BT152 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc Thyristors B T 1 5 2
APPLICATIONS
- It is suitable to fit all modes of control found in applications such as overvoltage crowbar pr otection,motor control circuits in power tools and kitchen aids,in -rush current limiting circuits, . capacitive discharge ignition, voltage regulation circuits etc. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(AV) Average on-stage current T C=105℃ 8 A IT(RMS) R M S o n - s t a t e c u r r e n t T C=105℃ 12 A ITSM Surge non-repetitive on-state current T P=10ms 110 A PG(AV) Average gate power dissipation T j=125℃ 1 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM,RGK= 220Ω, Tj=25℃ 5 μA Tj=125℃ 2 mA IDRM Repetitive peak off-state current VDM=VDRM, ,RGK= 220Ω Tj=25℃ 5 μA Tj=25℃ 2 mA VTM On-state voltage I TM= 24A 1.6 V IGT Gate-trigger current V D= 12V; RL=33Ω 2 15 mA VGT Gate-trigger voltage V D= 12V; RL=33Ω 1.3 V IH Holding current I T= 0.5A; Gate Open 30 mA Rth(j-c) Thermal resistance Junction to case 1.3 ℃/W