BT152-400R LUGUANG | Alldatasheet

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  • High bidirectional blocking voltage capability * High thermal cycling performance BT152F-400R ITO-220 50pcs / Tube 50pcs / Tube BT152F-650R BT152F-800R ITO-220 ITO-220 50pcs / Tube http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1

ABSOLUTE MAXIMUM RATING (TJ = 25°C, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off-State Voltages BT152(F)-400R VDRM, VRRM 450 V BT152(F)-650R 650 BT152(F)-800R 800 Average On-State Current (half sine wave; Tmb ≤103°C) IT(AV) 13 A RMS on-State Current (all conduction angles) IT(RMS) 20 A Non-Repetitive Peak On-State Current (half sine wave; TJ = 25 °C prior to surge) t = 10 ms ITSM 200 A t = 8.3 ms 220 I2t for Fusing (t = 10 ms) I2t 200 A2s Repetitive Rate of Rise of On-State Current After Triggering (ITM = 50 A; IG = 0.2 mA; dIG /dt = 0.2 mA/μs) dIT /dt 200 A/μs Peak Gate Current IGM 5 A Peak Gate Voltage VGM 5 V Peak Reverse Gate Voltage VRGM 5 V Peak Gate Power PGM 20 W Average Gate Power (Over any 20 ms period) PG(AV) 0.5 W Operating Junction Temperature TJ 125 °C Storage Temperature TSTG -40 ~150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA STATIC CHARACTERISTICS (TJ = 25°C, unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Gate Trigger Current IGT V D = 12 V, IT = 0.1 A 4 5 mA Latching Current IL V D = 12 V, IGT = 0.1 A 13 80 mA Holding Current IH V D = 12 V, IGT = 0.1 A 12 60 mA On-State Voltage 1.4 1.75 V Gate Trigger Voltage VGT VD = 12 V, IT = 0.1 A VD = VDRM(max) , IT = 0.1 A, TJ = 125 °C 0.25 0.7 0.4 1.5 V Off-State Leakage Current I D , IR V D = VDRM(max) , VR = VRRM(max) ,TJ = 125°C 0.2 1.0 mA DYNAMIC CHARACTERISTICS (TJ = 25°C, unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN MAX UNIT Critical Rate of Rise of Off-State Voltage dVD /dt VDM = 67% VDRM(max), TJ = 125 °C, exponential waveform;Gate open circuit 300 V/μs200 Gate Controlled Turn-on Time tGT ITM = 40 A, VD = VDRM(max), IG = 0.1 A, dIG /dt = 5 A/μs 2 μs Circuit Commutated Turn-off tIme tQ ITM = 50 A, VR = 25 V, dITM /dt = 30 A/μs, dVD /dt = 50 V/μs, RGK = 100 Ω 70 μs PARAMETER MIN SYMBOL TYP MAX UNIT Junction to Ambient In Free Air θJA 60 K/W Thermal Resistance Junction to Mounting Base θJMB 1.1 K/W VT T=I 40A http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P2

ITO-220 Mechanical Drawing http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P3