BT168W PHILIPS | Alldatasheet
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Philips Semiconductors Product specification Thyristors BT168W series logic level for RCD/ GFI/ LCCB applications GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope suitable for surface mounting, BT168 BW DW EW GW intended for use in Residual Current VDRM , Repetitive peak 200 400 500 600 V Devices/ Ground Fault Interrupters/ VRRM off-state voltages Leakage Current Circuit Breakers IT(AV) Average on-state 0.6 0.6 0.6 0.6 A (RCD/ GFI/ LCCB) applications current where a minimum I GT limit is needed. IT(RMS) RMS on-state current 1111 A These devices may be interfaced I TSM Non-repetitive peak 8888 A directly to microcontrollers, logic on-state current integrated circuits and other low power gate trigger circuits. PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BDEG VDRM , VRRM Repetitive peak off-state - 200 1 4001 5001 6001 V voltages IT(AV) Average on-state current half sine wave; - 0.63 A Tsp ≤ 112 ˚C IT(RMS) RMS on-state current all conduction angles - 1 A ITSM Non-repetitive peak t = 10 ms - 8 A on-state current t = 8.3 ms - 9 A half sine wave; Tj = 25 ˚C prior to surge I2tI 2t for fusing t = 10 ms - 0.32 A 2s dIT/dt Repetitive rate of rise of ITM = 2 A; IG = 10 mA; - 50 A/ µs on-state current after dIG /dt = 100 mA/µs triggering IGM Peak gate current - 1 A VGM Peak gate voltage - 5 V VRGM Peak reverse gate voltage - 5 V PGM Peak gate power - 2 W PG(AV) Average gate power over any 20 ms period - 0.1 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature ak g 1 23 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.100
Philips Semiconductors Product specification Thyristors BT168W series logic level for RCD/ GFI/ LCCB Applications THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-sp Thermal resistance - - 15 K/W junction to solder point R th j-a Thermal resistance pcb mounted, minimum footprint - 156 - K/W junction to ambient pcb mounted, pad area as in fig:14 - 70 - K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 10 mA; gate open circuit 20 50 200 µA IL Latching current V D = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -26 m A IH Holding current V D = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -25 m A VT On-state voltage I T = 2 A - 1.35 1.5 V VGT Gate trigger voltage V D = 12 V; IT = 10 mA; gate open circuit - 0.5 0.8 V VD = VDRM(max) ; IT = 10 mA; Tj = 125 ˚C; 0.2 0.3 - V gate open circuit ID , IR Off-state leakage current VD = VDRM(max) ; VR = VRRM(max) ; Tj = 125 ˚C; - 0.05 0.1 mA R GK = 1 kΩ DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D /dt Critical rate of rise of VDM = 67% VDRM(max) ; Tj = 125 ˚C; - 25 - V/ µs off-state voltage exponential waveform; R GK = 1 kΩ tgt Gate controlled turn-on ITM = 2 A; VD = VDRM(max) ; IG = 10 mA; - 2 - µs time dI G /dt = 0.1 A/µs tq Circuit commutated V D = 67% VDRM(max) ; Tj = 125 ˚C; - 100 - µs turn-off time I TM = 1.6 A; VR = 35 V; dITM /dt = 30 A/µs; dVD /dt = 2 V/µs; RGK = 1 kΩ September 1997 2 Rev 1.100
Philips Semiconductors Product specification Thyristors BT168W series logic level for RCD/ GFI/ LCCB Applications Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS) / IT(AV). Fig.2. Maximum permissible non-repetitive peak on-state current ITSM , versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. Fig.3. Maximum permissible rms current IT(RMS) , versus solder point temperature Tsp. Fig.4. Maximum permissible non-repetitive peak on-state current ITSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; Tsp ≤ 112˚C. Fig.6. Normalised gate trigger voltage VGT (Tj)/ VGT (25˚C), versus junction temperature Tj. 0.2 0.4 0.6 0.8 a = 1.57 1.9 2.2 2.8 BT169W IF(AV) / A Ptot / W 125 122 119 116 113 110Tsp(max) / C conduction angle form factor degrees 120 180 2.8 2.2 1.9 1.57 a 1 10 100 10000 BT169 Number of half cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T 100
1000 BT169
I Tj initial = 25 C max T 0.01 0.1 1 100 0.5 1.5
2 BT134W
IT(RMS) / A -50 0 50 100 1500 0.2 0.4 0.6 0.8 1.2 BT134W Tsp / C IT(RMS) / A 112 C -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 BT151 Tj / C VGT(Tj) VGT(25 C) September 1997 3 Rev 1.100
Philips Semiconductors Product specification Thyristors BT168W series logic level for RCD/ GFI/ LCCB Applications Fig.7. Normalised gate trigger current IGT (Tj)/ IGT (25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj, RGK = 1 kΩ . Fig.9. Normalised holding current IH (Tj)/ IH (25˚C), versus junction temperature Tj, R GK = 1 kΩ . Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-sp, versus pulse width tp. Fig.12. Typical, critical rate of rise of off-state voltage, dVD /dt versus junction temperature Tj. -50 0 50 100 1500 0.5 1.5 2.5
3 BT169
IGT(Tj) IGT(25 C) 0 0.5 1 1.5 2 2.50
5 BT169W
Vo = 1.0 V Rs = 0.27 Ohms typ max Tj = 125 C Tj = 25 C -50 0 50 100 1500 0.5 1.5 2.5 IL(Tj) IL(25 C) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp / s 0.01 0.1 Zth j-sp (K/W)100 tpP t D BT169W -50 0 50 100 1500 0.5 1.5 2.5 IH(Tj) IH(25 C) 0 50 100 1501 100 1000 Tj / C dVD/dt (V/us) RGK = 1 kohms September 1997 4 Rev 1.100
Philips Semiconductors Product specification Thyristors BT168W series logic level for RCD/ GFI/ LCCB Applications MOUNTING INSTRUCTIONS Dimensions in mm. Fig.13. soldering pattern for surface mounting SOT223. PRINTED CIRCUIT BOARD Dimensions in mm. Fig.14. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). 3.8 min 6.32.3 4.6 1.5 min 1.5 min 1.5 min (3x) 4.6 4.5 September 1997 5 Rev 1.100
Philips Semiconductors Product specification Thyristors BT168W series logic level for RCD/ GFI/ LCCB Applications MECHANICAL DATA Dimensions in mm Net Mass: 0.11 g Fig.15. SOT223 surface mounting package. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". 6.7 6.3 3.1 2.9 1 23 2.31.05 0.85 0.80 0.60 4.6 3.7 3.3 7.3 6.7 B A 0.10 0.02 1316 max 1.8 max max 0.32 0.24 (4x) BM0.1 AM0.2 September 1997 6 Rev 1.100
Philips Semiconductors Product specification Thyristors BT168W series logic level for RCD/ GFI/ LCCB Applications DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.100