 100 1500 0.2 0.4 0.6 0.8 1.2 BT134W Tsp / C IT(RMS) / A 112 C -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 BT151 Tj / C VGT(Tj) VGT(25 C) I ■ Typical Characteristics

www.kexin.com.cn 4 BT169-400 Fig.7. Normalised gate trigger current I GT j )/ I GT (25˚C), versus junction temperature T j Fig.8. Normalised latching current I L j )/ I L (25˚C), versus junction temperature T j , R GK = 1 k Ω Fig.9. Normalised holding current I H j )/ I H (25˚C), versus junction temperature T j R GK = 1 k Ω Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Z th j-sp , versus pulse width t p Fig.12. Typical, critical rate of rise of off-state voltage, dV D /dt versus junction temperature T j -50 0 50 100 1500 0.5 1.5 2.5 BT169 Tj / C IGT(Tj) IGT(25 C) 0 0.5 1 1.5 2 2.50 BT169W VT / V IT / A Vo = 1.0 V Rs = 0.27 Ohms typ max Tj = 125 C Tj = 25 C -50 0 50 100 1500 0.5 1.5 2.5 BT169 Tj / C IL(Tj) IL(25 C) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp / s 0.01 0.1 Zth j-sp (K/W)100 tp P t D BT169W -50 0 50 100 1500 0.5 1.5 2.5 BT169 Tj / C IH(Tj) IH(25 C) 0 50 100 1501 100 1000 Tj / C dVD/dt (V/us) RGK = 1 kohms