BT152_19 ISC | Alldatasheet
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors BT152
APPLICATIONS
- Itissuitable tofitallmodes ofcontrol foundin applications suchas overvoltagecrowbar protection,motorcontrolcircuits inpower toolsandkitchen aids,in-rushcurrentlimiting circuits, .capacitivedischarge ignition,voltage regulation circuitsetc.
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peakoff-state voltage 400 V600 800 VRRM Repetitive peakreverse voltage 400 V600 800 IT(AV) Average on-stage current 13 A IT(RMS) RMS on-statecurrent 20 A ITSM Surge non-repetitiveon-state current@TP=10ms 200 A PG(AV) Average gatepower dissipation ,overany 20ms period 0.5 W Tj Operating junctiontemperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unlessotherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peakreverse current VRM=VRRM,RGK=220Ω, Tj=25℃ 5 μA Tj=125℃ 2 mA IDRM Repetitive peakoff-state current VDM=VDRM,,RGK=220Ω Tj=25℃ 5 μA Tj=125℃ 2 mA VTM On-state voltage ITM=40A 1.75 V IGT Gate-triggercurrent VD =12 V;IT =0.1A 32 mA VGT Gate-triggervoltage VD =12 V;IT =0.1A 1.5 V Rth(j-c) Thermalresistance Junctionto case 1.3 ℃/W